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5961-01-149-6914
20 Products
103-439-003
TRANSISTOR
NSN, MFG P/N
5961011496914
NSN
5961-01-149-6914
MFG
L-3 COMMUNICATIONS CORPORATION DBA GLOBAL NETWORK SOLUTIONS DIV AYDIN COMMUNICATIONS DIVISION
Description
TRANSISTOR
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ITE4393
TRANSISTOR
NSN, MFG P/N
5961011496914
NSN
5961-01-149-6914
MFG
INTERSIL INC SUB OF GENERAL ELECTRIC CO
Description
TRANSISTOR
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5034 77325
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011496916
NSN
5961-01-149-6916
5034 77325
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011496916
NSN
5961-01-149-6916
MFG
MACK TRUCKS INC. DBA MACUNGIE OPERATIONS DIV GOVERNMENT SALES DIVISION
Description
MAJOR COMPONENTS: DIODE 3; LEAD ASSEMBLY 1
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K-500-CH-0516
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011496916
NSN
5961-01-149-6916
K-500-CH-0516
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011496916
NSN
5961-01-149-6916
MFG
KOVATCH CORP.
Description
MAJOR COMPONENTS: DIODE 3; LEAD ASSEMBLY 1
Related Searches:
85946500-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011496917
NSN
5961-01-149-6917
85946500-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011496917
NSN
5961-01-149-6917
MFG
GENERAL DYNAMICS INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 50.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 27963-85946500 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
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SA7572
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011496917
NSN
5961-01-149-6917
MFG
SEMTECH CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 50.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 27963-85946500 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011496917
NSN
5961-01-149-6917
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 50.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 27963-85946500 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
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2N6191
TRANSISTOR
NSN, MFG P/N
5961011497034
NSN
5961-01-149-7034
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: TELETYPEWRITER SET AN/UGC-129(V)
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 80.0 MAXIMUM COLLE
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67468-0001
TRANSISTOR
NSN, MFG P/N
5961011497034
NSN
5961-01-149-7034
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: TELETYPEWRITER SET AN/UGC-129(V)
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 80.0 MAXIMUM COLLE
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5961011497046
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5961-01-149-7046
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NSN, MFG P/N
5961011497046
NSN
5961-01-149-7046
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES NOMINAL
OVERALL LENGTH: 0.185 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
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NSN
5961-01-149-7046
SM-D-707053
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011497046
NSN
5961-01-149-7046
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES NOMINAL
OVERALL LENGTH: 0.185 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
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57-3362-3
SEMICONDUCTOR DEVICE ASSEMBLY
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5961011497092
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5961-01-149-7092
57-3362-3
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011497092
NSN
5961-01-149-7092
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
MAJOR COMPONENTS: DIODE 2; RESISTOR 3
OVERALL LENGTH: 0.560 INCHES NOMINAL
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AED003699-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011497752
NSN
5961-01-149-7752
AED003699-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011497752
NSN
5961-01-149-7752
MFG
GOODRICH CONTROL SYSTEMS LTD
Description
III END ITEM IDENTIFICATION: CH-47, ROTARY WING AIRCRAFT
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152-0279-00
SEMICONDUCTOR DEVICE,DIODE
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152-0279-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011498383
NSN
5961-01-149-8383
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011498383
NSN
5961-01-149-8383
DZ720714D(1N751A)
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011498383
NSN
5961-01-149-8383
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SZG35010RL(1N751A)
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011498383
NSN
5961-01-149-8383
SZG35010RL(1N751A)
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011498383
NSN
5961-01-149-8383
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
TD3810989
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011498383
NSN
5961-01-149-8383
MFG
MICROSEMI CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
139-327-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011499327
NSN
5961-01-149-9327
139-327-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011499327
NSN
5961-01-149-9327
MFG
L-3 COMMUNICATIONS CORPORATION DBA GLOBAL NETWORK SOLUTIONS DIV AYDIN COMMUNICATIONS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
DAC9-8DIR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011499327
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5961-01-149-9327
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MURATA POWER SOLUTIONS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
JANTXV1N4150
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011499417
NSN
5961-01-149-9417
JANTXV1N4150
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011499417
NSN
5961-01-149-9417
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4150
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/231
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/231 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPE
