Featured Products

My Quote Request

No products added yet

5961-01-014-8570

20 Products

SK3118

TRANSISTOR

NSN, MFG P/N

5961010148570

NSN

5961-01-014-8570

View More Info

SK3118

TRANSISTOR

NSN, MFG P/N

5961010148570

NSN

5961-01-014-8570

MFG

INTERSIL CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: SK3118
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 34371
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

DH3725CN

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010148103

NSN

5961-01-014-8103

View More Info

DH3725CN

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010148103

NSN

5961-01-014-8103

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
DESIGN CONTROL REFERENCE: 1821-0006
MANUFACTURERS CODE: 50434
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
THE MANUFACTURERS DATA:

SH 0963

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010148103

NSN

5961-01-014-8103

View More Info

SH 0963

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010148103

NSN

5961-01-014-8103

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
DESIGN CONTROL REFERENCE: 1821-0006
MANUFACTURERS CODE: 50434
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
THE MANUFACTURERS DATA:

SPQ1600

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010148103

NSN

5961-01-014-8103

View More Info

SPQ1600

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010148103

NSN

5961-01-014-8103

MFG

FREESCALE SEMICONDUCTOR INC.

Description

COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
DESIGN CONTROL REFERENCE: 1821-0006
MANUFACTURERS CODE: 50434
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
THE MANUFACTURERS DATA:

UHP 012

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010148103

NSN

5961-01-014-8103

View More Info

UHP 012

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010148103

NSN

5961-01-014-8103

MFG

SPRAGUE ELECTRIC CO WORLD HQS

Description

COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
DESIGN CONTROL REFERENCE: 1821-0006
MANUFACTURERS CODE: 50434
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
THE MANUFACTURERS DATA:

40-014211-01

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010148104

NSN

5961-01-014-8104

View More Info

40-014211-01

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010148104

NSN

5961-01-014-8104

MFG

INTERLINK COMMUNICATIONS INC

9000112-01

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010148104

NSN

5961-01-014-8104

View More Info

9000112-01

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010148104

NSN

5961-01-014-8104

MFG

RAYTHEON TECHNICAL SERVICES COMPANY

932021-1C

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010148104

NSN

5961-01-014-8104

View More Info

932021-1C

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010148104

NSN

5961-01-014-8104

MFG

RAYTHEON COMPANY

FSA2700M

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010148104

NSN

5961-01-014-8104

View More Info

FSA2700M

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010148104

NSN

5961-01-014-8104

MFG

FAIRCHILD SEMICONDUCTOR CORP

FSA2719M

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010148104

NSN

5961-01-014-8104

View More Info

FSA2719M

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010148104

NSN

5961-01-014-8104

MFG

AMERICAN SHIZUKI CORP

QDA2000

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010148104

NSN

5961-01-014-8104

View More Info

QDA2000

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010148104

NSN

5961-01-014-8104

MFG

QUALIDYNE CORP

1-913073-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010148150

NSN

5961-01-014-8150

View More Info

1-913073-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010148150

NSN

5961-01-014-8150

MFG

EATON CORP ELECTRONIC INSTRUMENTATION DIV LOS ANGELES PLANT

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.122 INCHES NOMINAL
OVERALL LENGTH: 0.235 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

JZ5B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010148150

NSN

5961-01-014-8150

View More Info

JZ5B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010148150

NSN

5961-01-014-8150

MFG

DIODES INC POWER COMPONENTS DIV

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.122 INCHES NOMINAL
OVERALL LENGTH: 0.235 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

247AS-C1235-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010148151

NSN

5961-01-014-8151

View More Info

247AS-C1235-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010148151

NSN

5961-01-014-8151

MFG

NAVAL AIR SYSTEMS COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 30003-247AS-C1235 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.5 MAXIMUM ON VOLTAGE, FORWARD VOLTAGE DROP, DC

5082-2438

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010148151

NSN

5961-01-014-8151

View More Info

5082-2438

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010148151

NSN

5961-01-014-8151

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 30003-247AS-C1235 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.5 MAXIMUM ON VOLTAGE, FORWARD VOLTAGE DROP, DC

HP5082-2438

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010148151

NSN

5961-01-014-8151

View More Info

HP5082-2438

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010148151

NSN

5961-01-014-8151

MFG

HEWLETT PACKARD CO

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 30003-247AS-C1235 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.5 MAXIMUM ON VOLTAGE, FORWARD VOLTAGE DROP, DC

247ASC1235-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010148152

NSN

5961-01-014-8152

View More Info

247ASC1235-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010148152

NSN

5961-01-014-8152

MFG

NAVAL AIR SYSTEMS COMMAND

Description

DESIGN CONTROL REFERENCE: 5082-2437
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 50434
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

5082-2437

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010148152

NSN

5961-01-014-8152

View More Info

5082-2437

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010148152

NSN

5961-01-014-8152

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

DESIGN CONTROL REFERENCE: 5082-2437
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 50434
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

HP5082-2437

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010148152

NSN

5961-01-014-8152

View More Info

HP5082-2437

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010148152

NSN

5961-01-014-8152

MFG

HEWLETT PACKARD CO

Description

DESIGN CONTROL REFERENCE: 5082-2437
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 50434
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

1SV45

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010148153

NSN

5961-01-014-8153

View More Info

1SV45

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010148153

NSN

5961-01-014-8153

MFG

NEC AMERICA INC

Description

INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 5.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 20.0 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.5 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 1 PIN AND 1 UNTHREADED HOLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE VOLTAGE, PEAK