My Quote Request
5962-01-074-1664
20 Products
LM114H
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010741664
NSN
5962-01-074-1664
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 ARRAY, DIODE-TRANSISTOR
FEATURES PROVIDED: MONOLITHIC AND HIGH GAIN AND HIGH CURRENT
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: DUAL 1 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
Related Searches:
399-607
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010740557
NSN
5962-01-074-0557
MFG
FARNELL COMPONENTS INC DIV OF FARNELL ELECTRONICS PLC
Description
BODY HEIGHT: 0.120 INCHES NOMINAL
BODY LENGTH: 0.370 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN CONTROL REFERENCE: NE532N
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MANUFACTURERS CODE: 18324
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
THE MANUFACTURERS DATA:
Related Searches:
NE532N
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010740557
NSN
5962-01-074-0557
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 0.120 INCHES NOMINAL
BODY LENGTH: 0.370 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN CONTROL REFERENCE: NE532N
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MANUFACTURERS CODE: 18324
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
THE MANUFACTURERS DATA:
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40-012838-01
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010740559
NSN
5962-01-074-0559
MFG
INTERLINK COMMUNICATIONS INC
Description
MICROCIRCUIT,DIGITAL
Related Searches:
51016-0050
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010740559
NSN
5962-01-074-0559
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
MICROCIRCUIT,DIGITAL
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MC14001BAL
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010740559
NSN
5962-01-074-0559
MFG
FREESCALE SEMICONDUCTOR INC.
Description
MICROCIRCUIT,DIGITAL
Related Searches:
580723-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010740987
NSN
5962-01-074-0987
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
BODY LENGTH: 0.175 INCHES NOMINAL
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 642AS2730-3
MANUFACTURERS CODE: 30003
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
THE MANUFACTURERS DATA:
Related Searches:
642AS2730-3
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010740987
NSN
5962-01-074-0987
MFG
NAVAL AIR SYSTEMS COMMAND
Description
BODY LENGTH: 0.175 INCHES NOMINAL
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 642AS2730-3
MANUFACTURERS CODE: 30003
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
THE MANUFACTURERS DATA:
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760DMQB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010740987
NSN
5962-01-074-0987
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY LENGTH: 0.175 INCHES NOMINAL
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 642AS2730-3
MANUFACTURERS CODE: 30003
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
THE MANUFACTURERS DATA:
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642AS2813-2
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010740988
NSN
5962-01-074-0988
MFG
NAVAL AIR SYSTEMS COMMAND
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: HIGH SPEED AND W/FIELD EFFECT TRANSISTOR SWITCH AND MONOLITHIC AND HIGH FREQUENCY
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 CHANNEL AND 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 450.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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DG188AA1883
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010740988
NSN
5962-01-074-0988
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: HIGH SPEED AND W/FIELD EFFECT TRANSISTOR SWITCH AND MONOLITHIC AND HIGH FREQUENCY
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 CHANNEL AND 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 450.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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DG188AA2
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010740988
NSN
5962-01-074-0988
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: HIGH SPEED AND W/FIELD EFFECT TRANSISTOR SWITCH AND MONOLITHIC AND HIGH FREQUENCY
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 CHANNEL AND 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 450.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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442/9/10841 ITEM 27
INTEGRATED CIRCUIT
NSN, MFG P/N
5962010741227
NSN
5962-01-074-1227
442/9/10841 ITEM 27
INTEGRATED CIRCUIT
NSN, MFG P/N
5962010741227
NSN
5962-01-074-1227
MFG
G E C MARCONI DEFENCE SYSTEMS LTD
Description
INTEGRATED CIRCUIT
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LM555
INTEGRATED CIRCUIT
NSN, MFG P/N
5962010741227
NSN
5962-01-074-1227
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
INTEGRATED CIRCUIT
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CD4077BE
INTEGRATED CIRCUIT
NSN, MFG P/N
5962010741228
NSN
5962-01-074-1228
MFG
RCA CORP GOVERNMENT AND COMMERCIAL SYSTEMS COMMERCIAL COMMICATIONS SYSTEMS DIV
Description
INTEGRATED CIRCUIT
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9324297
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010741655
NSN
5962-01-074-1655
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
CAPITANCE RATING PER CHARACTERISTIC: 25.00 OUTPUT PICOFARADS NOMINAL
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 0.50 MILLIAMPERES MINIMUM STAND-BY AND 2.00 MILLIAMPERES MAXIMUM STAND-BY
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLEXER, ANALOG
FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B AND ERASABLE
III END ITEM IDENTIFICATION: TEST SET,ROCKET MANAGEMENT SUBSYSTEM; NSN 1290-01-083-0540
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MAXIMUM POWER DISSIPATION RATING: 725.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT,8 CHANNEL ANALOG MULTIPLEXER
SPECIAL FEATURES: 8 CHANNEL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TIME RATING PER CHACTERISTIC: 0.50 NANOSECONDS MINIMUM ACCESS AND 1.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 4.0 VOLTS NOMINAL HIGH INPUT THRESHOLD
Related Searches:
H1-508 A-8
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010741655
NSN
5962-01-074-1655
MFG
INTERSIL CORPORATION
Description
CAPITANCE RATING PER CHARACTERISTIC: 25.00 OUTPUT PICOFARADS NOMINAL
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 0.50 MILLIAMPERES MINIMUM STAND-BY AND 2.00 MILLIAMPERES MAXIMUM STAND-BY
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLEXER, ANALOG
FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B AND ERASABLE
III END ITEM IDENTIFICATION: TEST SET,ROCKET MANAGEMENT SUBSYSTEM; NSN 1290-01-083-0540
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MAXIMUM POWER DISSIPATION RATING: 725.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT,8 CHANNEL ANALOG MULTIPLEXER
SPECIAL FEATURES: 8 CHANNEL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TIME RATING PER CHACTERISTIC: 0.50 NANOSECONDS MINIMUM ACCESS AND 1.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 4.0 VOLTS NOMINAL HIGH INPUT THRESHOLD
Related Searches:
HI1-508A-8
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010741655
NSN
5962-01-074-1655
MFG
INTERSIL CORPORATION
Description
CAPITANCE RATING PER CHARACTERISTIC: 25.00 OUTPUT PICOFARADS NOMINAL
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 0.50 MILLIAMPERES MINIMUM STAND-BY AND 2.00 MILLIAMPERES MAXIMUM STAND-BY
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLEXER, ANALOG
FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B AND ERASABLE
III END ITEM IDENTIFICATION: TEST SET,ROCKET MANAGEMENT SUBSYSTEM; NSN 1290-01-083-0540
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MAXIMUM POWER DISSIPATION RATING: 725.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT,8 CHANNEL ANALOG MULTIPLEXER
SPECIAL FEATURES: 8 CHANNEL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TIME RATING PER CHACTERISTIC: 0.50 NANOSECONDS MINIMUM ACCESS AND 1.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 4.0 VOLTS NOMINAL HIGH INPUT THRESHOLD
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MIC741-1C
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010741662
NSN
5962-01-074-1662
MFG
ITT SEMICONDUCTORS DIV
Description
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY OUTSIDE DIAMETER: 0.370 INCHES NOMINAL
CASE OUTLINE SOURCE AND DESIGNATOR: CN-1 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
INCLOSURE CONFIGURATION: CAN
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GM820ADA1
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010741664
NSN
5962-01-074-1664
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN AEROSPACE SYSTEMS
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 ARRAY, DIODE-TRANSISTOR
FEATURES PROVIDED: MONOLITHIC AND HIGH GAIN AND HIGH CURRENT
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: DUAL 1 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN