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5962-01-148-5315

20 Products

SG9563/1568J

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011485315

NSN

5962-01-148-5315

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SG9563/1568J

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011485315

NSN

5962-01-148-5315

MFG

MICROSEMI CORP.-INTEGRATED PRODUCTS

1826-0218

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485317

NSN

5962-01-148-5317

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1826-0218

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485317

NSN

5962-01-148-5317

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

11090DC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485318

NSN

5962-01-148-5318

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11090DC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485318

NSN

5962-01-148-5318

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.271 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 PRESCALER
FEATURES PROVIDED: HIGH SPEED AND W/TOTEM POLE OUTPUT AND COMPLEMENTARY OUTPUTS AND W/ENABLE AND W/CLOCK AND ASYNCHRONOUS AND HERMETICALLY SEALED
III OVERALL HEIGHT: 0.365 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 5 INPUT
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

26012410

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485319

NSN

5962-01-148-5319

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26012410

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485319

NSN

5962-01-148-5319

MFG

SYSTRON-DONNER CORP MICROWAVE/INSTRUMENT DIV

SG108AJ883B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011485729

NSN

5962-01-148-5729

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SG108AJ883B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011485729

NSN

5962-01-148-5729

MFG

MICROSEMI CORP.-INTEGRATED PRODUCTS

Description

BODY HEIGHT: 0.170 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HIGH PERFORMANCE AND BURN IN, MIL-STD-883, CLASS B
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS

52397 28015

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011485730

NSN

5962-01-148-5730

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52397 28015

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011485730

NSN

5962-01-148-5730

MFG

THALES DEFENCE DEUTSCHLAND GMBH

Description

BODY HEIGHT: 0.170 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR, VOLTAGE
FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS

SG111J883B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011485730

NSN

5962-01-148-5730

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SG111J883B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011485730

NSN

5962-01-148-5730

MFG

MICROSEMI CORP.-INTEGRATED PRODUCTS

Description

BODY HEIGHT: 0.170 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR, VOLTAGE
FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS

54LS04/BCAJC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485735

NSN

5962-01-148-5735

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54LS04/BCAJC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485735

NSN

5962-01-148-5735

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: TO-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 6 INVERTER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIFICATION/STANDARD DATA: 05869-725000-814 MANUFACTURERS SPECIFICATION CONTROL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

54LS04DMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485735

NSN

5962-01-148-5735

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54LS04DMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485735

NSN

5962-01-148-5735

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: TO-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 6 INVERTER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIFICATION/STANDARD DATA: 05869-725000-814 MANUFACTURERS SPECIFICATION CONTROL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

54LS04J/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485735

NSN

5962-01-148-5735

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54LS04J/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485735

NSN

5962-01-148-5735

MFG

FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: TO-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 6 INVERTER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIFICATION/STANDARD DATA: 05869-725000-814 MANUFACTURERS SPECIFICATION CONTROL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

725000-814

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485735

NSN

5962-01-148-5735

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725000-814

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485735

NSN

5962-01-148-5735

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: TO-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 6 INVERTER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIFICATION/STANDARD DATA: 05869-725000-814 MANUFACTURERS SPECIFICATION CONTROL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

DM54LS04J/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485735

NSN

5962-01-148-5735

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DM54LS04J/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485735

NSN

5962-01-148-5735

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: TO-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 6 INVERTER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIFICATION/STANDARD DATA: 05869-725000-814 MANUFACTURERS SPECIFICATION CONTROL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

S54LS04F/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485735

NSN

5962-01-148-5735

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S54LS04F/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485735

NSN

5962-01-148-5735

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: TO-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 6 INVERTER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIFICATION/STANDARD DATA: 05869-725000-814 MANUFACTURERS SPECIFICATION CONTROL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SNJ54LS04J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485735

NSN

5962-01-148-5735

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SNJ54LS04J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485735

NSN

5962-01-148-5735

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: TO-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 6 INVERTER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIFICATION/STANDARD DATA: 05869-725000-814 MANUFACTURERS SPECIFICATION CONTROL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

54LS00J/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485736

NSN

5962-01-148-5736

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54LS00J/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485736

NSN

5962-01-148-5736

MFG

FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/RESISTOR AND SCHOTTKY AND LOW POWER
III OVERALL HEIGHT: 0.330 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

54LS86J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485737

NSN

5962-01-148-5737

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54LS86J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485737

NSN

5962-01-148-5737

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, EXCLUSIVE OR
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 55.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD

54LS86J/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485737

NSN

5962-01-148-5737

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54LS86J/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485737

NSN

5962-01-148-5737

MFG

FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, EXCLUSIVE OR
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 55.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD

54LS195AJ/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485738

NSN

5962-01-148-5738

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54LS195AJ/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485738

NSN

5962-01-148-5738

MFG

FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ

Description

(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, PARALLEL ACCESS
FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS

54LS51J/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485739

NSN

5962-01-148-5739

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54LS51J/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485739

NSN

5962-01-148-5739

MFG

FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ

Description

BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.271 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, AND-OR INVERT
FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 4 WIDE 2-3-3-2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS

RB54LS158F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485740

NSN

5962-01-148-5740

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RB54LS158F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011485740

NSN

5962-01-148-5740

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.290 INCHES MINIMUM AND 0.320 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 SELECTOR, DATA, MULTIPLEXER
FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B AND HERMETICALLY SEALED AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS