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5961-01-014-8570
20 Products
SK3118
TRANSISTOR
NSN, MFG P/N
5961010148570
NSN
5961-01-014-8570
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: SK3118
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 34371
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
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DH3725CN
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NSN, MFG P/N
5961010148103
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5961-01-014-8103
DH3725CN
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010148103
NSN
5961-01-014-8103
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
DESIGN CONTROL REFERENCE: 1821-0006
MANUFACTURERS CODE: 50434
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
THE MANUFACTURERS DATA:
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SH 0963
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NSN, MFG P/N
5961010148103
NSN
5961-01-014-8103
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NSN, MFG P/N
5961010148103
NSN
5961-01-014-8103
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
DESIGN CONTROL REFERENCE: 1821-0006
MANUFACTURERS CODE: 50434
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
THE MANUFACTURERS DATA:
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5961010148103
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5961-01-014-8103
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NSN, MFG P/N
5961010148103
NSN
5961-01-014-8103
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
DESIGN CONTROL REFERENCE: 1821-0006
MANUFACTURERS CODE: 50434
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
THE MANUFACTURERS DATA:
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5961-01-014-8103
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5961010148103
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5961-01-014-8103
MFG
SPRAGUE ELECTRIC CO WORLD HQS
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
DESIGN CONTROL REFERENCE: 1821-0006
MANUFACTURERS CODE: 50434
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
THE MANUFACTURERS DATA:
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40-014211-01
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5961-01-014-8104
40-014211-01
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NSN, MFG P/N
5961010148104
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5961-01-014-8104
MFG
INTERLINK COMMUNICATIONS INC
Description
SEMICONDUCTOR DEVICES,UNITIZED
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5961010148104
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5961-01-014-8104
9000112-01
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NSN, MFG P/N
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MFG
RAYTHEON TECHNICAL SERVICES COMPANY
Description
SEMICONDUCTOR DEVICES,UNITIZED
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RAYTHEON COMPANY
Description
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5961010148104
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5961-01-014-8104
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NSN, MFG P/N
5961010148104
NSN
5961-01-014-8104
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
SEMICONDUCTOR DEVICES,UNITIZED
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5961-01-014-8104
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NSN, MFG P/N
5961010148104
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5961-01-014-8104
MFG
AMERICAN SHIZUKI CORP
Description
SEMICONDUCTOR DEVICES,UNITIZED
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5961010148104
NSN
5961-01-014-8104
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NSN, MFG P/N
5961010148104
NSN
5961-01-014-8104
MFG
QUALIDYNE CORP
Description
SEMICONDUCTOR DEVICES,UNITIZED
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1-913073-001
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1-913073-001
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NSN, MFG P/N
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MFG
EATON CORP ELECTRONIC INSTRUMENTATION DIV LOS ANGELES PLANT
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.122 INCHES NOMINAL
OVERALL LENGTH: 0.235 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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MFG
DIODES INC POWER COMPONENTS DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.122 INCHES NOMINAL
OVERALL LENGTH: 0.235 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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247AS-C1235-001
SEMICONDUCTOR DEVICE,DIODE
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5961010148151
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247AS-C1235-001
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NSN, MFG P/N
5961010148151
NSN
5961-01-014-8151
MFG
NAVAL AIR SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 30003-247AS-C1235 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.5 MAXIMUM ON VOLTAGE, FORWARD VOLTAGE DROP, DC
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NSN, MFG P/N
5961010148151
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5961-01-014-8151
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 30003-247AS-C1235 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.5 MAXIMUM ON VOLTAGE, FORWARD VOLTAGE DROP, DC
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
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5961-01-014-8151
MFG
HEWLETT PACKARD CO
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 30003-247AS-C1235 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.5 MAXIMUM ON VOLTAGE, FORWARD VOLTAGE DROP, DC
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247ASC1235-002
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NSN, MFG P/N
5961010148152
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5961-01-014-8152
247ASC1235-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010148152
NSN
5961-01-014-8152
MFG
NAVAL AIR SYSTEMS COMMAND
Description
DESIGN CONTROL REFERENCE: 5082-2437
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 50434
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
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NSN, MFG P/N
5961010148152
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5961-01-014-8152
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AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
DESIGN CONTROL REFERENCE: 5082-2437
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 50434
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010148152
NSN
5961-01-014-8152
MFG
HEWLETT PACKARD CO
Description
DESIGN CONTROL REFERENCE: 5082-2437
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 50434
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
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1SV45
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010148153
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5961-01-014-8153
MFG
NEC AMERICA INC
Description
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 5.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 20.0 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.5 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 1 PIN AND 1 UNTHREADED HOLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE VOLTAGE, PEAK
