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5961-01-172-4180
20 Products
IRF121
TRANSISTOR
NSN, MFG P/N
5961011724180
NSN
5961-01-172-4180
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.635 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 0.916 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNTHREADED HOLE AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
1N971B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011720917
NSN
5961-01-172-0917
MFG
ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP
Description
CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
DZ790116B (1N971B)
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011720917
NSN
5961-01-172-0917
DZ790116B (1N971B)
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011720917
NSN
5961-01-172-0917
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
SZ50622KRL
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011720917
NSN
5961-01-172-0917
SZ50622KRL
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011720917
NSN
5961-01-172-0917
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
TD3810972
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011720917
NSN
5961-01-172-0917
MFG
MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
152-0456-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011720918
NSN
5961-01-172-0918
152-0456-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011720918
NSN
5961-01-172-0918
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
1N827
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011720918
NSN
5961-01-172-0918
MFG
COMPENSATED DEVICES INC
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
SZG25002K1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011720918
NSN
5961-01-172-0918
SZG25002K1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011720918
NSN
5961-01-172-0918
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
917AS700-21
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011721020
NSN
5961-01-172-1020
917AS700-21
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011721020
NSN
5961-01-172-1020
MFG
NAVAL AIR SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 1.40 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT AND 4.20 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N984B-1
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 91.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
JAN1N984B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011721020
NSN
5961-01-172-1020
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.40 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT AND 4.20 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N984B-1
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 91.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
258S006-3
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011722293
NSN
5961-01-172-2293
258S006-3
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011722293
NSN
5961-01-172-2293
MFG
EMS DEVELOPMENT CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MX PEACEKEEPER MISSLE SUPPORT EQUIPMENT. DEGAUSSING EQUIPMENT. SUPPLY CLASS AOE, WHIDBEY ISLAND CLASS LSD. C-130 HERCULES AIRCRAFT.
MAJOR COMPONENTS: THYRISTOR 2
OVERALL HEIGHT: 55.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 115.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 50.0 MILLIMETERS NOMINAL
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
Related Searches:
ED431216
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011722293
NSN
5961-01-172-2293
ED431216
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011722293
NSN
5961-01-172-2293
MFG
POWEREX INC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MX PEACEKEEPER MISSLE SUPPORT EQUIPMENT. DEGAUSSING EQUIPMENT. SUPPLY CLASS AOE, WHIDBEY ISLAND CLASS LSD. C-130 HERCULES AIRCRAFT.
MAJOR COMPONENTS: THYRISTOR 2
OVERALL HEIGHT: 55.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 115.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 50.0 MILLIMETERS NOMINAL
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
Related Searches:
SKKT161/12D
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011722293
NSN
5961-01-172-2293
SKKT161/12D
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011722293
NSN
5961-01-172-2293
MFG
SEMIKRON INTL INC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MX PEACEKEEPER MISSLE SUPPORT EQUIPMENT. DEGAUSSING EQUIPMENT. SUPPLY CLASS AOE, WHIDBEY ISLAND CLASS LSD. C-130 HERCULES AIRCRAFT.
MAJOR COMPONENTS: THYRISTOR 2
OVERALL HEIGHT: 55.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 115.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 50.0 MILLIMETERS NOMINAL
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
Related Searches:
W4DC55PB2N6646
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011722293
NSN
5961-01-172-2293
W4DC55PB2N6646
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011722293
NSN
5961-01-172-2293
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MX PEACEKEEPER MISSLE SUPPORT EQUIPMENT. DEGAUSSING EQUIPMENT. SUPPLY CLASS AOE, WHIDBEY ISLAND CLASS LSD. C-130 HERCULES AIRCRAFT.
MAJOR COMPONENTS: THYRISTOR 2
OVERALL HEIGHT: 55.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 115.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 50.0 MILLIMETERS NOMINAL
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
Related Searches:
0122-0152
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011722337
NSN
5961-01-172-2337
MFG
HEWLETT PACKARD CO
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.115 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM REVERSE VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
0122-0162
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011722337
NSN
5961-01-172-2337
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.115 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM REVERSE VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
BB809
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011722337
NSN
5961-01-172-2337
MFG
PHILIPS CIRCUIT ASSEMBLIES
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.115 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM REVERSE VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
DG809
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011722337
NSN
5961-01-172-2337
MFG
WAYNE KERR ELECTRONICS INC
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.115 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM REVERSE VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
SMV1603
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011722337
NSN
5961-01-172-2337
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.115 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM REVERSE VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
519579-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011723674
NSN
5961-01-172-3674
519579-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011723674
NSN
5961-01-172-3674
MFG
NAVAL AIR WARFARE CENTER AIRCRAFT DIVISION CODE 4.8.8.0.0.B BLDG 148-2
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: FLIGHT DECK STATUS AND SIGNALING SYSTEM
MAJOR COMPONENTS: DIODE 33
SPECIAL FEATURES: ESSENTIAL TO WEAPON SYSTEM PERFORMANCE OR OPERATION, OR THE PRESERVATION OF LIFE OR SAFETY OF OPERATING PERSONNEL
