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5961-01-376-2083
20 Products
RA1018
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013762083
NSN
5961-01-376-2083
RA1018
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013762083
NSN
5961-01-376-2083
MFG
MICRO ASSEMBLY AND TEST INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 26.00 AMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.270 INCHES MAXIMUM
OVERALL LENGTH: 1.865 INCHES NOMINAL
OVERALL WIDTH: 0.995 INCHES MINIMUM AND 1.005 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 12 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 NOMINAL GATE TO SOURCE VOLTAGE ALL TRANSISTOR
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MOD500-2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013762083
NSN
5961-01-376-2083
MOD500-2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013762083
NSN
5961-01-376-2083
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 26.00 AMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.270 INCHES MAXIMUM
OVERALL LENGTH: 1.865 INCHES NOMINAL
OVERALL WIDTH: 0.995 INCHES MINIMUM AND 1.005 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 12 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 NOMINAL GATE TO SOURCE VOLTAGE ALL TRANSISTOR
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BF511
TRANSISTOR
NSN, MFG P/N
5961013762867
NSN
5961-01-376-2867
MFG
PHILIPS SEMICONDUCTORS INC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PROGRAM II SCOPE SHIELD.
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
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SS-32560
TRANSISTOR
NSN, MFG P/N
5961013762867
NSN
5961-01-376-2867
MFG
THALES COMMUNICATIONS INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PROGRAM II SCOPE SHIELD.
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
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1594623-1
TRANSISTOR
NSN, MFG P/N
5961013764010
NSN
5961-01-376-4010
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-TUCSON
Description
TRANSISTOR
Related Searches:
541517-801
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013764011
NSN
5961-01-376-4011
541517-801
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013764011
NSN
5961-01-376-4011
MFG
MARATHONNORCO AEROSPACE INC . DBA CHRISTIE ELECTRIC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
F1892DH600
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013764011
NSN
5961-01-376-4011
F1892DH600
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013764011
NSN
5961-01-376-4011
MFG
CRYDOM CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
000-121-823
TRANSISTOR
NSN, MFG P/N
5961013764275
NSN
5961-01-376-4275
MFG
FURUNO USA. INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 42.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-247AC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.185 INCHES MINIMUM AND 0.209 INCHES MAXIMUM
OVERALL LENGTH: 1.334 INCHES MINIMUM AND 1.383 INCHES MAXIMUM
OVERALL WIDTH: 0.602 INCHES MINIMUM AND 0.626 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 160.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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99183756
TRANSISTOR
NSN, MFG P/N
5961013764275
NSN
5961-01-376-4275
MFG
THALES
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 42.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-247AC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.185 INCHES MINIMUM AND 0.209 INCHES MAXIMUM
OVERALL LENGTH: 1.334 INCHES MINIMUM AND 1.383 INCHES MAXIMUM
OVERALL WIDTH: 0.602 INCHES MINIMUM AND 0.626 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 160.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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IRFP150
TRANSISTOR
NSN, MFG P/N
5961013764275
NSN
5961-01-376-4275
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 42.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-247AC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.185 INCHES MINIMUM AND 0.209 INCHES MAXIMUM
OVERALL LENGTH: 1.334 INCHES MINIMUM AND 1.383 INCHES MAXIMUM
OVERALL WIDTH: 0.602 INCHES MINIMUM AND 0.626 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 160.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
FBN-L220
TRANSISTOR
NSN, MFG P/N
5961013764276
NSN
5961-01-376-4276
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT USER SERVICE ROYAL NETHERLANDS NAVY
III END ITEM IDENTIFICATION: POWER SUPPLY MODEL LT-280 SERIES
Related Searches:
FBN-L225
TRANSISTOR
NSN, MFG P/N
5961013764277
NSN
5961-01-376-4277
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT USER SERVICE ROYAL NETHERLANDS NAVY
III END ITEM IDENTIFICATION: POWER SUPPLY MODEL LT-280 SERIES
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6F120
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013764278
NSN
5961-01-376-4278
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES NOMINAL FORWARD CURRENT, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 158.0 DEG CELSIUS CASE
OVERALL DIAMETER: 0.470 INCHES MINIMUM AND 0.480 INCHES MAXIMUM
OVERALL LENGTH: 1.245 INCHES MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
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16FLR100S05M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013764279
NSN
5961-01-376-4279
16FLR100S05M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013764279
NSN
5961-01-376-4279
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
FBL-00-236
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013764280
NSN
5961-01-376-4280
FBL-00-236
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013764280
NSN
5961-01-376-4280
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT USER SERVICE ROYAL NETHERLANDS NAVY
III END ITEM IDENTIFICATION: POWER SUPPLY MODEL LT-280 SERIES
Related Searches:
FBM-Z147
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013764281
NSN
5961-01-376-4281
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT USER SERVICE ROYAL NETHERLANDS NAVY
III END ITEM IDENTIFICATION: POWER SUPPLY MODEL LT-280 SERIES
Related Searches:
FBP-00-061
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013764282
NSN
5961-01-376-4282
FBP-00-061
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013764282
NSN
5961-01-376-4282
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT USER SERVICE ROYAL NETHERLANDS NAVY
III END ITEM IDENTIFICATION: POWER SUPPLY MODEL LT-280 SERIES
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89011026
TRANSISTOR
NSN, MFG P/N
5961013764519
NSN
5961-01-376-4519
MFG
DRS C3 SYSTEMS INC. DIV RANGE CONTROL AND UNMANNED SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 1.10 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
III CUBIC MEASURE: 0.026 CUBIC INCHES
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL AND FLANGE PLATED GOLD
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.170 INCHES MAXIMUM
OVERALL LENGTH: 0.795 INCHES MINIMUM AND 0.805 INCHES MAXIMUM
OVERALL WIDTH: 0.720 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 8.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 RIBBON AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
SD 1891
TRANSISTOR
NSN, MFG P/N
5961013764519
NSN
5961-01-376-4519
MFG
STMICROELECTRONICS INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.10 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
III CUBIC MEASURE: 0.026 CUBIC INCHES
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL AND FLANGE PLATED GOLD
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.170 INCHES MAXIMUM
OVERALL LENGTH: 0.795 INCHES MINIMUM AND 0.805 INCHES MAXIMUM
OVERALL WIDTH: 0.720 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 8.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 RIBBON AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
5-81262005-0
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013764821
NSN
5961-01-376-4821
5-81262005-0
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013764821
NSN
5961-01-376-4821
MFG
ISUZU MOTOR CO. LTD
Description
III END ITEM IDENTIFICATION: 2815-01-350-2207
MOUNTING METHOD: BOLT
