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5961-00-474-8511
20 Products
2N4353
TRANSISTOR
NSN, MFG P/N
5961004748511
NSN
5961-00-474-8511
MFG
GENERAL SEMICONDUCTOR INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND 10.00 MICROAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
1910-0009
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004745766
NSN
5961-00-474-5766
MFG
HEWLETT PACKARD CO
Description
DESIGN CONTROL REFERENCE: 212G12
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 50434
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1910-009
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004745766
NSN
5961-00-474-5766
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
DESIGN CONTROL REFERENCE: 212G12
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 50434
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
203-840
TRANSISTOR
NSN, MFG P/N
5961004746115
NSN
5961-00-474-6115
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
2N335
TRANSISTOR
NSN, MFG P/N
5961004746705
NSN
5961-00-474-6705
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: EXCEPT QUALITY CONTROLLED FOR POLARIS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 2N335
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILT19500TYPE2N335
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 80131-2N335 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
21DF2-1-1
TRANSISTOR
NSN, MFG P/N
5961004747867
NSN
5961-00-474-7867
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
30S4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004747870
NSN
5961-00-474-7870
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
357-0021
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004747870
NSN
5961-00-474-7870
MFG
ONAN CORPORATION DBA CUMMINS POWER GENERATION
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
581-085
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004747870
NSN
5961-00-474-7870
MFG
AMPEX SYSTEMS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
014-964
TRANSISTOR
NSN, MFG P/N
5961004747873
NSN
5961-00-474-7873
MFG
AMPEX SYSTEMS CORP
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
40SP113
TRANSISTOR
NSN, MFG P/N
5961004748062
NSN
5961-00-474-8062
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 450.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
928492-501B
TRANSISTOR
NSN, MFG P/N
5961004748062
NSN
5961-00-474-8062
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 450.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
SJ2878H3
TRANSISTOR
NSN, MFG P/N
5961004748062
NSN
5961-00-474-8062
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 450.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
128C917H01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004748243
NSN
5961-00-474-8243
128C917H01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004748243
NSN
5961-00-474-8243
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30000.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: A1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.130 INCHES NOMINAL
OVERALL LENGTH: 6.000 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TURRET
Related Searches:
ED19986
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004748243
NSN
5961-00-474-8243
ED19986
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004748243
NSN
5961-00-474-8243
MFG
ELECTRONIC DEVICES INC DBA E D I
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30000.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: A1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.130 INCHES NOMINAL
OVERALL LENGTH: 6.000 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TURRET
Related Searches:
SES563
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004748243
NSN
5961-00-474-8243
SES563
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004748243
NSN
5961-00-474-8243
MFG
SEMITRONICS CORP
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30000.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: A1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.130 INCHES NOMINAL
OVERALL LENGTH: 6.000 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TURRET
Related Searches:
LT2047
TRANSISTOR
NSN, MFG P/N
5961004748405
NSN
5961-00-474-8405
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.380 INCHES MAXIMUM
OVERALL LENGTH: 0.308 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
S130-261-04
TRANSISTOR
NSN, MFG P/N
5961004748405
NSN
5961-00-474-8405
MFG
GENERAL INSTRUMENT CORPORATION DBA MOTOROLA DIV CONNECTED HOME SOLUTION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.380 INCHES MAXIMUM
OVERALL LENGTH: 0.308 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
2N6281
TRANSISTOR
NSN, MFG P/N
5961004748500
NSN
5961-00-474-8500
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM BASE CURRENT, DC AND 50.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL LENGTH: 0.535 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.875 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6361 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMIT
Related Searches:
C532000494
TRANSISTOR
NSN, MFG P/N
5961004748511
NSN
5961-00-474-8511
MFG
KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND 10.00 MICROAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
