Featured Products

My Quote Request

No products added yet

5962-01-081-4889

20 Products

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010814889

NSN

5962-01-081-4889

View More Info

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010814889

NSN

5962-01-081-4889

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 2560
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
BODY LENGTH: 1.240 INCHES MINIMUM AND 1.255 INCHES MAXIMUM
BODY WIDTH: 0.545 INCHES MINIMUM AND 0.555 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HIGH SPEED AND W/ENABLE AND W/BUFFERED OUTPUT AND POSITIVE OUTPUTS AND W/DECODED OUTPUT AND PROGRAMMED AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE

CD4093BMJ883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010814430

NSN

5962-01-081-4430

View More Info

CD4093BMJ883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010814430

NSN

5962-01-081-4430

MFG

NATIONAL SEMICONDUCTOR UK LTD

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.765 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND RETRIGGERABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 13499-351-8332 DRAWING

75737000-2

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010814587

NSN

5962-01-081-4587

View More Info

75737000-2

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010814587

NSN

5962-01-081-4587

MFG

MAGNETIC PERIPHERALS INC OKLAHOMA CITY OPNS SUB OF CONTROL DATA CORP

971054-221

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010814589

NSN

5962-01-081-4589

View More Info

971054-221

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010814589

NSN

5962-01-081-4589

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 2 GATE, AND-OR INVERT
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND EXPANDABLE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 2 WIDE 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 51.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

310410P8

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010814885

NSN

5962-01-081-4885

View More Info

310410P8

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010814885

NSN

5962-01-081-4885

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
BODY LENGTH: 0.370 INCHES MINIMUM AND 0.415 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 SWITCH, ANALOG
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
III END ITEM IDENTIFICATION: COUNTERMEASURES SET,TYPE AN/ALQ-137
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 CHANNEL
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 94117-310410 DRAWING
TIME RATING PER CHACTERISTIC: 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE

DG201AAL/883

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010814885

NSN

5962-01-081-4885

View More Info

DG201AAL/883

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010814885

NSN

5962-01-081-4885

MFG

SILICONIX INCORPORATED D IV SILICONIX

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
BODY LENGTH: 0.370 INCHES MINIMUM AND 0.415 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 SWITCH, ANALOG
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
III END ITEM IDENTIFICATION: COUNTERMEASURES SET,TYPE AN/ALQ-137
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 CHANNEL
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 94117-310410 DRAWING
TIME RATING PER CHACTERISTIC: 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE

DG201AL-2

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010814885

NSN

5962-01-081-4885

View More Info

DG201AL-2

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010814885

NSN

5962-01-081-4885

MFG

SILICONIX INCORPORATED D IV SILICONIX

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
BODY LENGTH: 0.370 INCHES MINIMUM AND 0.415 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 SWITCH, ANALOG
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
III END ITEM IDENTIFICATION: COUNTERMEASURES SET,TYPE AN/ALQ-137
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 CHANNEL
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 94117-310410 DRAWING
TIME RATING PER CHACTERISTIC: 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE

SDG20115

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010814885

NSN

5962-01-081-4885

View More Info

SDG20115

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010814885

NSN

5962-01-081-4885

MFG

SILICONIX INCORPORATED D IV SILICONIX

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
BODY LENGTH: 0.370 INCHES MINIMUM AND 0.415 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 SWITCH, ANALOG
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
III END ITEM IDENTIFICATION: COUNTERMEASURES SET,TYPE AN/ALQ-137
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 CHANNEL
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 94117-310410 DRAWING
TIME RATING PER CHACTERISTIC: 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE

SDG201215

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010814885

NSN

5962-01-081-4885

View More Info

SDG201215

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010814885

NSN

5962-01-081-4885

MFG

SILICONIX INCORPORATED D IV SILICONIX

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
BODY LENGTH: 0.370 INCHES MINIMUM AND 0.415 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 SWITCH, ANALOG
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
III END ITEM IDENTIFICATION: COUNTERMEASURES SET,TYPE AN/ALQ-137
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 CHANNEL
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 94117-310410 DRAWING
TIME RATING PER CHACTERISTIC: 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE

11745823

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010814886

NSN

5962-01-081-4886

View More Info

11745823

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010814886

NSN

5962-01-081-4886

MFG

U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.290 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 375.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 19200-11745823 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 40.0 VOLTS MAXIMUM POWER SOURCE

SG4219

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010814886

NSN

5962-01-081-4886

View More Info

SG4219

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010814886

NSN

5962-01-081-4886

MFG

SILICONIX INCORPORATED D IV SILICONIX

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.290 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 375.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 19200-11745823 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 40.0 VOLTS MAXIMUM POWER SOURCE

54S175F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010814888

NSN

5962-01-081-4888

View More Info

54S175F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010814888

NSN

5962-01-081-4888

MFG

SIGNET SCIENTIFIC CO

Description

BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/07106BFB
DESIGN FUNCTION AND QUANTITY: 4 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND DELAY, D-TYPE AND EDGE TRIGGERED AND W/ENABLE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 516.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/071
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/71 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

85934200-03

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010814888

NSN

5962-01-081-4888

View More Info

85934200-03

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010814888

NSN

5962-01-081-4888

MFG

GENERAL DYNAMICS INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS

Description

BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/07106BFB
DESIGN FUNCTION AND QUANTITY: 4 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND DELAY, D-TYPE AND EDGE TRIGGERED AND W/ENABLE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 516.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/071
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/71 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

M38510/07106BFB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010814888

NSN

5962-01-081-4888

View More Info

M38510/07106BFB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010814888

NSN

5962-01-081-4888

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/07106BFB
DESIGN FUNCTION AND QUANTITY: 4 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND DELAY, D-TYPE AND EDGE TRIGGERED AND W/ENABLE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 516.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/071
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/71 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

M38510/07106BFX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010814888

NSN

5962-01-081-4888

View More Info

M38510/07106BFX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010814888

NSN

5962-01-081-4888

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/07106BFB
DESIGN FUNCTION AND QUANTITY: 4 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND DELAY, D-TYPE AND EDGE TRIGGERED AND W/ENABLE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 516.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/071
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/71 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

2513N/CM2140

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010814889

NSN

5962-01-081-4889

View More Info

2513N/CM2140

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010814889

NSN

5962-01-081-4889

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 2560
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
BODY LENGTH: 1.240 INCHES MINIMUM AND 1.255 INCHES MAXIMUM
BODY WIDTH: 0.545 INCHES MINIMUM AND 0.555 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HIGH SPEED AND W/ENABLE AND W/BUFFERED OUTPUT AND POSITIVE OUTPUTS AND W/DECODED OUTPUT AND PROGRAMMED AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE

DMS 89015B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010814889

NSN

5962-01-081-4889

View More Info

DMS 89015B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010814889

NSN

5962-01-081-4889

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 2560
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
BODY LENGTH: 1.240 INCHES MINIMUM AND 1.255 INCHES MAXIMUM
BODY WIDTH: 0.545 INCHES MINIMUM AND 0.555 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HIGH SPEED AND W/ENABLE AND W/BUFFERED OUTPUT AND POSITIVE OUTPUTS AND W/DECODED OUTPUT AND PROGRAMMED AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE

R0-3-2513

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010814889

NSN

5962-01-081-4889

View More Info

R0-3-2513

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010814889

NSN

5962-01-081-4889

MFG

GENERAL SEMICONDUCTOR INC

Description

(NON-CORE DATA) BIT QUANTITY: 2560
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
BODY LENGTH: 1.240 INCHES MINIMUM AND 1.255 INCHES MAXIMUM
BODY WIDTH: 0.545 INCHES MINIMUM AND 0.555 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HIGH SPEED AND W/ENABLE AND W/BUFFERED OUTPUT AND POSITIVE OUTPUTS AND W/DECODED OUTPUT AND PROGRAMMED AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE

R0-3-2513-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010814889

NSN

5962-01-081-4889

View More Info

R0-3-2513-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010814889

NSN

5962-01-081-4889

MFG

MICROCHIP TECHNOLOGY INC

Description

(NON-CORE DATA) BIT QUANTITY: 2560
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
BODY LENGTH: 1.240 INCHES MINIMUM AND 1.255 INCHES MAXIMUM
BODY WIDTH: 0.545 INCHES MINIMUM AND 0.555 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HIGH SPEED AND W/ENABLE AND W/BUFFERED OUTPUT AND POSITIVE OUTPUTS AND W/DECODED OUTPUT AND PROGRAMMED AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE

R0-3-2513/CGR-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010814889

NSN

5962-01-081-4889

View More Info

R0-3-2513/CGR-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010814889

NSN

5962-01-081-4889

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE

Description

(NON-CORE DATA) BIT QUANTITY: 2560
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
BODY LENGTH: 1.240 INCHES MINIMUM AND 1.255 INCHES MAXIMUM
BODY WIDTH: 0.545 INCHES MINIMUM AND 0.555 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HIGH SPEED AND W/ENABLE AND W/BUFFERED OUTPUT AND POSITIVE OUTPUTS AND W/DECODED OUTPUT AND PROGRAMMED AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE