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5961-00-509-3048
20 Products
KS15724
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005093048
NSN
5961-00-509-3048
MFG
GENERAL ELECTRIC CO ELECTRONIC COMPONENTS DIVISION OF ELECTRONIC ATOMIC AND DEFENSE SYSTEMS GROUP
Description
DESIGN CONTROL REFERENCE: KS15724
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 24454
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
SPS1172
TRANSISTOR
NSN, MFG P/N
5961005067631
NSN
5961-00-506-7631
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 310.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 80.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 250.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 160.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
1854-0420
TRANSISTOR
NSN, MFG P/N
5961005067645
NSN
5961-00-506-7645
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.150 INCHES NOMINAL
OVERALL LENGTH: 0.590 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
S35711
TRANSISTOR
NSN, MFG P/N
5961005067645
NSN
5961-00-506-7645
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.150 INCHES NOMINAL
OVERALL LENGTH: 0.590 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
SJE1952
TRANSISTOR
NSN, MFG P/N
5961005067645
NSN
5961-00-506-7645
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.150 INCHES NOMINAL
OVERALL LENGTH: 0.590 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
SP8744
TRANSISTOR
NSN, MFG P/N
5961005067645
NSN
5961-00-506-7645
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.150 INCHES NOMINAL
OVERALL LENGTH: 0.590 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
FAAT10KV
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005069795
NSN
5961-00-506-9795
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES NOMINAL FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: FAAT10KV
III END ITEM IDENTIFICATION: APPROACH LIGHT SYSTEM (ALS)
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500
OVERALL DIAMETER: 1.380 INCHES MAXIMUM
OVERALL LENGTH: 5.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: PARA 6, AFP 6910.3, CH 47, CH 39 PLANT EQUIPMENT MODIFICATION HANDBOOK "MODIFY SYLFANIA, GE AND HERSHEY FLASHING LIGHT UNITS TO USE SOLID STATE RECTIFIERS", PG 2
TERMINAL CIRCLE DIAMETER: 0.625 INCHES NOMINAL
TERMINAL LENGTH: 0.562 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.4 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
FAATA10KV
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005069795
NSN
5961-00-506-9795
MFG
BRANSON AIRCRAFT CORP
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES NOMINAL FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: FAAT10KV
III END ITEM IDENTIFICATION: APPROACH LIGHT SYSTEM (ALS)
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500
OVERALL DIAMETER: 1.380 INCHES MAXIMUM
OVERALL LENGTH: 5.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: PARA 6, AFP 6910.3, CH 47, CH 39 PLANT EQUIPMENT MODIFICATION HANDBOOK "MODIFY SYLFANIA, GE AND HERSHEY FLASHING LIGHT UNITS TO USE SOLID STATE RECTIFIERS", PG 2
TERMINAL CIRCLE DIAMETER: 0.625 INCHES NOMINAL
TERMINAL LENGTH: 0.562 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.4 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
SA7477
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005069795
NSN
5961-00-506-9795
MFG
SEMTECH CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES NOMINAL FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: FAAT10KV
III END ITEM IDENTIFICATION: APPROACH LIGHT SYSTEM (ALS)
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500
OVERALL DIAMETER: 1.380 INCHES MAXIMUM
OVERALL LENGTH: 5.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: PARA 6, AFP 6910.3, CH 47, CH 39 PLANT EQUIPMENT MODIFICATION HANDBOOK "MODIFY SYLFANIA, GE AND HERSHEY FLASHING LIGHT UNITS TO USE SOLID STATE RECTIFIERS", PG 2
TERMINAL CIRCLE DIAMETER: 0.625 INCHES NOMINAL
TERMINAL LENGTH: 0.562 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.4 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
45412
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005069880
NSN
5961-00-506-9880
MFG
INTERSIL CORPORATION
Description
DESIGN CONTROL REFERENCE: 45412
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 34371
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
52A0003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005069880
NSN
5961-00-506-9880
MFG
SIEMENS ENERGY & AUTOMATION INC. DBA SIEMENS AIRFIELD SOLUTIONS DIV SIEMENS ENERGY & AUTOMATION DBA SIEMENS AIRFIELD SOLUTIONS
Description
DESIGN CONTROL REFERENCE: 45412
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 34371
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
152-0311-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005076872
NSN
5961-00-507-6872
152-0311-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005076872
NSN
5961-00-507-6872
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
OVERALL DIAMETER: 0.280 INCHES MAXIMUM
OVERALL HEIGHT: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: PLUS OR MINUS 5 PCT TOLERANCE ON NOMINAL ZENER VOLTAGE
TERMINAL TYPE AND QUANTITY: 1 SOLDER STUD AND 1 THREADED STUD
Related Searches:
1N2999B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005076872
NSN
5961-00-507-6872
MFG
FREESCALE SEMICONDUCTOR INC.
Description
OVERALL DIAMETER: 0.280 INCHES MAXIMUM
OVERALL HEIGHT: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: PLUS OR MINUS 5 PCT TOLERANCE ON NOMINAL ZENER VOLTAGE
TERMINAL TYPE AND QUANTITY: 1 SOLDER STUD AND 1 THREADED STUD
Related Searches:
1N3690
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005076873
NSN
5961-00-507-6873
MFG
FREESCALE SEMICONDUCTOR INC.
Description
OVERALL DIAMETER: 0.100 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
2N68
TRANSISTOR
NSN, MFG P/N
5961005079956
NSN
5961-00-507-9956
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: -1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.000 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE1353 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.192 INCHES NOMINAL
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC
Related Searches:
472-0777-002
TRANSISTOR
NSN, MFG P/N
5961005080180
NSN
5961-00-508-0180
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 472-0777-002
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: NAVORD OD41152
THE MANUFACTURERS DATA:
Related Searches:
472-0788-001
TRANSISTOR
NSN, MFG P/N
5961005080183
NSN
5961-00-508-0183
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 472-0788-001
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: NAVORD OD41152
Related Searches:
1N198
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961005080733
NSN
5961-00-508-0733
MFG
MURATA ERIE NORTH AMERICA INC DIVOF MURATA ERIE
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
DESIGN CONTROL REFERENCE: 353-0185-000
MANUFACTURERS CODE: 13499
SPECIAL FEATURES: HUGHES AIRCRAFT CO. CONTROLLING AGENCY; COMPONENT TYPE NO. 1N198
THE MANUFACTURERS DATA:
Related Searches:
353-0185-000
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961005080733
NSN
5961-00-508-0733
353-0185-000
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961005080733
NSN
5961-00-508-0733
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
DESIGN CONTROL REFERENCE: 353-0185-000
MANUFACTURERS CODE: 13499
SPECIAL FEATURES: HUGHES AIRCRAFT CO. CONTROLLING AGENCY; COMPONENT TYPE NO. 1N198
THE MANUFACTURERS DATA:
Related Searches:
4JD2D4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005081793
NSN
5961-00-508-1793
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
