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5961-01-072-4018
20 Products
JAN1N6157
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010724018
NSN
5961-01-072-4018
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM ON-STATE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N6157
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/516
OVERALL DIAMETER: 0.135 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.0 WATTS MAXIMUM FORWARD POWER DISSIPATION, MAXIMUM PEAK, TOTAL VALUE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/516 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.100 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERIST
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JAN1N3891
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010724019
NSN
5961-01-072-4019
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 15.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH RQMT OF DESC PRODUCTION STD NO.L02664; FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
L02664
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010724019
NSN
5961-01-072-4019
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 15.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH RQMT OF DESC PRODUCTION STD NO.L02664; FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N5296
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010724020
NSN
5961-01-072-4020
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM PEAK POINT CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5296-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/463
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/463 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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578R614H14
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010724020
NSN
5961-01-072-4020
578R614H14
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010724020
NSN
5961-01-072-4020
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM PEAK POINT CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5296-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/463
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/463 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
720646-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010724020
NSN
5961-01-072-4020
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM PEAK POINT CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5296-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/463
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/463 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
JAN1N5296
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010724020
NSN
5961-01-072-4020
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM PEAK POINT CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5296-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/463
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/463 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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SA3482
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010724059
NSN
5961-01-072-4059
SA3482
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010724059
NSN
5961-01-072-4059
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
OVERALL HEIGHT: 0.406 INCHES NOMINAL
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
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134685-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010724078
NSN
5961-01-072-4078
134685-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010724078
NSN
5961-01-072-4078
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
COMPONENT NAME AND QUANTITY: 7 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.870 INCHES MAXIMUM
OVERALL WIDTH: 0.280 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: COMMON EMITTER; TRANSISTOR JUNCTION PATTER ARRANGEMENTS: NPN
TERMINAL LENGTH: 0.145 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96214-803895 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 16.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC
Related Searches:
404068-112
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010724078
NSN
5961-01-072-4078
404068-112
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010724078
NSN
5961-01-072-4078
MFG
CARDION INC
Description
COMPONENT NAME AND QUANTITY: 7 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.870 INCHES MAXIMUM
OVERALL WIDTH: 0.280 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: COMMON EMITTER; TRANSISTOR JUNCTION PATTER ARRANGEMENTS: NPN
TERMINAL LENGTH: 0.145 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96214-803895 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 16.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC
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4950381
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010724078
NSN
5961-01-072-4078
4950381
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010724078
NSN
5961-01-072-4078
MFG
PALOMAR PRODUCTS INC.
Description
COMPONENT NAME AND QUANTITY: 7 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.870 INCHES MAXIMUM
OVERALL WIDTH: 0.280 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: COMMON EMITTER; TRANSISTOR JUNCTION PATTER ARRANGEMENTS: NPN
TERMINAL LENGTH: 0.145 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96214-803895 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 16.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC
Related Searches:
72-00994-107
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010724078
NSN
5961-01-072-4078
72-00994-107
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010724078
NSN
5961-01-072-4078
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
COMPONENT NAME AND QUANTITY: 7 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.870 INCHES MAXIMUM
OVERALL WIDTH: 0.280 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: COMMON EMITTER; TRANSISTOR JUNCTION PATTER ARRANGEMENTS: NPN
TERMINAL LENGTH: 0.145 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96214-803895 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 16.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC
Related Searches:
803895-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010724078
NSN
5961-01-072-4078
803895-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010724078
NSN
5961-01-072-4078
MFG
RAYTHEON COMPANY
Description
COMPONENT NAME AND QUANTITY: 7 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.870 INCHES MAXIMUM
OVERALL WIDTH: 0.280 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: COMMON EMITTER; TRANSISTOR JUNCTION PATTER ARRANGEMENTS: NPN
TERMINAL LENGTH: 0.145 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96214-803895 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 16.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC
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CA3081F-3
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010724078
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5961-01-072-4078
CA3081F-3
SEMICONDUCTOR DEVICES,UNITIZED
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5961010724078
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5961-01-072-4078
MFG
INTERSIL CORPORATION
Description
COMPONENT NAME AND QUANTITY: 7 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.870 INCHES MAXIMUM
OVERALL WIDTH: 0.280 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: COMMON EMITTER; TRANSISTOR JUNCTION PATTER ARRANGEMENTS: NPN
TERMINAL LENGTH: 0.145 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96214-803895 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 16.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC
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ES5385-02
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010724078
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5961-01-072-4078
ES5385-02
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010724078
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5961-01-072-4078
MFG
DRS SUSTAINMENT SYSTEMS INC. DIV DRS SUSTAINMENT SYSTEMS INC. USE CAGE CODE 98255 FOR CATALOGING.
Description
COMPONENT NAME AND QUANTITY: 7 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.870 INCHES MAXIMUM
OVERALL WIDTH: 0.280 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: COMMON EMITTER; TRANSISTOR JUNCTION PATTER ARRANGEMENTS: NPN
TERMINAL LENGTH: 0.145 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96214-803895 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 16.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC
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SC5962-0579-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010724078
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5961-01-072-4078
SC5962-0579-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010724078
NSN
5961-01-072-4078
MFG
DRS ICAS, LLC
Description
COMPONENT NAME AND QUANTITY: 7 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.870 INCHES MAXIMUM
OVERALL WIDTH: 0.280 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: COMMON EMITTER; TRANSISTOR JUNCTION PATTER ARRANGEMENTS: NPN
TERMINAL LENGTH: 0.145 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96214-803895 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 16.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC
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SG3081J/883B
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010724078
NSN
5961-01-072-4078
SG3081J/883B
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010724078
NSN
5961-01-072-4078
MFG
MICROSEMI CORP.-INTEGRATED PRODUCTS
Description
COMPONENT NAME AND QUANTITY: 7 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.870 INCHES MAXIMUM
OVERALL WIDTH: 0.280 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: COMMON EMITTER; TRANSISTOR JUNCTION PATTER ARRANGEMENTS: NPN
TERMINAL LENGTH: 0.145 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96214-803895 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 16.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC
Related Searches:
720621-22
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010724166
NSN
5961-01-072-4166
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 90.0 GRAMS
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.313 INCHES
OVERALL DIAMETER: 1.000 INCHES MAXIMUM
OVERALL LENGTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 CASE
TEST DATA DOCUMENT: 05869-720621 DRAWING
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 420.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
SA4935
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010724166
NSN
5961-01-072-4166
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 90.0 GRAMS
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.313 INCHES
OVERALL DIAMETER: 1.000 INCHES MAXIMUM
OVERALL LENGTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 CASE
TEST DATA DOCUMENT: 05869-720621 DRAWING
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 420.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
SDA282-22
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010724166
NSN
5961-01-072-4166
MFG
SOLID STATE DEVICES INC.
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 90.0 GRAMS
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.313 INCHES
OVERALL DIAMETER: 1.000 INCHES MAXIMUM
OVERALL LENGTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 CASE
TEST DATA DOCUMENT: 05869-720621 DRAWING
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 420.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
