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5962-01-110-6887
20 Products
TL082CP
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011106887
NSN
5962-01-110-6887
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
MICROCIRCUIT,LINEAR
Related Searches:
CD4043AE
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011106592
NSN
5962-01-110-6592
MFG
RCA CORP PICTURE TUBE DIV
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/05103BEA
DESIGN FUNCTION AND QUANTITY: 4 LATCH, NOR, R/S
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND RESETTABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 9 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/51
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/51 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
Related Searches:
JM38510-05103BEB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011106592
NSN
5962-01-110-6592
JM38510-05103BEB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011106592
NSN
5962-01-110-6592
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/05103BEA
DESIGN FUNCTION AND QUANTITY: 4 LATCH, NOR, R/S
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND RESETTABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 9 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/51
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/51 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
Related Searches:
M38510/05103BEA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011106592
NSN
5962-01-110-6592
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/05103BEA
DESIGN FUNCTION AND QUANTITY: 4 LATCH, NOR, R/S
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND RESETTABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 9 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/51
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/51 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
Related Searches:
8-759-240-69
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011106683
NSN
5962-01-110-6683
MFG
SONY ELECTRONICS INC
Description
BODY HEIGHT: 0.105 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 INVERTER
FEATURES PROVIDED: MEDIUM SPEED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
CD4069BE
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011106683
NSN
5962-01-110-6683
MFG
INTERSIL CORPORATION
Description
BODY HEIGHT: 0.105 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 INVERTER
FEATURES PROVIDED: MEDIUM SPEED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
00-837-550-00
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011106706
NSN
5962-01-110-6706
MFG
DIGITAL DEVELOPMENT CORP HAWTHORNE DIV
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 SELECTOR, DATA, MULTIPLEXER, TWO TO ONE LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/BUFFERED OUTPUT AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 23.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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9322DM-B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011106706
NSN
5962-01-110-6706
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 SELECTOR, DATA, MULTIPLEXER, TWO TO ONE LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/BUFFERED OUTPUT AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 23.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
RB54157F
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011106706
NSN
5962-01-110-6706
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 SELECTOR, DATA, MULTIPLEXER, TWO TO ONE LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/BUFFERED OUTPUT AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 23.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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SNC54157J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011106706
NSN
5962-01-110-6706
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 SELECTOR, DATA, MULTIPLEXER, TWO TO ONE LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/BUFFERED OUTPUT AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 23.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
62000112-6001
INTEGRATED CIRCUIT
NSN, MFG P/N
5962011106710
NSN
5962-01-110-6710
MFG
GENICOM CORP
Description
INTEGRATED CIRCUIT
Related Searches:
L144AL
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011106884
NSN
5962-01-110-6884
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.270 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 3 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/RESISTOR AND MONOLITHIC
III END ITEM IDENTIFICATION: 1220-01-119-6049
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: TRIPLE 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 160.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
SM-C-875585
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011106884
NSN
5962-01-110-6884
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.270 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 3 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/RESISTOR AND MONOLITHIC
III END ITEM IDENTIFICATION: 1220-01-119-6049
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: TRIPLE 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 160.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
LM4250F
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011106885
NSN
5962-01-110-6885
MFG
NATIONAL SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.080 INCHES MAXIMUM
BODY LENGTH: 0.275 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND W/RESISTOR AND LOW POWER
III END ITEM IDENTIFICATION: 5999-01-110-6963
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
SM-C-875472
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011106885
NSN
5962-01-110-6885
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
BODY HEIGHT: 0.080 INCHES MAXIMUM
BODY LENGTH: 0.275 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND W/RESISTOR AND LOW POWER
III END ITEM IDENTIFICATION: 5999-01-110-6963
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
304-217
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011106887
NSN
5962-01-110-6887
MFG
RADIOSPARES SAS
Description
MICROCIRCUIT,LINEAR
Related Searches:
5322-209-81395
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011106887
NSN
5962-01-110-6887
MFG
PHILIPS ELECTRICAL LTD
Description
MICROCIRCUIT,LINEAR
Related Searches:
A20614
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011106887
NSN
5962-01-110-6887
MFG
MBDA UK LTD
Description
MICROCIRCUIT,LINEAR
Related Searches:
BO3422291
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011106887
NSN
5962-01-110-6887
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
MICROCIRCUIT,LINEAR
Related Searches:
H010-0353
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011106887
NSN
5962-01-110-6887
MFG
RAVEN ELECTRONICS CORPORATION
Description
MICROCIRCUIT,LINEAR
