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5961-00-999-7345

20 Products

PS6313A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009997345

NSN

5961-00-999-7345

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PS6313A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009997345

NSN

5961-00-999-7345

MFG

TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES

Description

CURRENT RATING PER CHARACTERISTIC: 0.50 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 MAXIMUM REVERSE VOLTAGE, PEAK
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

164-04

TRANSISTOR

NSN, MFG P/N

5961009997351

NSN

5961-00-999-7351

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164-04

TRANSISTOR

NSN, MFG P/N

5961009997351

NSN

5961-00-999-7351

MFG

WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT WITH SPECIFIED VOLTAGE AND 25.00 MILLIAMPERES MAXIMUM EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL LENGTH: 1.803 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.875 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 115.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 15.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

842-164-09

TRANSISTOR

NSN, MFG P/N

5961009997351

NSN

5961-00-999-7351

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842-164-09

TRANSISTOR

NSN, MFG P/N

5961009997351

NSN

5961-00-999-7351

MFG

AMETEK PROGRAMMABLE POWER INC.

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT WITH SPECIFIED VOLTAGE AND 25.00 MILLIAMPERES MAXIMUM EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL LENGTH: 1.803 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.875 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 115.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 15.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

SMD510645

TRANSISTOR

NSN, MFG P/N

5961009997351

NSN

5961-00-999-7351

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SMD510645

TRANSISTOR

NSN, MFG P/N

5961009997351

NSN

5961-00-999-7351

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT WITH SPECIFIED VOLTAGE AND 25.00 MILLIAMPERES MAXIMUM EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL LENGTH: 1.803 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.875 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 115.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 15.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

SPC3004

TRANSISTOR

NSN, MFG P/N

5961009997351

NSN

5961-00-999-7351

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SPC3004

TRANSISTOR

NSN, MFG P/N

5961009997351

NSN

5961-00-999-7351

MFG

API ELECTRONICS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT WITH SPECIFIED VOLTAGE AND 25.00 MILLIAMPERES MAXIMUM EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL LENGTH: 1.803 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.875 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 115.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 15.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

SPT2770

TRANSISTOR

NSN, MFG P/N

5961009997351

NSN

5961-00-999-7351

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SPT2770

TRANSISTOR

NSN, MFG P/N

5961009997351

NSN

5961-00-999-7351

MFG

SOLID STATE DEVICES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT WITH SPECIFIED VOLTAGE AND 25.00 MILLIAMPERES MAXIMUM EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL LENGTH: 1.803 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.875 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 115.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 15.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

1813564-7

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009997372

NSN

5961-00-999-7372

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1813564-7

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009997372

NSN

5961-00-999-7372

MFG

HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER GUIDANCE SYSTEMS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 65.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

419905-20

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009997372

NSN

5961-00-999-7372

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419905-20

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009997372

NSN

5961-00-999-7372

MFG

RAYTHEON COMPANY

Description

CURRENT RATING PER CHARACTERISTIC: 65.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

5127A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009997372

NSN

5961-00-999-7372

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5127A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009997372

NSN

5961-00-999-7372

MFG

NTE ELECTRONICS INC SUB OF SOLID STATE INC

Description

CURRENT RATING PER CHARACTERISTIC: 65.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

MZ712

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009997372

NSN

5961-00-999-7372

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MZ712

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009997372

NSN

5961-00-999-7372

MFG

MICROSEMI CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 65.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

UZ712

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009997372

NSN

5961-00-999-7372

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UZ712

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009997372

NSN

5961-00-999-7372

MFG

MICRO USPD INC

Description

CURRENT RATING PER CHARACTERISTIC: 65.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

996887-1

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009997390

NSN

5961-00-999-7390

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996887-1

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009997390

NSN

5961-00-999-7390

MFG

RAYTHEON COMPANY

995150-23

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009997391

NSN

5961-00-999-7391

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995150-23

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009997391

NSN

5961-00-999-7391

MFG

RAYTHEON COMPANY

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
III END ITEM IDENTIFICATION: RADIO SET
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING METHOD: TERMINAL ALL TRANSISTOR
OVERALL DIAMETER: 0.370 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.260 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM ALL TRANSISTOR
TERMINAL LENGTH: 1.500 INCHES MINIMUM ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR-TO-EMITTER, RESISTANCE BETWEEN BASE AND EMITTER ALL TRANSISTOR

99793

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009997392

NSN

5961-00-999-7392

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99793

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009997392

NSN

5961-00-999-7392

MFG

ITT CORPORATION DBA ITT GILFILLAN

996651-1

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009997393

NSN

5961-00-999-7393

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996651-1

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009997393

NSN

5961-00-999-7393

MFG

RAYTHEON COMPANY

HA7636

TRANSISTOR

NSN, MFG P/N

5961009998710

NSN

5961-00-999-8710

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HA7636

TRANSISTOR

NSN, MFG P/N

5961009998710

NSN

5961-00-999-8710

MFG

L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC. DIV L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON

36A224799P1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009999313

NSN

5961-00-999-9313

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36A224799P1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009999313

NSN

5961-00-999-9313

MFG

GENERAL ELECTRIC CO DIRECT CURRENT MOTOR AND GENERATOR DEPT

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: HELICOPTER, ADVANCE ATTACK, AH-1W, HELICOPTER, CARRIER BASED ASW, SH-60F, AIRCRAFT, SOF ( AC-130H, MC-130H, EC-130E, HC-130), AIRCRAFT, TOMCAT F-14, AIRCRAFT, HERCULES C-130, HELICOPTER, MH-53E, HELICOPTER, USCG SEARCH AND RESCUE, HH-60J, HELICOPTER,
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
~1: SEARCH AND RESCUE, HH-60H, AIRCRAFT, STRATOLIFTER C-135.

36C717867-003

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009999313

NSN

5961-00-999-9313

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36C717867-003

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009999313

NSN

5961-00-999-9313

MFG

GENERAL ELECTRIC CO ARMAMENT AND ELECTRICAL SYSTEMS DEPT ELECTRICAL SYSTEMS PRODUCTS DEPT

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: HELICOPTER, ADVANCE ATTACK, AH-1W, HELICOPTER, CARRIER BASED ASW, SH-60F, AIRCRAFT, SOF ( AC-130H, MC-130H, EC-130E, HC-130), AIRCRAFT, TOMCAT F-14, AIRCRAFT, HERCULES C-130, HELICOPTER, MH-53E, HELICOPTER, USCG SEARCH AND RESCUE, HH-60J, HELICOPTER,
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
~1: SEARCH AND RESCUE, HH-60H, AIRCRAFT, STRATOLIFTER C-135.

36C717867P3

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009999313

NSN

5961-00-999-9313

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36C717867P3

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009999313

NSN

5961-00-999-9313

MFG

GE AVIATION SYSTEMS LLC DBA GE AVIATION

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: HELICOPTER, ADVANCE ATTACK, AH-1W, HELICOPTER, CARRIER BASED ASW, SH-60F, AIRCRAFT, SOF ( AC-130H, MC-130H, EC-130E, HC-130), AIRCRAFT, TOMCAT F-14, AIRCRAFT, HERCULES C-130, HELICOPTER, MH-53E, HELICOPTER, USCG SEARCH AND RESCUE, HH-60J, HELICOPTER,
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
~1: SEARCH AND RESCUE, HH-60H, AIRCRAFT, STRATOLIFTER C-135.

S6834P

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009999313

NSN

5961-00-999-9313

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S6834P

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009999313

NSN

5961-00-999-9313

MFG

ST-SEMICON INC

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: HELICOPTER, ADVANCE ATTACK, AH-1W, HELICOPTER, CARRIER BASED ASW, SH-60F, AIRCRAFT, SOF ( AC-130H, MC-130H, EC-130E, HC-130), AIRCRAFT, TOMCAT F-14, AIRCRAFT, HERCULES C-130, HELICOPTER, MH-53E, HELICOPTER, USCG SEARCH AND RESCUE, HH-60J, HELICOPTER,
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
~1: SEARCH AND RESCUE, HH-60H, AIRCRAFT, STRATOLIFTER C-135.