My Quote Request
No products added yet
5961-00-492-7780
20 Products
200872-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004927780
NSN
5961-00-492-7780
200872-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004927780
NSN
5961-00-492-7780
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS ALL TRANSISTOR
Related Searches:
153-0024-00
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961004922562
NSN
5961-00-492-2562
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
Related Searches:
70-1061
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004924095
NSN
5961-00-492-4095
70-1061
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004924095
NSN
5961-00-492-4095
MFG
DARCHEM ENGINEERING LTD
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: TRANSISTOR IS MOUNTED ON A HEAT SINK
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
Related Searches:
71-1056
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004924096
NSN
5961-00-492-4096
MFG
DARCHEM ENGINEERING LTD
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
70-1039
TRANSISTOR
NSN, MFG P/N
5961004924165
NSN
5961-00-492-4165
MFG
DARCHEM ENGINEERING LTD
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
1S5022
DIODE
NSN, MFG P/N
5961004924490
NSN
5961-00-492-4490
MFG
RAYTHEON SYSTEMS LTD WEAPONS SUPPORT GROUP
Description
DIODE
Related Searches:
K981SH1
DIODE
NSN, MFG P/N
5961004924490
NSN
5961-00-492-4490
MFG
RAYTHEON SYSTEMS LTD
Description
DIODE
Related Searches:
AK984
DIODE
NSN, MFG P/N
5961004924492
NSN
5961-00-492-4492
MFG
ATB LAURENCE SCOTT LTD
Description
DIODE
Related Searches:
Z2A33F
DIODE
NSN, MFG P/N
5961004924492
NSN
5961-00-492-4492
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
DIODE
Related Searches:
BYX13-1200R
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961004924493
NSN
5961-00-492-4493
BYX13-1200R
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961004924493
NSN
5961-00-492-4493
MFG
VISHAY
Description
III END ITEM IDENTIFICATION: REGULATOR V
Related Searches:
BYX13-1200
DIODE
NSN, MFG P/N
5961004924494
NSN
5961-00-492-4494
MFG
VISHAY
Description
DIODE
Related Searches:
NS662
TRANSISTOR
NSN, MFG P/N
5961004925491
NSN
5961-00-492-5491
MFG
NATIONAL SEMICONDUCTOR CORP
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
TD252A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004925493
NSN
5961-00-492-5493
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES MAXIMUM
OVERALL LENGTH: 0.060 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.5 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 RIBBON
Related Searches:
CR0360
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004925494
NSN
5961-00-492-5494
MFG
TRAK MICROWAVE CORP-WESTERN DIV
Description
CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES MAXIMUM
OVERALL LENGTH: 0.060 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 7.5 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 RIBBON
Related Searches:
TD254A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004925494
NSN
5961-00-492-5494
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES MAXIMUM
OVERALL LENGTH: 0.060 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 7.5 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 RIBBON
Related Searches:
TD264A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004925494
NSN
5961-00-492-5494
MFG
GPD OPTOELECTRONICS CORP.
Description
CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES MAXIMUM
OVERALL LENGTH: 0.060 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 7.5 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 RIBBON
Related Searches:
1N925
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004925495
NSN
5961-00-492-5495
MFG
FAIRCHILD SEMICONDUCTOR CORP COMPONENTS GROUP SUB OF SCHLUMBERGER LTD
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
353-1152-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004927626
NSN
5961-00-492-7626
353-1152-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004927626
NSN
5961-00-492-7626
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 210.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.437 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
TEST DATA DOCUMENT: 13499-353-1152 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
JAN1N2976B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004927626
NSN
5961-00-492-7626
JAN1N2976B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004927626
NSN
5961-00-492-7626
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 210.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.437 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
TEST DATA DOCUMENT: 13499-353-1152 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
JAN1N2976BA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004927626
NSN
5961-00-492-7626
JAN1N2976BA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004927626
NSN
5961-00-492-7626
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 210.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.437 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
TEST DATA DOCUMENT: 13499-353-1152 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
