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5961-01-078-9650

20 Products

H460

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961010789650

NSN

5961-01-078-9650

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H460

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961010789650

NSN

5961-01-078-9650

MFG

U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION

Description

CIRCUIT CONNECTION STYLE DESIGNATOR: 1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 1.953 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; VOLTAGE NOT RATED; TWO MOUNTING SLOTS 0.375 IN. LG AND 0.187 IN. WIDE
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG

5L.5532.205.08

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010788119

NSN

5961-01-078-8119

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5L.5532.205.08

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010788119

NSN

5961-01-078-8119

MFG

EADS DEUTSCHLAND GMBH -VERTEIDIGUNG UND ZIVILE SYSTEME-

Description

FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.9 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.3 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 25.4 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.4 MAXIMUM NOMINAL REGULATOR VOLTAGE

BZX55/C5V1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010788119

NSN

5961-01-078-8119

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BZX55/C5V1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010788119

NSN

5961-01-078-8119

MFG

SIEMENS CORP

Description

FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.9 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.3 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 25.4 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.4 MAXIMUM NOMINAL REGULATOR VOLTAGE

BZX55C5V1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010788119

NSN

5961-01-078-8119

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BZX55C5V1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010788119

NSN

5961-01-078-8119

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.9 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.3 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 25.4 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.4 MAXIMUM NOMINAL REGULATOR VOLTAGE

13-4545-1

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010788500

NSN

5961-01-078-8500

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13-4545-1

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010788500

NSN

5961-01-078-8500

MFG

MEGAPULSE INCORPORATED

Description

CURRENT RATING PER CHARACTERISTIC: 350.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE
DESIGN CONTROL REFERENCE: 13-4545-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 51053
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 2.250 INCHES NOMINAL
OVERALL LENGTH: 1.040 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD W/TERMINAL LUG AND 1 CASE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

T72H1635K4DC

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010788500

NSN

5961-01-078-8500

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T72H1635K4DC

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010788500

NSN

5961-01-078-8500

MFG

POWEREX INC

Description

CURRENT RATING PER CHARACTERISTIC: 350.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE
DESIGN CONTROL REFERENCE: 13-4545-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 51053
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 2.250 INCHES NOMINAL
OVERALL LENGTH: 1.040 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD W/TERMINAL LUG AND 1 CASE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

353-6550-580

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010788669

NSN

5961-01-078-8669

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353-6550-580

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010788669

NSN

5961-01-078-8669

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 865.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-353-6550 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.3 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -3.0 TO 3.0

DZ800304D

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010788669

NSN

5961-01-078-8669

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DZ800304D

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010788669

NSN

5961-01-078-8669

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

CURRENT RATING PER CHARACTERISTIC: 865.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-353-6550 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.3 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -3.0 TO 3.0

SZP40034

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010788669

NSN

5961-01-078-8669

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SZP40034

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010788669

NSN

5961-01-078-8669

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 865.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-353-6550 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.3 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -3.0 TO 3.0

1906-0032

DIODE ASSEMBLY

NSN, MFG P/N

5961010788781

NSN

5961-01-078-8781

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1906-0032

DIODE ASSEMBLY

NSN, MFG P/N

5961010788781

NSN

5961-01-078-8781

MFG

HEWLETT PACKARD CO

932139-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010789298

NSN

5961-01-078-9298

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932139-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010789298

NSN

5961-01-078-9298

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

200104211

TRANSISTOR

NSN, MFG P/N

5961010789494

NSN

5961-01-078-9494

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200104211

TRANSISTOR

NSN, MFG P/N

5961010789494

NSN

5961-01-078-9494

MFG

ZODIAC DATA SYSTEMS INC DBA ENERTEC AMERICA

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
DESIGN CONTROL REFERENCE: E421
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 17856
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

200241

TRANSISTOR

NSN, MFG P/N

5961010789494

NSN

5961-01-078-9494

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200241

TRANSISTOR

NSN, MFG P/N

5961010789494

NSN

5961-01-078-9494

MFG

EADS NORTH AMERICA INC. DBA EADS NORTH AMERICA TEST AND SERVICES DIV EADS NORTH AMERICA TEST AND SERVICES

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
DESIGN CONTROL REFERENCE: E421
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 17856
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

379271

TRANSISTOR

NSN, MFG P/N

5961010789494

NSN

5961-01-078-9494

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379271

TRANSISTOR

NSN, MFG P/N

5961010789494

NSN

5961-01-078-9494

MFG

FLUKE CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
DESIGN CONTROL REFERENCE: E421
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 17856
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

B420

TRANSISTOR

NSN, MFG P/N

5961010789494

NSN

5961-01-078-9494

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B420

TRANSISTOR

NSN, MFG P/N

5961010789494

NSN

5961-01-078-9494

MFG

SILICONIX INCORPORATED D IV SILICONIX

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
DESIGN CONTROL REFERENCE: E421
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 17856
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

1N3912

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010789499

NSN

5961-01-078-9499

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1N3912

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010789499

NSN

5961-01-078-9499

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON

339000-06

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010789500

NSN

5961-01-078-9500

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339000-06

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010789500

NSN

5961-01-078-9500

MFG

TRANSICO INC. DBA EECO SWITCH

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 16.2 MILLIMETERS NOMINAL
OVERALL LENGTH: 18.9 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: ZINC SULFIDE
TERMINAL CIRCLE DIAMETER: 0.250 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 68.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

V68ZA10

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010789500

NSN

5961-01-078-9500

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V68ZA10

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010789500

NSN

5961-01-078-9500

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 16.2 MILLIMETERS NOMINAL
OVERALL LENGTH: 18.9 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: ZINC SULFIDE
TERMINAL CIRCLE DIAMETER: 0.250 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 68.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

R9450A

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010789598

NSN

5961-01-078-9598

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R9450A

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010789598

NSN

5961-01-078-9598

MFG

EATON ELECTRICAL INC. DBA CUTTLER HMMER CMRCL CNTRLS DIV DIV VEHICLE CONTROLS BUSINESS UNIT

APT2X101D120J

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961010789650

NSN

5961-01-078-9650

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APT2X101D120J

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961010789650

NSN

5961-01-078-9650

MFG

RICHARDSON ELECTRONICS LTD.

Description

CIRCUIT CONNECTION STYLE DESIGNATOR: 1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 1.953 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; VOLTAGE NOT RATED; TWO MOUNTING SLOTS 0.375 IN. LG AND 0.187 IN. WIDE
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG