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5961-00-849-5876
20 Products
2N683
TRANSISTOR
NSN, MFG P/N
5961008495876
NSN
5961-00-849-5876
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 2 TAB, SOLDER LUG
Related Searches:
352229016500
TRANSISTOR
NSN, MFG P/N
5961008495876
NSN
5961-00-849-5876
MFG
PHILIPS ELECTRONICS NEDERLAND BV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 2 TAB, SOLDER LUG
Related Searches:
1N21RF
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008496869
NSN
5961-00-849-6869
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N21RF TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 BINDING POST AND 1 PIN
Related Searches:
1-0035-19
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008496870
NSN
5961-00-849-6870
MFG
SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N2834B TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
1N2834B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008496870
NSN
5961-00-849-6870
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N2834B TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
1N2834BA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008496870
NSN
5961-00-849-6870
MFG
ADELCO ELEKTRONIK GMBH
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N2834B TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
112-10608
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008496875
NSN
5961-00-849-6875
MFG
POWER-ONE DC POWER SUPPLIES
Description
CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N974B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 MAXIM
Related Searches:
186163
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008496875
NSN
5961-00-849-6875
MFG
FLUKE CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N974B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 MAXIM
Related Searches:
1N974B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008496875
NSN
5961-00-849-6875
MFG
TELCOM SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N974B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 MAXIM
Related Searches:
232198
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008496875
NSN
5961-00-849-6875
MFG
RCA CORP DISTRIBUTOR AND SPECIAL PRODUCTS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N974B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 MAXIM
Related Searches:
352250009947
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008496875
NSN
5961-00-849-6875
352250009947
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008496875
NSN
5961-00-849-6875
MFG
THALES NEDERLAND
Description
CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N974B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 MAXIM
Related Searches:
352360A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008496875
NSN
5961-00-849-6875
MFG
QES LTD QUALITY ELECTRONIC SERVICES
Description
CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N974B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 MAXIM
Related Searches:
353-3096-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008496875
NSN
5961-00-849-6875
353-3096-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008496875
NSN
5961-00-849-6875
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N974B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 MAXIM
Related Searches:
353-3185-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008496875
NSN
5961-00-849-6875
353-3185-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008496875
NSN
5961-00-849-6875
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N974B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 MAXIM
Related Searches:
503458015
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008496875
NSN
5961-00-849-6875
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N974B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 MAXIM
Related Searches:
947060-9742
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008496875
NSN
5961-00-849-6875
947060-9742
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008496875
NSN
5961-00-849-6875
MFG
LITTON SYSTEMS INC. DIV NAVIGATION SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N974B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 MAXIM
Related Searches:
JAN1N974B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008496875
NSN
5961-00-849-6875
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N974B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 MAXIM
Related Searches:
JAN1N974BA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008496875
NSN
5961-00-849-6875
JAN1N974BA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008496875
NSN
5961-00-849-6875
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N974B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 MAXIM
Related Searches:
USN1N974B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008496875
NSN
5961-00-849-6875
MFG
COLLINS AND AIKMAN CORP
Description
CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N974B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 MAXIM
Related Searches:
426ADI0DE
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008497207
NSN
5961-00-849-7207
MFG
LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.415 INCHES MAXIMUM
OVERALL LENGTH: 0.635 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MAXIMUM BREAKDOWN VOLTAGE, DC
