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5962-01-451-1659
20 Products
AT28C64-15DM/883
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014511659
NSN
5962-01-451-1659
MFG
ATMEL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 8192
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-8751417XA
FEATURES PROVIDED: MONOLITHIC
III END ITEM IDENTIFICATION: VMISC E/I FSCM 80132
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 67268
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EEPROM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-87514
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUITS, MEMORY, DIGITAL, CMOS 8K X 8-BIT EEPROM, MONOLITHIC SILICON
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 300.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM INPUT AND 6.0 VOLTS MAXIMUM INPUT
Related Searches:
5962-8751417XA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014511659
NSN
5962-01-451-1659
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT
Description
(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 8192
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-8751417XA
FEATURES PROVIDED: MONOLITHIC
III END ITEM IDENTIFICATION: VMISC E/I FSCM 80132
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 67268
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EEPROM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-87514
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUITS, MEMORY, DIGITAL, CMOS 8K X 8-BIT EEPROM, MONOLITHIC SILICON
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 300.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM INPUT AND 6.0 VOLTS MAXIMUM INPUT
Related Searches:
5962-8751417XB
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014511659
NSN
5962-01-451-1659
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT
Description
(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 8192
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-8751417XA
FEATURES PROVIDED: MONOLITHIC
III END ITEM IDENTIFICATION: VMISC E/I FSCM 80132
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 67268
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EEPROM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-87514
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUITS, MEMORY, DIGITAL, CMOS 8K X 8-BIT EEPROM, MONOLITHIC SILICON
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 300.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM INPUT AND 6.0 VOLTS MAXIMUM INPUT
Related Searches:
5962-8751417XX
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014511659
NSN
5962-01-451-1659
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT
Description
(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 8192
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-8751417XA
FEATURES PROVIDED: MONOLITHIC
III END ITEM IDENTIFICATION: VMISC E/I FSCM 80132
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 67268
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EEPROM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-87514
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUITS, MEMORY, DIGITAL, CMOS 8K X 8-BIT EEPROM, MONOLITHIC SILICON
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 300.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM INPUT AND 6.0 VOLTS MAXIMUM INPUT
Related Searches:
227B7790-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014511878
NSN
5962-01-451-1878
MFG
GENERAL DYNAMICS ARMAMENT AND TECHNICAL PRODUCTS INC.
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
FEATURES PROVIDED: TESTED TO MIL-STD-883 AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: 1430-01-378-6963 GUIDE MISSILE BATTERY CONTROL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: 16K (2K X 8) CMOS EEPROM
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL INPUT
Related Searches:
227B7790-2
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014511878
NSN
5962-01-451-1878
MFG
GENERAL DYNAMICS ARMAMENT AND TECHNICAL PRODUCTS INC.
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
FEATURES PROVIDED: TESTED TO MIL-STD-883 AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: 1430-01-378-6963 GUIDE MISSILE BATTERY CONTROL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: 16K (2K X 8) CMOS EEPROM
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL INPUT
Related Searches:
AT28C17-25DM/883
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014511878
NSN
5962-01-451-1878
MFG
ATMEL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
FEATURES PROVIDED: TESTED TO MIL-STD-883 AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: 1430-01-378-6963 GUIDE MISSILE BATTERY CONTROL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: 16K (2K X 8) CMOS EEPROM
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL INPUT
Related Searches:
AT28C17E-25DM/883
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014511878
NSN
5962-01-451-1878
AT28C17E-25DM/883
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014511878
NSN
5962-01-451-1878
MFG
ATMEL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
FEATURES PROVIDED: TESTED TO MIL-STD-883 AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: 1430-01-378-6963 GUIDE MISSILE BATTERY CONTROL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: 16K (2K X 8) CMOS EEPROM
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL INPUT
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014511878
NSN
5962-01-451-1878
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
FEATURES PROVIDED: TESTED TO MIL-STD-883 AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: 1430-01-378-6963 GUIDE MISSILE BATTERY CONTROL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: 16K (2K X 8) CMOS EEPROM
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL INPUT
Related Searches:
346414
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014511882
NSN
5962-01-451-1882
MFG
KIDDE TECHNOLOGIES INC DBA WALTER KIDDE AEROSPACE
Description
III END ITEM IDENTIFICATION: C-17A ACFT
Related Searches:
FMA-461F/ES
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014511882
NSN
5962-01-451-1882
MFG
INTERPOINT CORPORATION DBA CRANE ELECTRONICS-REDMOND
Description
III END ITEM IDENTIFICATION: C-17A ACFT
Related Searches:
9966-BJLD
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014511897
NSN
5962-01-451-1897
MFG
BAE SYSTEMS INTEGRATED DEFENSE SOLUTIONS INC.
Description
III END ITEM IDENTIFICATION: ARMAMENT CONTROL SYSTEM, WEAPON CONTROL PANEL 1, G E C MARCONI AVIONICS LTD
Related Searches:
9966-BJLF
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014511898
NSN
5962-01-451-1898
MFG
BAE SYSTEMS INTEGRATED DEFENSE SOLUTIONS INC.
Description
III END ITEM IDENTIFICATION: ARMAMENT CONTROL SYSTEM, WEAPON CONTROL PANEL 1, G E C MARCONI AVIONICS LTD
Related Searches:
CY7C245-45
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014511934
NSN
5962-01-451-1934
MFG
CYPRESS SEMICONDUCTOR CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: CBBL
FEATURES PROVIDED: 3-STATE OUTPUT AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: MILSTAR E/I FSCM 49956
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY CAPACITY: 2K WORD X 8 BIT
MEMORY DEVICE TYPE: PROGRAMMED
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL INPUT
Related Searches:
CY7C245-45DMB
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014511934
NSN
5962-01-451-1934
MFG
CYPRESS SEMICONDUCTOR CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: CBBL
FEATURES PROVIDED: 3-STATE OUTPUT AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: MILSTAR E/I FSCM 49956
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY CAPACITY: 2K WORD X 8 BIT
MEMORY DEVICE TYPE: PROGRAMMED
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL INPUT
Related Searches:
G339253-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014511934
NSN
5962-01-451-1934
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CRITICALITY CODE JUSTIFICATION: CBBL
FEATURES PROVIDED: 3-STATE OUTPUT AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: MILSTAR E/I FSCM 49956
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY CAPACITY: 2K WORD X 8 BIT
MEMORY DEVICE TYPE: PROGRAMMED
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL INPUT
Related Searches:
G371023-105
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014511934
NSN
5962-01-451-1934
MFG
KAISER ALUMINUM AND CHEMICAL CORP WIRE AND CABLE DIV
Description
CRITICALITY CODE JUSTIFICATION: CBBL
FEATURES PROVIDED: 3-STATE OUTPUT AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: MILSTAR E/I FSCM 49956
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY CAPACITY: 2K WORD X 8 BIT
MEMORY DEVICE TYPE: PROGRAMMED
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL INPUT
Related Searches:
NHG371023-105
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014511934
NSN
5962-01-451-1934
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: CBBL
FEATURES PROVIDED: 3-STATE OUTPUT AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: MILSTAR E/I FSCM 49956
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY CAPACITY: 2K WORD X 8 BIT
MEMORY DEVICE TYPE: PROGRAMMED
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL INPUT
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014511934
NSN
5962-01-451-1934
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: CBBL
FEATURES PROVIDED: 3-STATE OUTPUT AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: MILSTAR E/I FSCM 49956
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY CAPACITY: 2K WORD X 8 BIT
MEMORY DEVICE TYPE: PROGRAMMED
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL INPUT
Related Searches:
DG390CJ
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962014511938
NSN
5962-01-451-1938
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
DESIGN FUNCTION AND QUANTITY: 2 SWITCH, ANALOG
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 2 CHANNEL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE
