My Quote Request
5980-01-030-9542
20 Products
SRD111H-3
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980010309542
NSN
5980-01-030-9542
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,PHOTO
Related Searches:
925963-501B
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980010309542
NSN
5980-01-030-9542
925963-501B
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980010309542
NSN
5980-01-030-9542
MFG
RAYTHEON COMPANY
Description
SEMICONDUCTOR DEVICE,PHOTO
Related Searches:
OP9126-3
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980010309542
NSN
5980-01-030-9542
MFG
OPTEK TECHNOLOGY INC
Description
SEMICONDUCTOR DEVICE,PHOTO
Related Searches:
OSI-1326-1
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980010309542
NSN
5980-01-030-9542
OSI-1326-1
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980010309542
NSN
5980-01-030-9542
MFG
OPTO SENSORS INC
Description
SEMICONDUCTOR DEVICE,PHOTO
Related Searches:
VT301-2
PHOTOELECTRIC CELL
NSN, MFG P/N
5980010314769
NSN
5980-01-031-4769
MFG
EG AND G VACTEC INC
Description
END ITEM IDENTIFICATION: ANFSQ111 FSCM 81995
INCLOSURE MATERIAL: ANY ACCEPTABLE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES NOMINAL
OVERALL HEIGHT: 0.183 INCHES MAXIMUM
SPECIAL FEATURES: DUAL ELEMENT
TERMINAL QUANTITY: 2
TERMINAL TYPE: WIRE LEAD
Related Searches:
054-1072
COUPLER,OPTOELECTRONIC
NSN, MFG P/N
5980010316845
NSN
5980-01-031-6845
MFG
SIEMENS MICROELECTRONICS INC OPTOELECTRONICS DIV
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: 6 PIN DUAL-IN-LINE PKG; GALLIUM ARSENIDE LED; SILICON PHOTOTRANSISTOR DETECTOR; 0.340 IN. NOMINAL LG; 0.120 IN. NOMINAL H; 0.250 IN. NOMINAL W; 3.0 V MAX REVERSE VOLTAGE FOR LED; 7.0 V MAX EMITTER-COLLECTOR VOLTAGE FOR DETECTOR; 100.0 MW MAX POWER
III STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
~1: DISSIPATION FOR LED; 150.0 MW MAX POWER DISSIPATION FOR DETECTOR; 60.0 MA MAX FORWARD CURRENT FOR LED; MINUS 55.0 DEG C TO PLUS 100.0 DEG C OPERATING TEMP
Related Searches:
IL-1
COUPLER,OPTOELECTRONIC
NSN, MFG P/N
5980010316845
NSN
5980-01-031-6845
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: 6 PIN DUAL-IN-LINE PKG; GALLIUM ARSENIDE LED; SILICON PHOTOTRANSISTOR DETECTOR; 0.340 IN. NOMINAL LG; 0.120 IN. NOMINAL H; 0.250 IN. NOMINAL W; 3.0 V MAX REVERSE VOLTAGE FOR LED; 7.0 V MAX EMITTER-COLLECTOR VOLTAGE FOR DETECTOR; 100.0 MW MAX POWER
III STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
~1: DISSIPATION FOR LED; 150.0 MW MAX POWER DISSIPATION FOR DETECTOR; 60.0 MA MAX FORWARD CURRENT FOR LED; MINUS 55.0 DEG C TO PLUS 100.0 DEG C OPERATING TEMP
Related Searches:
IL1
COUPLER,OPTOELECTRONIC
NSN, MFG P/N
5980010316845
NSN
5980-01-031-6845
MFG
SIEMENS MICROELECTRONICS INC OPTOELECTRONICS DIV
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: 6 PIN DUAL-IN-LINE PKG; GALLIUM ARSENIDE LED; SILICON PHOTOTRANSISTOR DETECTOR; 0.340 IN. NOMINAL LG; 0.120 IN. NOMINAL H; 0.250 IN. NOMINAL W; 3.0 V MAX REVERSE VOLTAGE FOR LED; 7.0 V MAX EMITTER-COLLECTOR VOLTAGE FOR DETECTOR; 100.0 MW MAX POWER
III STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
~1: DISSIPATION FOR LED; 150.0 MW MAX POWER DISSIPATION FOR DETECTOR; 60.0 MA MAX FORWARD CURRENT FOR LED; MINUS 55.0 DEG C TO PLUS 100.0 DEG C OPERATING TEMP
Related Searches:
IS0LIT1
COUPLER,OPTOELECTRONIC
NSN, MFG P/N
5980010316845
NSN
5980-01-031-6845
MFG
SIEMENS MICROELECTRONICS INC OPTOELECTRONICS DIV
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: 6 PIN DUAL-IN-LINE PKG; GALLIUM ARSENIDE LED; SILICON PHOTOTRANSISTOR DETECTOR; 0.340 IN. NOMINAL LG; 0.120 IN. NOMINAL H; 0.250 IN. NOMINAL W; 3.0 V MAX REVERSE VOLTAGE FOR LED; 7.0 V MAX EMITTER-COLLECTOR VOLTAGE FOR DETECTOR; 100.0 MW MAX POWER
III STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
~1: DISSIPATION FOR LED; 150.0 MW MAX POWER DISSIPATION FOR DETECTOR; 60.0 MA MAX FORWARD CURRENT FOR LED; MINUS 55.0 DEG C TO PLUS 100.0 DEG C OPERATING TEMP
Related Searches:
2696489
LIGHT EMITTING DIODE
NSN, MFG P/N
5980010318756
NSN
5980-01-031-8756
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
COLOR TONE PRODUCED PER SOURCE: CLEAR LENS
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FUNCTION FOR WHICH DESIGNED: VISIBLE LIGHT EMITTING
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LENS TRANSPARENCY: TRANSPARENT
LUMINOUS INTENSITY: 0.3 MILLICANDELA MINIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.225 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL LENGTH: 0.400 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
FLV5102
LIGHT EMITTING DIODE
NSN, MFG P/N
5980010318756
NSN
5980-01-031-8756
MFG
ABORN ELECTRONICS INC
Description
COLOR TONE PRODUCED PER SOURCE: CLEAR LENS
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FUNCTION FOR WHICH DESIGNED: VISIBLE LIGHT EMITTING
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LENS TRANSPARENCY: TRANSPARENT
LUMINOUS INTENSITY: 0.3 MILLICANDELA MINIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.225 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL LENGTH: 0.400 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
21K1425
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980010318858
NSN
5980-01-031-8858
MFG
EG AND G VACTEC INC
Description
DESIGN CONTROL REFERENCE: 21K1425
III END ITEM IDENTIFICATION: AIDS TO NAVIGATION LANTERN
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 18178
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL HEIGHT: 0.750 INCHES NOMINAL
THE MANUFACTURERS DATA:
Related Searches:
848-125-96
COUPLER,OPTOELECTRONIC
NSN, MFG P/N
5980010320318
NSN
5980-01-032-0318
MFG
AMETEK PROGRAMMABLE POWER INC.
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: PHOTO CONDUCTIVE CELL AND A LIGHT EMITTING DIODE,0.625 IN. LG,0.375 IN. DIA
Related Searches:
990-146-90
COUPLER,OPTOELECTRONIC
NSN, MFG P/N
5980010320318
NSN
5980-01-032-0318
MFG
AMETEK PROGRAMMABLE POWER INC.
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: PHOTO CONDUCTIVE CELL AND A LIGHT EMITTING DIODE,0.625 IN. LG,0.375 IN. DIA
Related Searches:
507-4756-3731-500
LIGHT EMITTING DIODE
NSN, MFG P/N
5980010320826
NSN
5980-01-032-0826
507-4756-3731-500
LIGHT EMITTING DIODE
NSN, MFG P/N
5980010320826
NSN
5980-01-032-0826
MFG
DIALIGHT CORPORATION
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS
INCLOSURE MATERIAL: METAL
LENS TRANSPARENCY: TRANSPARENT
Related Searches:
507-4756-3731-500F
LIGHT EMITTING DIODE
NSN, MFG P/N
5980010320826
NSN
5980-01-032-0826
507-4756-3731-500F
LIGHT EMITTING DIODE
NSN, MFG P/N
5980010320826
NSN
5980-01-032-0826
MFG
DIALIGHT CORPORATION
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS
INCLOSURE MATERIAL: METAL
LENS TRANSPARENCY: TRANSPARENT
Related Searches:
96-R3-CRO
LIGHT EMITTING DIODE
NSN, MFG P/N
5980010320826
NSN
5980-01-032-0826
MFG
DISPLAY PRODUCTS INC. DBA DATA DISPLAY PRODUCTS
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS
INCLOSURE MATERIAL: METAL
LENS TRANSPARENCY: TRANSPARENT
Related Searches:
CM44-21-031-1
LIGHT EMITTING DIODE
NSN, MFG P/N
5980010320826
NSN
5980-01-032-0826
MFG
CHICAGO MINIATURE LIGHTING LLC DBA CHICAGO MINIATURE OPTOELECTRON
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS
INCLOSURE MATERIAL: METAL
LENS TRANSPARENCY: TRANSPARENT
Related Searches:
00169-3
COUPLER,OPTOELECTRONIC
NSN, MFG P/N
5980010324695
NSN
5980-01-032-4695
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: LED-PHOTOTRANSISTOR,BVR 3V MIN,BVCE0 20V MIN,BVCBO 30V MIN,VCE (SAT) 0.5V MAX,ICBO 0.005UA MAX,IF 60MA MAX,HFE 50 MIN
Related Searches:
1990-0407
COUPLER,OPTOELECTRONIC
NSN, MFG P/N
5980010324695
NSN
5980-01-032-4695
MFG
HEWLETT PACKARD CO
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: LED-PHOTOTRANSISTOR,BVR 3V MIN,BVCE0 20V MIN,BVCBO 30V MIN,VCE (SAT) 0.5V MAX,ICBO 0.005UA MAX,IF 60MA MAX,HFE 50 MIN