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5961-01-103-4622
20 Products
A47601
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011034622
NSN
5961-01-103-4622
MFG
CNH AMERICA LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1-75
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011034623
NSN
5961-01-103-4623
MFG
MOTOROLA INC MOTOROLA AUTOMOTIVE ELECTRONICS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
A47607
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011034623
NSN
5961-01-103-4623
MFG
CNH AMERICA LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1854-0409
TRANSISTOR
NSN, MFG P/N
5961011034874
NSN
5961-01-103-4874
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: F-15 AIRCRAFT SUPPORT EQUIPMENT.
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 310.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2N5210
TRANSISTOR
NSN, MFG P/N
5961011034874
NSN
5961-01-103-4874
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: F-15 AIRCRAFT SUPPORT EQUIPMENT.
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 310.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
SPS-6853
TRANSISTOR
NSN, MFG P/N
5961011034874
NSN
5961-01-103-4874
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: F-15 AIRCRAFT SUPPORT EQUIPMENT.
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 310.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
618-4921-064
TRANSISTOR
NSN, MFG P/N
5961011034875
NSN
5961-01-103-4875
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER,
Related Searches:
55-0830-1
TRANSISTOR
NSN, MFG P/N
5961011034876
NSN
5961-01-103-4876
MFG
GRIMES AEROSPACE COMPANY DBA HONEYWELL
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.290 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 3.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
C-105DX93
TRANSISTOR
NSN, MFG P/N
5961011034876
NSN
5961-01-103-4876
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.290 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 3.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
55-0789-3
TRANSISTOR
NSN, MFG P/N
5961011034877
NSN
5961-01-103-4877
MFG
GRIMES AEROSPACE COMPANY DBA HONEYWELL
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 7.50 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 1.550 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
SES4902
TRANSISTOR
NSN, MFG P/N
5961011034877
NSN
5961-01-103-4877
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 7.50 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 1.550 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
SJ7356
TRANSISTOR
NSN, MFG P/N
5961011034877
NSN
5961-01-103-4877
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 7.50 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 1.550 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
151-0615-00
TRANSISTOR
NSN, MFG P/N
5961011034878
NSN
5961-01-103-4878
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 250.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-202
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.175 INCHES MAXIMUM
OVERALL LENGTH: 0.880 INCHES MAXIMUM
OVERALL WIDTH: 0.410 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE6588 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 300.0 MAXIMUM COLLECTOR TO BASE VOLTA
Related Searches:
2N6558
TRANSISTOR
NSN, MFG P/N
5961011034878
NSN
5961-01-103-4878
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 250.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-202
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.175 INCHES MAXIMUM
OVERALL LENGTH: 0.880 INCHES MAXIMUM
OVERALL WIDTH: 0.410 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE6588 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 300.0 MAXIMUM COLLECTOR TO BASE VOLTA
Related Searches:
87 011
TRANSISTOR
NSN, MFG P/N
5961011034878
NSN
5961-01-103-4878
MFG
DLA LAND AND MARITIME
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 250.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-202
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.175 INCHES MAXIMUM
OVERALL LENGTH: 0.880 INCHES MAXIMUM
OVERALL WIDTH: 0.410 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE6588 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 300.0 MAXIMUM COLLECTOR TO BASE VOLTA
Related Searches:
SDS358K
TRANSISTOR
NSN, MFG P/N
5961011034878
NSN
5961-01-103-4878
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 250.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-202
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.175 INCHES MAXIMUM
OVERALL LENGTH: 0.880 INCHES MAXIMUM
OVERALL WIDTH: 0.410 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE6588 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 300.0 MAXIMUM COLLECTOR TO BASE VOLTA
Related Searches:
JAN1N5650A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011034880
NSN
5961-01-103-4880
JAN1N5650A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011034880
NSN
5961-01-103-4880
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5650A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/500
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/500 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANT
Related Searches:
JAN1N4565A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011034881
NSN
5961-01-103-4881
JAN1N4565A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011034881
NSN
5961-01-103-4881
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4565A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/452
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/452 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-1
Related Searches:
E400
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011035062
NSN
5961-01-103-5062
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
OVERALL LENGTH: 0.240 INCHES NOMINAL
OVERALL WIDTH: 0.220 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
Related Searches:
4898-00-0001
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011035131
NSN
5961-01-103-5131
4898-00-0001
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011035131
NSN
5961-01-103-5131
MFG
WAVETEK U S INC DIV OF WAVETEK CORP
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 6 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: GLASS ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
