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5962-00-813-4972

20 Products

U9876

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008134972

NSN

5962-00-813-4972

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U9876

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008134972

NSN

5962-00-813-4972

MFG

FORD AEROSPACE CORP ELECTRONICS DIV

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED AND 2 FLIP-FLOP, J-K, MASTER SLAVE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND ASYNCHRONOUS AND MEDIUM POWER AND SYNCHRONOUS AND W/BUFFERED OUTPUT AND RESETTABLE AND W/ENABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 12464-B77T0052 DRAWING
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

U3I909351X

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008134972

NSN

5962-00-813-4972

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U3I909351X

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008134972

NSN

5962-00-813-4972

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED AND 2 FLIP-FLOP, J-K, MASTER SLAVE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND ASYNCHRONOUS AND MEDIUM POWER AND SYNCHRONOUS AND W/BUFFERED OUTPUT AND RESETTABLE AND W/ENABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 12464-B77T0052 DRAWING
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

MU593U

MEMORY UNIT

NSN, MFG P/N

5962008136324

NSN

5962-00-813-6324

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MU593U

MEMORY UNIT

NSN, MFG P/N

5962008136324

NSN

5962-00-813-6324

MFG

JOINT ELECTRONICS TYPE DESIGNATION SYSTEM

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: 512 TO 4096 WORDS,WORD LENGTHS 4 TO 18 BITS,1.5 MS FULL CYCLE TIME850 NS HALF CYCLE TIME,500 NS ACCESS TIME,19.000 IN. W,BY 5.250 IN. HBY 20.700 IN. DEEP,19.000 IN. RACK MTD,GOVT TYPE DATA,/1/ JETDS,TYPE NO. MU-593/U,POWER 150.0 W,PLUS 10.0 W PER BIT

RF1

MEMORY UNIT

NSN, MFG P/N

5962008136324

NSN

5962-00-813-6324

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RF1

MEMORY UNIT

NSN, MFG P/N

5962008136324

NSN

5962-00-813-6324

MFG

AMPEX DATA SYSTEMS CORP COMPUTER PRODUCTS DIV

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: 512 TO 4096 WORDS,WORD LENGTHS 4 TO 18 BITS,1.5 MS FULL CYCLE TIME850 NS HALF CYCLE TIME,500 NS ACCESS TIME,19.000 IN. W,BY 5.250 IN. HBY 20.700 IN. DEEP,19.000 IN. RACK MTD,GOVT TYPE DATA,/1/ JETDS,TYPE NO. MU-593/U,POWER 150.0 W,PLUS 10.0 W PER BIT

398-7386-2061

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008139102

NSN

5962-00-813-9102

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398-7386-2061

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008139102

NSN

5962-00-813-9102

MFG

LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INTEGRATED SYSTEMS & SOLUTIONS

Description

DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HYBRID AND W/RESISTOR AND W/FORMED LEADS
III END ITEM IDENTIFICATION: AN/FTC-31(V)
INCLOSURE CONFIGURATION: FLAT PACK
INPUT CIRCUIT PATTERN: 3 INPUT

398-7386-1016

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008139103

NSN

5962-00-813-9103

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398-7386-1016

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008139103

NSN

5962-00-813-9103

MFG

LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INTEGRATED SYSTEMS & SOLUTIONS

Description

DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: W/FORMED LEADS
INCLOSURE CONFIGURATION: FLAT PACK
INPUT CIRCUIT PATTERN: 2 INPUT

MC308G

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008164512

NSN

5962-00-816-4512

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MC308G

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008164512

NSN

5962-00-816-4512

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, J-K
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND AC COUPLED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 87.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 10 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -5.2 VOLTS MAXIMUM POWER SOURCE

1102

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962008164530

NSN

5962-00-816-4530

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1102

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962008164530

NSN

5962-00-816-4530

MFG

ANALOG DEVICES INC. DIV CORPORATE HEADQUARTERS

2557970-2

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962008164530

NSN

5962-00-816-4530

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2557970-2

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962008164530

NSN

5962-00-816-4530

MFG

RAYTHEON COMPANY DBA RAYTHEON

2557970-2REVE

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962008164530

NSN

5962-00-816-4530

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2557970-2REVE

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962008164530

NSN

5962-00-816-4530

MFG

RAYTHEON COMPANY DBA RAYTHEON

364

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962008164530

NSN

5962-00-816-4530

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364

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962008164530

NSN

5962-00-816-4530

MFG

TELEDYNE INC TELEDYNE COMPONENTS DIV

717320-11

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008164532

NSN

5962-00-816-4532

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717320-11

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008164532

NSN

5962-00-816-4532

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.060 INCHES MAXIMUM
BODY LENGTH: 0.260 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: INTERNALLY COMPENSATED AND NEGATIVE EDGE TRIGGERED AND SYNCHRONOUS AND ASYNCHRONOUS AND PRESETTABLE AND RESETTABLE AND W/ENABLE AND HERMETICALLY SEALED AND MONOLITHIC
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 100.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 05869-717320 DRAWING
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

SC2315FH

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008164532

NSN

5962-00-816-4532

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SC2315FH

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008164532

NSN

5962-00-816-4532

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.060 INCHES MAXIMUM
BODY LENGTH: 0.260 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: INTERNALLY COMPENSATED AND NEGATIVE EDGE TRIGGERED AND SYNCHRONOUS AND ASYNCHRONOUS AND PRESETTABLE AND RESETTABLE AND W/ENABLE AND HERMETICALLY SEALED AND MONOLITHIC
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 100.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 05869-717320 DRAWING
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

26309490

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008164733

NSN

5962-00-816-4733

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26309490

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008164733

NSN

5962-00-816-4733

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH SPEED AND POSITIVE OUTPUTS AND MEDIUM POWER
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 38.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: RESISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 4.0 VOLTS MAXIMUM POWER SOURCE

614685-3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008164733

NSN

5962-00-816-4733

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614685-3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008164733

NSN

5962-00-816-4733

MFG

GENERAL MICROWAVE CORPORATION DBA HERLEY NEWYORK

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH SPEED AND POSITIVE OUTPUTS AND MEDIUM POWER
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 38.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: RESISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 4.0 VOLTS MAXIMUM POWER SOURCE

CUL914

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008164733

NSN

5962-00-816-4733

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CUL914

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008164733

NSN

5962-00-816-4733

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH SPEED AND POSITIVE OUTPUTS AND MEDIUM POWER
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 38.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: RESISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 4.0 VOLTS MAXIMUM POWER SOURCE

MC814G

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008164733

NSN

5962-00-816-4733

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MC814G

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008164733

NSN

5962-00-816-4733

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH SPEED AND POSITIVE OUTPUTS AND MEDIUM POWER
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 38.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: RESISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 4.0 VOLTS MAXIMUM POWER SOURCE

QB400428

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008164733

NSN

5962-00-816-4733

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QB400428

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008164733

NSN

5962-00-816-4733

MFG

HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER BENDIX NAVIGATION AND CONTROL SYSTEMS

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH SPEED AND POSITIVE OUTPUTS AND MEDIUM POWER
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 38.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: RESISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 4.0 VOLTS MAXIMUM POWER SOURCE

U5B991422X

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008164733

NSN

5962-00-816-4733

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U5B991422X

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008164733

NSN

5962-00-816-4733

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH SPEED AND POSITIVE OUTPUTS AND MEDIUM POWER
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 38.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: RESISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 4.0 VOLTS MAXIMUM POWER SOURCE

26309340

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008164745

NSN

5962-00-816-4745

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26309340

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008164745

NSN

5962-00-816-4745

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 BUFFER, INVERTING
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM POWER AND POSITIVE OUTPUTS AND HIGH SPEED
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 1 INPUT
OPERATING TEMP RANGE: -0.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: RESISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 8 PIN
TIME RATING PER CHACTERISTIC: 32.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 32.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 3.6 VOLTS NOMINAL POWER SOURCE