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5962-01-159-2682

20 Products

N2607N

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011592682

NSN

5962-01-159-2682

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N2607N

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011592682

NSN

5962-01-159-2682

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
BODY LENGTH: 1.240 INCHES MINIMUM AND 1.255 INCHES MAXIMUM
BODY WIDTH: 0.545 INCHES MINIMUM AND 0.555 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND HIGH PERFORMANCE AND ERASABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

AH4452

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011592675

NSN

5962-01-159-2675

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AH4452

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011592675

NSN

5962-01-159-2675

MFG

AEROFLEX / KDI INC. DIV AEROFLEX/KDI INTEGRATED PRODUCTS

Description

BODY HEIGHT: 0.208 INCHES NOMINAL
BODY OUTSIDE DIAMETER: 0.504 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, GENERAL PURPOSE
FEATURES PROVIDED: CASCADABLE AND THIN FILM AND LOW NOISE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 100.0 MILLIWATTS
OPERATING TEMP RANGE: -54.0 TO 85.0 DEG CELSIUS
STORAGE TEMP RANGE: -62.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 17.0 VOLTS MAXIMUM POWER SOURCE

SM9-1970(UTO-1033)

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011592675

NSN

5962-01-159-2675

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SM9-1970(UTO-1033)

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011592675

NSN

5962-01-159-2675

MFG

AGILENT TECHNOLOGIES INC. DIV SEMICONDUCTOR PRODUCTS GROUP BUSINESS CENTER

Description

BODY HEIGHT: 0.208 INCHES NOMINAL
BODY OUTSIDE DIAMETER: 0.504 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, GENERAL PURPOSE
FEATURES PROVIDED: CASCADABLE AND THIN FILM AND LOW NOISE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 100.0 MILLIWATTS
OPERATING TEMP RANGE: -54.0 TO 85.0 DEG CELSIUS
STORAGE TEMP RANGE: -62.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 17.0 VOLTS MAXIMUM POWER SOURCE

WJL1K

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011592676

NSN

5962-01-159-2676

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WJL1K

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011592676

NSN

5962-01-159-2676

MFG

WATKINS-JOHNSON CO

Description

BODY HEIGHT: 0.208 INCHES NOMINAL
BODY OUTSIDE DIAMETER: 0.504 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, LIMITER
FEATURES PROVIDED: THIN FILM AND CASCADABLE AND LOW NOISE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 400.0 MILLIWATTS
OPERATING TEMP RANGE: -54.0 TO 100.0 DEG CELSIUS
STORAGE TEMP RANGE: -62.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 25.0 VOLTS MAXIMUM POWER SOURCE

3133607-00412

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011592677

NSN

5962-01-159-2677

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3133607-00412

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011592677

NSN

5962-01-159-2677

MFG

OCEAN APPLIED RESEARCH CORP

Description

BODY HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-5 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND W/FIELD EFFECT TRANSISTOR SWITCH AND HIGH SPEED AND HIGH IMPEDANCE
III END ITEM IDENTIFICATION: 5895-01-129-1827 CENTRAL COMMUNICATION
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE

91540852

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011592677

NSN

5962-01-159-2677

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91540852

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011592677

NSN

5962-01-159-2677

MFG

THALES

Description

BODY HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-5 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND W/FIELD EFFECT TRANSISTOR SWITCH AND HIGH SPEED AND HIGH IMPEDANCE
III END ITEM IDENTIFICATION: 5895-01-129-1827 CENTRAL COMMUNICATION
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE

LF412MH

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011592677

NSN

5962-01-159-2677

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LF412MH

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011592677

NSN

5962-01-159-2677

MFG

NATIONAL SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-5 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND W/FIELD EFFECT TRANSISTOR SWITCH AND HIGH SPEED AND HIGH IMPEDANCE
III END ITEM IDENTIFICATION: 5895-01-129-1827 CENTRAL COMMUNICATION
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE

SN74450J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011592678

NSN

5962-01-159-2678

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SN74450J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011592678

NSN

5962-01-159-2678

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH VOLTAGE AND HIGH SPEED AND HIGH CURRENT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 1025.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SN75450AJ00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011592678

NSN

5962-01-159-2678

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SN75450AJ00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011592678

NSN

5962-01-159-2678

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH VOLTAGE AND HIGH SPEED AND HIGH CURRENT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 1025.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SN75450BJ

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011592678

NSN

5962-01-159-2678

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SN75450BJ

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011592678

NSN

5962-01-159-2678

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH VOLTAGE AND HIGH SPEED AND HIGH CURRENT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 1025.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

ICM7218CIJ1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011592679

NSN

5962-01-159-2679

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ICM7218CIJ1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011592679

NSN

5962-01-159-2679

MFG

INTERSIL CORPORATION

Description

BODY HEIGHT: 0.170 INCHES NOMINAL
BODY LENGTH: 1.460 INCHES MAXIMUM
BODY WIDTH: 0.520 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, LIGHT-EMITTING DIODE
FEATURES PROVIDED: HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
III END ITEM IDENTIFICATION: 6685-00-469-4517 INDICATOR,TEMPE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -20.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 0.3 VOLTS MAXIMUM POWER SOURCE

ICM7218CIJI

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011592679

NSN

5962-01-159-2679

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ICM7218CIJI

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011592679

NSN

5962-01-159-2679

MFG

INTERSIL CORPORATION

Description

BODY HEIGHT: 0.170 INCHES NOMINAL
BODY LENGTH: 1.460 INCHES MAXIMUM
BODY WIDTH: 0.520 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, LIGHT-EMITTING DIODE
FEATURES PROVIDED: HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
III END ITEM IDENTIFICATION: 6685-00-469-4517 INDICATOR,TEMPE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -20.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 0.3 VOLTS MAXIMUM POWER SOURCE

DS1630J/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011592680

NSN

5962-01-159-2680

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DS1630J/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011592680

NSN

5962-01-159-2680

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH CURRENT AND HIGH SPEED AND HIGH FREQUENCY
III END ITEM IDENTIFICATION: 5895-01-061-6975 CONTROL,TEST SET
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: HEX 1 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 16.0 VOLTS MAXIMUM POWER SOURCE

104722-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011592681

NSN

5962-01-159-2681

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104722-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011592681

NSN

5962-01-159-2681

MFG

EDO CORPORATION DIV DEFENSE SYSTEMS

Description

(NON-CORE DATA) BIT QUANTITY: 128
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, STATIC
FEATURES PROVIDED: HERMETICALLY SEALED AND STATIC OPERATION AND LOW POWER AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 1200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.5 VOLTS MAXIMUM POWER SOURCE

14562B/BCAJC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011592681

NSN

5962-01-159-2681

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14562B/BCAJC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011592681

NSN

5962-01-159-2681

MFG

FREESCALE SEMICONDUCTOR INC.

Description

(NON-CORE DATA) BIT QUANTITY: 128
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, STATIC
FEATURES PROVIDED: HERMETICALLY SEALED AND STATIC OPERATION AND LOW POWER AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 1200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.5 VOLTS MAXIMUM POWER SOURCE

AM0311-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011592681

NSN

5962-01-159-2681

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AM0311-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011592681

NSN

5962-01-159-2681

MFG

NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV

Description

(NON-CORE DATA) BIT QUANTITY: 128
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, STATIC
FEATURES PROVIDED: HERMETICALLY SEALED AND STATIC OPERATION AND LOW POWER AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 1200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.5 VOLTS MAXIMUM POWER SOURCE

MC14562BBCBS

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011592681

NSN

5962-01-159-2681

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MC14562BBCBS

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011592681

NSN

5962-01-159-2681

MFG

FREESCALE SEMICONDUCTOR INC.

Description

(NON-CORE DATA) BIT QUANTITY: 128
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, STATIC
FEATURES PROVIDED: HERMETICALLY SEALED AND STATIC OPERATION AND LOW POWER AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 1200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.5 VOLTS MAXIMUM POWER SOURCE

MC14562BBCXS

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011592681

NSN

5962-01-159-2681

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MC14562BBCXS

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011592681

NSN

5962-01-159-2681

MFG

FREESCALE SEMICONDUCTOR INC.

Description

(NON-CORE DATA) BIT QUANTITY: 128
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, STATIC
FEATURES PROVIDED: HERMETICALLY SEALED AND STATIC OPERATION AND LOW POWER AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 1200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.5 VOLTS MAXIMUM POWER SOURCE

1818-0506

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011592682

NSN

5962-01-159-2682

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1818-0506

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011592682

NSN

5962-01-159-2682

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
BODY LENGTH: 1.240 INCHES MINIMUM AND 1.255 INCHES MAXIMUM
BODY WIDTH: 0.545 INCHES MINIMUM AND 0.555 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND HIGH PERFORMANCE AND ERASABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

CN2029

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011592682

NSN

5962-01-159-2682

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CN2029

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011592682

NSN

5962-01-159-2682

MFG

SPEEFLO MFG CORP

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
BODY LENGTH: 1.240 INCHES MINIMUM AND 1.255 INCHES MAXIMUM
BODY WIDTH: 0.545 INCHES MINIMUM AND 0.555 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND HIGH PERFORMANCE AND ERASABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE