My Quote Request
5962-01-159-2682
20 Products
N2607N
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011592682
NSN
5962-01-159-2682
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
BODY LENGTH: 1.240 INCHES MINIMUM AND 1.255 INCHES MAXIMUM
BODY WIDTH: 0.545 INCHES MINIMUM AND 0.555 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND HIGH PERFORMANCE AND ERASABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
AH4452
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011592675
NSN
5962-01-159-2675
MFG
AEROFLEX / KDI INC. DIV AEROFLEX/KDI INTEGRATED PRODUCTS
Description
BODY HEIGHT: 0.208 INCHES NOMINAL
BODY OUTSIDE DIAMETER: 0.504 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, GENERAL PURPOSE
FEATURES PROVIDED: CASCADABLE AND THIN FILM AND LOW NOISE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 100.0 MILLIWATTS
OPERATING TEMP RANGE: -54.0 TO 85.0 DEG CELSIUS
STORAGE TEMP RANGE: -62.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 17.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SM9-1970(UTO-1033)
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011592675
NSN
5962-01-159-2675
SM9-1970(UTO-1033)
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011592675
NSN
5962-01-159-2675
MFG
AGILENT TECHNOLOGIES INC. DIV SEMICONDUCTOR PRODUCTS GROUP BUSINESS CENTER
Description
BODY HEIGHT: 0.208 INCHES NOMINAL
BODY OUTSIDE DIAMETER: 0.504 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, GENERAL PURPOSE
FEATURES PROVIDED: CASCADABLE AND THIN FILM AND LOW NOISE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 100.0 MILLIWATTS
OPERATING TEMP RANGE: -54.0 TO 85.0 DEG CELSIUS
STORAGE TEMP RANGE: -62.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 17.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
WJL1K
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011592676
NSN
5962-01-159-2676
MFG
WATKINS-JOHNSON CO
Description
BODY HEIGHT: 0.208 INCHES NOMINAL
BODY OUTSIDE DIAMETER: 0.504 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, LIMITER
FEATURES PROVIDED: THIN FILM AND CASCADABLE AND LOW NOISE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 400.0 MILLIWATTS
OPERATING TEMP RANGE: -54.0 TO 100.0 DEG CELSIUS
STORAGE TEMP RANGE: -62.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 25.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
3133607-00412
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011592677
NSN
5962-01-159-2677
MFG
OCEAN APPLIED RESEARCH CORP
Description
BODY HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-5 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND W/FIELD EFFECT TRANSISTOR SWITCH AND HIGH SPEED AND HIGH IMPEDANCE
III END ITEM IDENTIFICATION: 5895-01-129-1827 CENTRAL COMMUNICATION
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
91540852
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011592677
NSN
5962-01-159-2677
MFG
THALES
Description
BODY HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-5 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND W/FIELD EFFECT TRANSISTOR SWITCH AND HIGH SPEED AND HIGH IMPEDANCE
III END ITEM IDENTIFICATION: 5895-01-129-1827 CENTRAL COMMUNICATION
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
LF412MH
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011592677
NSN
5962-01-159-2677
MFG
NATIONAL SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-5 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND W/FIELD EFFECT TRANSISTOR SWITCH AND HIGH SPEED AND HIGH IMPEDANCE
III END ITEM IDENTIFICATION: 5895-01-129-1827 CENTRAL COMMUNICATION
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN74450J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011592678
NSN
5962-01-159-2678
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH VOLTAGE AND HIGH SPEED AND HIGH CURRENT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 1025.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
SN75450AJ00
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011592678
NSN
5962-01-159-2678
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH VOLTAGE AND HIGH SPEED AND HIGH CURRENT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 1025.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
SN75450BJ
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011592678
NSN
5962-01-159-2678
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH VOLTAGE AND HIGH SPEED AND HIGH CURRENT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 1025.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
ICM7218CIJ1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011592679
NSN
5962-01-159-2679
MFG
INTERSIL CORPORATION
Description
BODY HEIGHT: 0.170 INCHES NOMINAL
BODY LENGTH: 1.460 INCHES MAXIMUM
BODY WIDTH: 0.520 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, LIGHT-EMITTING DIODE
FEATURES PROVIDED: HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
III END ITEM IDENTIFICATION: 6685-00-469-4517 INDICATOR,TEMPE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -20.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 0.3 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ICM7218CIJI
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011592679
NSN
5962-01-159-2679
MFG
INTERSIL CORPORATION
Description
BODY HEIGHT: 0.170 INCHES NOMINAL
BODY LENGTH: 1.460 INCHES MAXIMUM
BODY WIDTH: 0.520 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, LIGHT-EMITTING DIODE
FEATURES PROVIDED: HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
III END ITEM IDENTIFICATION: 6685-00-469-4517 INDICATOR,TEMPE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -20.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 0.3 VOLTS MAXIMUM POWER SOURCE
Related Searches:
DS1630J/883B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011592680
NSN
5962-01-159-2680
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH CURRENT AND HIGH SPEED AND HIGH FREQUENCY
III END ITEM IDENTIFICATION: 5895-01-061-6975 CONTROL,TEST SET
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: HEX 1 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 16.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
104722-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011592681
NSN
5962-01-159-2681
MFG
EDO CORPORATION DIV DEFENSE SYSTEMS
Description
(NON-CORE DATA) BIT QUANTITY: 128
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, STATIC
FEATURES PROVIDED: HERMETICALLY SEALED AND STATIC OPERATION AND LOW POWER AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 1200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011592681
NSN
5962-01-159-2681
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) BIT QUANTITY: 128
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, STATIC
FEATURES PROVIDED: HERMETICALLY SEALED AND STATIC OPERATION AND LOW POWER AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 1200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011592681
NSN
5962-01-159-2681
MFG
NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV
Description
(NON-CORE DATA) BIT QUANTITY: 128
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, STATIC
FEATURES PROVIDED: HERMETICALLY SEALED AND STATIC OPERATION AND LOW POWER AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 1200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
MC14562BBCBS
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011592681
NSN
5962-01-159-2681
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) BIT QUANTITY: 128
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, STATIC
FEATURES PROVIDED: HERMETICALLY SEALED AND STATIC OPERATION AND LOW POWER AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 1200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
MC14562BBCXS
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011592681
NSN
5962-01-159-2681
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) BIT QUANTITY: 128
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, STATIC
FEATURES PROVIDED: HERMETICALLY SEALED AND STATIC OPERATION AND LOW POWER AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 1200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
1818-0506
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011592682
NSN
5962-01-159-2682
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
BODY LENGTH: 1.240 INCHES MINIMUM AND 1.255 INCHES MAXIMUM
BODY WIDTH: 0.545 INCHES MINIMUM AND 0.555 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND HIGH PERFORMANCE AND ERASABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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CN2029
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011592682
NSN
5962-01-159-2682
MFG
SPEEFLO MFG CORP
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
BODY LENGTH: 1.240 INCHES MINIMUM AND 1.255 INCHES MAXIMUM
BODY WIDTH: 0.545 INCHES MINIMUM AND 0.555 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND HIGH PERFORMANCE AND ERASABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE