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5980-01-113-5787

20 Products

HLMP-0480

LIGHT EMITTING DIODE

NSN, MFG P/N

5980011135787

NSN

5980-01-113-5787

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HLMP-0480

LIGHT EMITTING DIODE

NSN, MFG P/N

5980011135787

NSN

5980-01-113-5787

MFG

AGILENT TECHNOLOGIES INC. DIV SEMICONDUCTOR PRODUCTS GROUP BUSINESS CENTER

Description

COLOR TONE PRODUCED PER SOURCE: YELLOW LENS
CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS EXTERNAL SURFACES GOLD
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-46
LENS TRANSPARENCY: TRANSLUCENT
LUMINOUS INTENSITY: 5.0 MILLICANDELA NOMINAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES MAXIMUM
OVERALL LENGTH: 0.225 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 120.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL LENGTH: 1.030 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM FORWARD VOLTAGE, DC

OP131W

LIGHT EMITTING DIODE

NSN, MFG P/N

5980011127373

NSN

5980-01-112-7373

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OP131W

LIGHT EMITTING DIODE

NSN, MFG P/N

5980011127373

NSN

5980-01-112-7373

MFG

OPTEK TECHNOLOGY INC

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
POWER RATING PER CHARACTERISTIC: 3.5 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

20068

LIGHT EMITTING DIODE

NSN, MFG P/N

5980011127374

NSN

5980-01-112-7374

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20068

LIGHT EMITTING DIODE

NSN, MFG P/N

5980011127374

NSN

5980-01-112-7374

MFG

OCEAN TECHNOLOGY INC

Description

COLOR TONE PRODUCED PER SOURCE: AMBER LENS
CURRENT RATING PER CHARACTERISTIC: 33.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC
FEATURES PROVIDED: MOUNTING HARDWARE
FUNCTION FOR WHICH DESIGNED: VISIBLE LIGHT EMITTING
INCLOSURE MATERIAL: METAL AND PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LENS TRANSPARENCY: TRANSLUCENT
LUMINOUS INTENSITY: 1.2 MILLICANDELA NOMINAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.216 INCHES
OVERALL DIAMETER: 0.310 INCHES NOMINAL
OVERALL LENGTH: 0.630 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GALLIUM PHOSPHIDE
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD
THREAD QUANTITY PER INCH: 40
THREAD SERIES DESIGNATOR: UNS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 NOMINAL FORWARD VOLTAGE, DC

MAN71A

DISPLAY,OPTOELECTRONIC

NSN, MFG P/N

5980011128432

NSN

5980-01-112-8432

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MAN71A

DISPLAY,OPTOELECTRONIC

NSN, MFG P/N

5980011128432

NSN

5980-01-112-8432

MFG

MONSANTO INDUSTRIAL CHEMICALS CO

Description

CURRENT RATING: 20.0 MILLIAMPERES MAXIMUM
DISPLAY COLOR: RED
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.738 INCHES NOMINAL
OVERALL WIDTH: 0.386 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING: 2.0 VOLTS MAXIMUM

XC526Y

LIGHT EMITTING DIODE

NSN, MFG P/N

5980011129384

NSN

5980-01-112-9384

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XC526Y

LIGHT EMITTING DIODE

NSN, MFG P/N

5980011129384

NSN

5980-01-112-9384

MFG

XCITON CORP

Description

COLOR TONE PRODUCED PER SOURCE: YELLOW LENS
LENS TRANSPARENCY: TRANSLUCENT
OVERALL DIAMETER: 0.185 INCHES NOMINAL
OVERALL LENGTH: 0.340 INCHES NOMINAL
SPECIAL FEATURES: 2 TERMINALS

016-0048

DISPLAY,OPTOELECTRONIC

NSN, MFG P/N

5980011130788

NSN

5980-01-113-0788

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016-0048

DISPLAY,OPTOELECTRONIC

NSN, MFG P/N

5980011130788

NSN

5980-01-113-0788

MFG

MAGNASYNC/MOVIOLA CORPORATION

Description

DESIGN CONTROL REFERENCE: FFD51
III END ITEM IDENTIFICATION: GENERAL APPOINTMENT, TEST
MANUFACTURERS CODE: 05464
SPECIAL FEATURES: O/A DIM.:1.062 IN.LG,0.625 IN.W,0.375 IN.H;15 PINS ON BACKSIDE FOR MTG;
THE MANUFACTURERS DATA:

3015FCN

DISPLAY,OPTOELECTRONIC

NSN, MFG P/N

5980011130788

NSN

5980-01-113-0788

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3015FCN

DISPLAY,OPTOELECTRONIC

NSN, MFG P/N

5980011130788

NSN

5980-01-113-0788

MFG

MAGNASYNC/MOVIOLA CORPORATION

Description

DESIGN CONTROL REFERENCE: FFD51
III END ITEM IDENTIFICATION: GENERAL APPOINTMENT, TEST
MANUFACTURERS CODE: 05464
SPECIAL FEATURES: O/A DIM.:1.062 IN.LG,0.625 IN.W,0.375 IN.H;15 PINS ON BACKSIDE FOR MTG;
THE MANUFACTURERS DATA:

FFD51

DISPLAY,OPTOELECTRONIC

NSN, MFG P/N

5980011130788

NSN

5980-01-113-0788

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FFD51

DISPLAY,OPTOELECTRONIC

NSN, MFG P/N

5980011130788

NSN

5980-01-113-0788

MFG

INDUSTRIAL ELECTRONIC ENGINEERS INC. DBA IEE

Description

DESIGN CONTROL REFERENCE: FFD51
III END ITEM IDENTIFICATION: GENERAL APPOINTMENT, TEST
MANUFACTURERS CODE: 05464
SPECIAL FEATURES: O/A DIM.:1.062 IN.LG,0.625 IN.W,0.375 IN.H;15 PINS ON BACKSIDE FOR MTG;
THE MANUFACTURERS DATA:

101-395-001

LIGHT EMITTING DIODE

NSN, MFG P/N

5980011131662

NSN

5980-01-113-1662

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101-395-001

LIGHT EMITTING DIODE

NSN, MFG P/N

5980011131662

NSN

5980-01-113-1662

MFG

INTEL CORP SALES OFFICE

Description

COLOR TONE PRODUCED PER SOURCE: RED SEMICONDUCTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL LENGTH: 1.050 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

5082-4790

LIGHT EMITTING DIODE

NSN, MFG P/N

5980011131662

NSN

5980-01-113-1662

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5082-4790

LIGHT EMITTING DIODE

NSN, MFG P/N

5980011131662

NSN

5980-01-113-1662

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

COLOR TONE PRODUCED PER SOURCE: RED SEMICONDUCTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL LENGTH: 1.050 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

521-9180

LIGHT EMITTING DIODE

NSN, MFG P/N

5980011131662

NSN

5980-01-113-1662

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521-9180

LIGHT EMITTING DIODE

NSN, MFG P/N

5980011131662

NSN

5980-01-113-1662

MFG

DIALIGHT CORPORATION

Description

COLOR TONE PRODUCED PER SOURCE: RED SEMICONDUCTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL LENGTH: 1.050 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

60-010

LIGHT EMITTING DIODE

NSN, MFG P/N

5980011131662

NSN

5980-01-113-1662

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60-010

LIGHT EMITTING DIODE

NSN, MFG P/N

5980011131662

NSN

5980-01-113-1662

MFG

INTEL CORP SALES OFFICE

Description

COLOR TONE PRODUCED PER SOURCE: RED SEMICONDUCTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL LENGTH: 1.050 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

FLV540

LIGHT EMITTING DIODE

NSN, MFG P/N

5980011131662

NSN

5980-01-113-1662

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FLV540

LIGHT EMITTING DIODE

NSN, MFG P/N

5980011131662

NSN

5980-01-113-1662

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

COLOR TONE PRODUCED PER SOURCE: RED SEMICONDUCTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL LENGTH: 1.050 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

HLMP-3200

LIGHT EMITTING DIODE

NSN, MFG P/N

5980011131662

NSN

5980-01-113-1662

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HLMP-3200

LIGHT EMITTING DIODE

NSN, MFG P/N

5980011131662

NSN

5980-01-113-1662

MFG

AGILENT TECHNOLOGIES INC. DIV SEMICONDUCTOR PRODUCTS GROUP BUSINESS CENTER

Description

COLOR TONE PRODUCED PER SOURCE: RED SEMICONDUCTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL LENGTH: 1.050 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

5082-4990

LIGHT EMITTING DIODE

NSN, MFG P/N

5980011134236

NSN

5980-01-113-4236

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5082-4990

LIGHT EMITTING DIODE

NSN, MFG P/N

5980011134236

NSN

5980-01-113-4236

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SPECIAL FEATURES: GALLIUM PHOSPHIDE GREEN LIGHT EMITTING DIODE; POWER DISSIPATION 120 MW; PEAK FORWARD CURRENT 60 MA; DIFFUSED WIDE ANGLE LENS

HP5082-4990

LIGHT EMITTING DIODE

NSN, MFG P/N

5980011134236

NSN

5980-01-113-4236

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HP5082-4990

LIGHT EMITTING DIODE

NSN, MFG P/N

5980011134236

NSN

5980-01-113-4236

MFG

HEWLETT PACKARD CO

Description

OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SPECIAL FEATURES: GALLIUM PHOSPHIDE GREEN LIGHT EMITTING DIODE; POWER DISSIPATION 120 MW; PEAK FORWARD CURRENT 60 MA; DIFFUSED WIDE ANGLE LENS

RA-780-35

PHOTOELECTRIC CELL

NSN, MFG P/N

5980011134310

NSN

5980-01-113-4310

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RA-780-35

PHOTOELECTRIC CELL

NSN, MFG P/N

5980011134310

NSN

5980-01-113-4310

MFG

GPE CONTROLS INC DBA SHAND & JURS

Description

SPECIAL FEATURES: D/C AND PEAK A/C 250 VOLTS MAX,POWER DISSIPATION 0.3 WATTS MAX,CURRENT 50 MILI-AMPS MAX,TEMP RANGE -75 TO +60 DEG C

124-207-0001

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980011134931

NSN

5980-01-113-4931

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124-207-0001

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980011134931

NSN

5980-01-113-4931

MFG

MOOG INC.

Description

INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON

BTX85

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980011134931

NSN

5980-01-113-4931

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BTX85

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980011134931

NSN

5980-01-113-4931

MFG

SIEMENS MICROELECTRONICS INC OPTOELECTRONICS DIV

Description

INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON

TIL-625

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980011134931

NSN

5980-01-113-4931

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TIL-625

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980011134931

NSN

5980-01-113-4931

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON