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5961-00-261-8880
20 Products
353-3712-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002618880
NSN
5961-00-261-8880
353-3712-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002618880
NSN
5961-00-261-8880
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.175 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: POINT CONTACT - RF DETECTOR
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.5 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
1N4082A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002617663
NSN
5961-00-261-7663
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES NOMINAL
OVERALL LENGTH: 0.275 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4207 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.673 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
2187522-52
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002617663
NSN
5961-00-261-7663
2187522-52
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002617663
NSN
5961-00-261-7663
MFG
LOCKHEED MARTIN CORP LOCKHEED MARTIN INFORMATION SYSTEMS AUTOMATED SPARES
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES NOMINAL
OVERALL LENGTH: 0.275 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4207 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.673 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1853-0360
TRANSISTOR
NSN, MFG P/N
5961002617671
NSN
5961-00-261-7671
MFG
AGILENT TECHNOLOGIES INC. DIV AGILENT TECHNOLOGIES HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6083 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 90.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, CO
Related Searches:
2N3799A
TRANSISTOR
NSN, MFG P/N
5961002617671
NSN
5961-00-261-7671
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6083 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 90.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, CO
Related Searches:
143-115-027
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002617777
NSN
5961-00-261-7777
143-115-027
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002617777
NSN
5961-00-261-7777
MFG
EATON CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
143-117-033
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002617777
NSN
5961-00-261-7777
143-117-033
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002617777
NSN
5961-00-261-7777
MFG
ENERSYS CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
80-5909
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002617777
NSN
5961-00-261-7777
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
FBMZ127
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002617792
NSN
5961-00-261-7792
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
CURRENT RATING PER CHARACTERISTIC: 8.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES NOMINAL
OVERALL LENGTH: 0.205 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
95533701
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961002617825
NSN
5961-00-261-7825
95533701
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961002617825
NSN
5961-00-261-7825
MFG
SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
04450014-001
TRANSISTOR
NSN, MFG P/N
5961002617836
NSN
5961-00-261-7836
MFG
GETRONICS GOVERNMENT SOLUTIONS LLC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
70943728-001
TRANSISTOR
NSN, MFG P/N
5961002617838
NSN
5961-00-261-7838
MFG
GETRONICS GOVERNMENT SOLUTIONS LLC
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 300.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
943728-001
TRANSISTOR
NSN, MFG P/N
5961002617838
NSN
5961-00-261-7838
MFG
BULL HN INFORMATION SYSTEMS INC
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 300.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
MP3730
TRANSISTOR
NSN, MFG P/N
5961002618162
NSN
5961-00-261-8162
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DESIGN CONTROL REFERENCE: MP3730
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 04713
OVERALL DIAMETER: 0.083 INCHES MAXIMUM
OVERALL HEIGHT: 0.115 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: COLLECTOR CONNECTED TO CASE; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
3N179
TRANSISTOR
NSN, MFG P/N
5961002618165
NSN
5961-00-261-8165
MFG
GENERAL SEMICONDUCTOR INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
DESIGN CONTROL REFERENCE: 3N179
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 14936
OVERALL DIAMETER: 0.208 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
8B1010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002618877
NSN
5961-00-261-8877
MFG
COMMUNICATIONS & POWER INDUSTRIES INC DBA TRAVELING WAVE TECHNOLOGY DIVISION DIV MICROWAVE POWER TUBE PRODUCTS
Description
DESIGN CONTROL REFERENCE: 8B1010
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 99313
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.118 INCHES MINIMUM AND 0.123 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MINIMUM AND 0.212 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 150 GHZ MIN. FREQ JUNCTION CAPACITANCE 0.750 PF PORM 10 PCT AT MINUS 6 VOLTS
TERMINAL CIRCLE DIAMETER: 0.020 INCHES NOMINAL
TERMINAL LENGTH: 0.030 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 FERRULE
THE MANUFACTURERS DATA:
Related Searches:
922-6112-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002618877
NSN
5961-00-261-8877
922-6112-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002618877
NSN
5961-00-261-8877
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
DESIGN CONTROL REFERENCE: 8B1010
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 99313
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.118 INCHES MINIMUM AND 0.123 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MINIMUM AND 0.212 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 150 GHZ MIN. FREQ JUNCTION CAPACITANCE 0.750 PF PORM 10 PCT AT MINUS 6 VOLTS
TERMINAL CIRCLE DIAMETER: 0.020 INCHES NOMINAL
TERMINAL LENGTH: 0.030 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 FERRULE
THE MANUFACTURERS DATA:
Related Searches:
A4X526
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002618877
NSN
5961-00-261-8877
MFG
FEI MICROWAVE INC
Description
DESIGN CONTROL REFERENCE: 8B1010
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 99313
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.118 INCHES MINIMUM AND 0.123 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MINIMUM AND 0.212 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 150 GHZ MIN. FREQ JUNCTION CAPACITANCE 0.750 PF PORM 10 PCT AT MINUS 6 VOLTS
TERMINAL CIRCLE DIAMETER: 0.020 INCHES NOMINAL
TERMINAL LENGTH: 0.030 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 FERRULE
THE MANUFACTURERS DATA:
Related Searches:
758-4685-017
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002618880
NSN
5961-00-261-8880
758-4685-017
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002618880
NSN
5961-00-261-8880
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.175 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: POINT CONTACT - RF DETECTOR
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.5 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
A2X1737
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002618880
NSN
5961-00-261-8880
MFG
FEI MICROWAVE INC
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.175 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: POINT CONTACT - RF DETECTOR
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.5 MINIMUM BREAKDOWN VOLTAGE, DC
