My Quote Request
No products added yet
5961-01-078-9650
20 Products
H460
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010789650
NSN
5961-01-078-9650
MFG
U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 1.953 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; VOLTAGE NOT RATED; TWO MOUNTING SLOTS 0.375 IN. LG AND 0.187 IN. WIDE
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
Related Searches:
5L.5532.205.08
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010788119
NSN
5961-01-078-8119
5L.5532.205.08
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010788119
NSN
5961-01-078-8119
MFG
EADS DEUTSCHLAND GMBH -VERTEIDIGUNG UND ZIVILE SYSTEME-
Description
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.9 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.3 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 25.4 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.4 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
BZX55/C5V1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010788119
NSN
5961-01-078-8119
BZX55/C5V1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010788119
NSN
5961-01-078-8119
MFG
SIEMENS CORP
Description
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.9 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.3 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 25.4 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.4 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
BZX55C5V1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010788119
NSN
5961-01-078-8119
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.9 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.3 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 25.4 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.4 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
13-4545-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010788500
NSN
5961-01-078-8500
13-4545-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010788500
NSN
5961-01-078-8500
MFG
MEGAPULSE INCORPORATED
Description
CURRENT RATING PER CHARACTERISTIC: 350.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE
DESIGN CONTROL REFERENCE: 13-4545-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 51053
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 2.250 INCHES NOMINAL
OVERALL LENGTH: 1.040 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD W/TERMINAL LUG AND 1 CASE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
T72H1635K4DC
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010788500
NSN
5961-01-078-8500
T72H1635K4DC
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010788500
NSN
5961-01-078-8500
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 350.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE
DESIGN CONTROL REFERENCE: 13-4545-1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 51053
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 2.250 INCHES NOMINAL
OVERALL LENGTH: 1.040 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD W/TERMINAL LUG AND 1 CASE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
353-6550-580
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010788669
NSN
5961-01-078-8669
353-6550-580
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010788669
NSN
5961-01-078-8669
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 865.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-353-6550 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.3 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -3.0 TO 3.0
Related Searches:
DZ800304D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010788669
NSN
5961-01-078-8669
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 865.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-353-6550 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.3 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -3.0 TO 3.0
Related Searches:
SZP40034
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010788669
NSN
5961-01-078-8669
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 865.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-353-6550 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.3 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -3.0 TO 3.0
Related Searches:
1906-0032
DIODE ASSEMBLY
NSN, MFG P/N
5961010788781
NSN
5961-01-078-8781
MFG
HEWLETT PACKARD CO
Description
DIODE ASSEMBLY
Related Searches:
932139-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010789298
NSN
5961-01-078-9298
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
200104211
TRANSISTOR
NSN, MFG P/N
5961010789494
NSN
5961-01-078-9494
MFG
ZODIAC DATA SYSTEMS INC DBA ENERTEC AMERICA
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
DESIGN CONTROL REFERENCE: E421
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 17856
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
200241
TRANSISTOR
NSN, MFG P/N
5961010789494
NSN
5961-01-078-9494
MFG
EADS NORTH AMERICA INC. DBA EADS NORTH AMERICA TEST AND SERVICES DIV EADS NORTH AMERICA TEST AND SERVICES
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
DESIGN CONTROL REFERENCE: E421
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 17856
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
379271
TRANSISTOR
NSN, MFG P/N
5961010789494
NSN
5961-01-078-9494
MFG
FLUKE CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
DESIGN CONTROL REFERENCE: E421
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 17856
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
B420
TRANSISTOR
NSN, MFG P/N
5961010789494
NSN
5961-01-078-9494
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
DESIGN CONTROL REFERENCE: E421
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 17856
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
1N3912
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010789499
NSN
5961-01-078-9499
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
339000-06
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010789500
NSN
5961-01-078-9500
MFG
TRANSICO INC. DBA EECO SWITCH
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 16.2 MILLIMETERS NOMINAL
OVERALL LENGTH: 18.9 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: ZINC SULFIDE
TERMINAL CIRCLE DIAMETER: 0.250 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 68.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
V68ZA10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010789500
NSN
5961-01-078-9500
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 16.2 MILLIMETERS NOMINAL
OVERALL LENGTH: 18.9 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: ZINC SULFIDE
TERMINAL CIRCLE DIAMETER: 0.250 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 68.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
R9450A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010789598
NSN
5961-01-078-9598
R9450A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010789598
NSN
5961-01-078-9598
MFG
EATON ELECTRICAL INC. DBA CUTTLER HMMER CMRCL CNTRLS DIV DIV VEHICLE CONTROLS BUSINESS UNIT
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
Related Searches:
APT2X101D120J
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010789650
NSN
5961-01-078-9650
APT2X101D120J
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010789650
NSN
5961-01-078-9650
MFG
RICHARDSON ELECTRONICS LTD.
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 1.953 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; VOLTAGE NOT RATED; TWO MOUNTING SLOTS 0.375 IN. LG AND 0.187 IN. WIDE
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
