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5962-01-064-9573

20 Products

SN74S112N3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010649573

NSN

5962-01-064-9573

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SN74S112N3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010649573

NSN

5962-01-064-9573

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: W/CLOCK AND W/CLEAR AND W/PRESET AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 7.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 7.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

156-0657-00

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010649576

NSN

5962-01-064-9576

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156-0657-00

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010649576

NSN

5962-01-064-9576

MFG

TEKTRONIX INC. DBA TEKTRONIX

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.295 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND W/ENABLE AND HIGH SPEED AND WIRE-OR OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS NOMINAL POWER SOURCE

DM10414C-J

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010649576

NSN

5962-01-064-9576

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DM10414C-J

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010649576

NSN

5962-01-064-9576

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.295 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND W/ENABLE AND HIGH SPEED AND WIRE-OR OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS NOMINAL POWER SOURCE

DM10414J

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010649576

NSN

5962-01-064-9576

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DM10414J

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010649576

NSN

5962-01-064-9576

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.295 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND W/ENABLE AND HIGH SPEED AND WIRE-OR OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS NOMINAL POWER SOURCE

MCM10144L

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010649576

NSN

5962-01-064-9576

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MCM10144L

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010649576

NSN

5962-01-064-9576

MFG

FREESCALE SEMICONDUCTOR INC.

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.295 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND W/ENABLE AND HIGH SPEED AND WIRE-OR OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS NOMINAL POWER SOURCE

SCM62462L

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010649576

NSN

5962-01-064-9576

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SCM62462L

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010649576

NSN

5962-01-064-9576

MFG

FREESCALE SEMICONDUCTOR INC.

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.295 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND W/ENABLE AND HIGH SPEED AND WIRE-OR OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS NOMINAL POWER SOURCE

29661DC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010649579

NSN

5962-01-064-9579

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29661DC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010649579

NSN

5962-01-064-9579

MFG

FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.155 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 PROM PROGRAM TABLE
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

4004004-01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010649579

NSN

5962-01-064-9579

View More Info

4004004-01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010649579

NSN

5962-01-064-9579

MFG

RAYTHEON TECHNICAL SERVICES COMPANY

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.155 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 PROM PROGRAM TABLE
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

4004913-55

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010649579

NSN

5962-01-064-9579

View More Info

4004913-55

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010649579

NSN

5962-01-064-9579

MFG

RAYTHEON TECHNICAL SERVICES COMPANY

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.155 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 PROM PROGRAM TABLE
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

93427DC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010649579

NSN

5962-01-064-9579

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93427DC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010649579

NSN

5962-01-064-9579

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.155 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 PROM PROGRAM TABLE
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

D3621-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010649579

NSN

5962-01-064-9579

View More Info

D3621-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010649579

NSN

5962-01-064-9579

MFG

INTEL CORP SALES OFFICE

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.155 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 PROM PROGRAM TABLE
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

DM74S287J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010649579

NSN

5962-01-064-9579

View More Info

DM74S287J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010649579

NSN

5962-01-064-9579

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.155 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 PROM PROGRAM TABLE
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

HM1-7611-5

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010649579

NSN

5962-01-064-9579

View More Info

HM1-7611-5

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010649579

NSN

5962-01-064-9579

MFG

INTERSIL CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.155 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 PROM PROGRAM TABLE
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

MM6301-1J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010649579

NSN

5962-01-064-9579

View More Info

MM6301-1J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010649579

NSN

5962-01-064-9579

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.155 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 PROM PROGRAM TABLE
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

N82S129F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010649579

NSN

5962-01-064-9579

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N82S129F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010649579

NSN

5962-01-064-9579

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.155 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 PROM PROGRAM TABLE
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 005

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010649579

NSN

5962-01-064-9579

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ROM/PROM FAMILY 005

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010649579

NSN

5962-01-064-9579

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.155 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 PROM PROGRAM TABLE
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

SK010643

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010649579

NSN

5962-01-064-9579

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SK010643

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010649579

NSN

5962-01-064-9579

MFG

RAYTHEON TECHNICAL SERVICES COMPANY

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.155 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 PROM PROGRAM TABLE
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

1816-0352

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010649584

NSN

5962-01-064-9584

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1816-0352

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010649584

NSN

5962-01-064-9584

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.870 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMABLE AND PROGRAMMED AND W/OPEN COLLECTOR AND W/DECODED OUTPUT AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.5 VOLTS MAXIMUM POWER SOURCE

6200-1N

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010649584

NSN

5962-01-064-9584

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6200-1N

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010649584

NSN

5962-01-064-9584

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.870 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMABLE AND PROGRAMMED AND W/OPEN COLLECTOR AND W/DECODED OUTPUT AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.5 VOLTS MAXIMUM POWER SOURCE

SN74187N

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010649584

NSN

5962-01-064-9584

View More Info

SN74187N

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010649584

NSN

5962-01-064-9584

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.870 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMABLE AND PROGRAMMED AND W/OPEN COLLECTOR AND W/DECODED OUTPUT AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.5 VOLTS MAXIMUM POWER SOURCE