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5961-01-085-4002
20 Products
1N5811
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010854002
NSN
5961-01-085-4002
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5811
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
DSA10000FGD
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010853421
NSN
5961-01-085-3421
DSA10000FGD
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010853421
NSN
5961-01-085-3421
MFG
SOLID STATE DEVICES INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: RADAR THREAT EMITER AN/MST-T1
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 3.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 2.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
RA2500
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010853421
NSN
5961-01-085-3421
MFG
VOLTAGE MULTIPLIERS INC. DBA V M I
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: RADAR THREAT EMITER AN/MST-T1
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 3.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 2.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
SA8320
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010853421
NSN
5961-01-085-3421
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: RADAR THREAT EMITER AN/MST-T1
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 3.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 2.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10000.0 MAXIMUM REVERSE VOLTAGE, PEAK
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SCF10000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010853421
NSN
5961-01-085-3421
MFG
SEMTECH CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: RADAR THREAT EMITER AN/MST-T1
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 3.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 2.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10000.0 MAXIMUM REVERSE VOLTAGE, PEAK
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MB11A02V20
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010853422
NSN
5961-01-085-3422
MB11A02V20
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010853422
NSN
5961-01-085-3422
MFG
CROUSE-HINDS LIGHTING DIV OF COOPER INDUSTRIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.75 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.600 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.875 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
10P5478
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010853423
NSN
5961-01-085-3423
10P5478
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010853423
NSN
5961-01-085-3423
MFG
D-A LUBRICANT CO INC NEWARK ELECTRONICS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT AND 30.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 2.00 AMPERES MAXIMUM PEAK POSITIVE GATE CURRENT AND -2.00 AMPERES MAXIMUM PEAK NEGATIVE GATE CURRENT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.551 INCHES MINIMUM AND 0.559 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6302 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 20.0 MAXIMUM PEAK POSITIVE GATE
Related Searches:
2N6162
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010853423
NSN
5961-01-085-3423
2N6162
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010853423
NSN
5961-01-085-3423
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT AND 30.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 2.00 AMPERES MAXIMUM PEAK POSITIVE GATE CURRENT AND -2.00 AMPERES MAXIMUM PEAK NEGATIVE GATE CURRENT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.551 INCHES MINIMUM AND 0.559 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6302 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 20.0 MAXIMUM PEAK POSITIVE GATE
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581R932H01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010853459
NSN
5961-01-085-3459
581R932H01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010853459
NSN
5961-01-085-3459
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
Related Searches:
655-471
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010853459
NSN
5961-01-085-3459
655-471
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010853459
NSN
5961-01-085-3459
MFG
MICRO USPD INC
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
Related Searches:
SA5258
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010853459
NSN
5961-01-085-3459
SA5258
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010853459
NSN
5961-01-085-3459
MFG
SEMTECH CORPORATION
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
Related Searches:
SDA932
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010853459
NSN
5961-01-085-3459
SDA932
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010853459
NSN
5961-01-085-3459
MFG
SOLID STATE DEVICES INC.
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
Related Searches:
147336A
TRANSISTOR
NSN, MFG P/N
5961010853808
NSN
5961-01-085-3808
MFG
XEROX CORP XEROX DOCUMENTATION AND SOFTWARE SERVICES
Description
TRANSISTOR
Related Searches:
206013
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010853809
NSN
5961-01-085-3809
MFG
CONRAC SYSTEMS INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2N6315
TRANSISTOR
NSN, MFG P/N
5961010854001
NSN
5961-01-085-4001
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 250.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.700 INCHES NOMINAL
OVERALL LENGTH: 1.103 INCHES MINIMUM AND 1.107 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 90.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE
Related Searches:
4012597-21
TRANSISTOR
NSN, MFG P/N
5961010854001
NSN
5961-01-085-4001
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 250.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.700 INCHES NOMINAL
OVERALL LENGTH: 1.103 INCHES MINIMUM AND 1.107 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 90.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE
Related Searches:
20-01009-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010854002
NSN
5961-01-085-4002
20-01009-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010854002
NSN
5961-01-085-4002
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5811
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
352250025129
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010854002
NSN
5961-01-085-4002
352250025129
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010854002
NSN
5961-01-085-4002
MFG
THALES NEDERLAND
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5811
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
40-666-2448U
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010854002
NSN
5961-01-085-4002
40-666-2448U
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010854002
NSN
5961-01-085-4002
MFG
MEGGITT UK LTD T/A VIBRO-METER UK
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5811
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
99107336
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010854002
NSN
5961-01-085-4002
MFG
THALES
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5811
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
