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5962-00-352-9285
20 Products
UT0-1501
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962003529285
NSN
5962-00-352-9285
MFG
AGILENT TECHNOLOGIES INC. DIV SEMICONDUCTOR PRODUCTS GROUP BUSINESS CENTER
Description
BODY HEIGHT: 0.175 INCHES NOMINAL
BODY OUTSIDE DIAMETER: 0.450 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, ULTRA HIGH FREQUENCY AND 1 AMPLIFIER, VERY HIGH FREQUENCY
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 1 INPUT
OPERATING TEMP RANGE: -54.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: 5 TO 1500 MHZ MINIMUM FLAT FREQ RESPONSE; 10 MA INPUT CURRENT
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
GEM12501BDC
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003528853
NSN
5962-00-352-8853
MFG
SARNOFF CORPORATION
Description
III END ITEM IDENTIFICATION: F-15 AN/APG-63 RADAR
Related Searches:
HL50841
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003528853
NSN
5962-00-352-8853
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
III END ITEM IDENTIFICATION: F-15 AN/APG-63 RADAR
Related Searches:
SC15185FH3
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003528853
NSN
5962-00-352-8853
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: F-15 AN/APG-63 RADAR
Related Searches:
SD12703
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003528853
NSN
5962-00-352-8853
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
III END ITEM IDENTIFICATION: F-15 AN/APG-63 RADAR
Related Searches:
SN23850W
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003528853
NSN
5962-00-352-8853
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
III END ITEM IDENTIFICATION: F-15 AN/APG-63 RADAR
Related Searches:
SNJ5472W
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003528853
NSN
5962-00-352-8853
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
III END ITEM IDENTIFICATION: F-15 AN/APG-63 RADAR
Related Searches:
115153-0001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003529111
NSN
5962-00-352-9111
MFG
THALES AVIONICS LTD
Description
BODY HEIGHT: 0.105 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AB JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY AND 1 COUNTER, RIPPLE
FEATURES PROVIDED: MONOLITHIC AND NEGATIVE EDGE TRIGGERED AND POSITIVE OUTPUTS AND W/BUFFERED OUTPUT AND MEDIUM SPEED AND W/CARRY LOOKAHEAD AND RESETTABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 14 STAGE
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 650.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 650.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
A3603
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003529111
NSN
5962-00-352-9111
MFG
AERONAUTICAL COMMUNICATIONS EQUIPMENT INC
Description
BODY HEIGHT: 0.105 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AB JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY AND 1 COUNTER, RIPPLE
FEATURES PROVIDED: MONOLITHIC AND NEGATIVE EDGE TRIGGERED AND POSITIVE OUTPUTS AND W/BUFFERED OUTPUT AND MEDIUM SPEED AND W/CARRY LOOKAHEAD AND RESETTABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 14 STAGE
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 650.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 650.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
A3606
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003529111
NSN
5962-00-352-9111
MFG
AERONAUTICAL COMMUNICATIONS EQUIPMENT INC
Description
BODY HEIGHT: 0.105 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AB JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY AND 1 COUNTER, RIPPLE
FEATURES PROVIDED: MONOLITHIC AND NEGATIVE EDGE TRIGGERED AND POSITIVE OUTPUTS AND W/BUFFERED OUTPUT AND MEDIUM SPEED AND W/CARRY LOOKAHEAD AND RESETTABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 14 STAGE
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 650.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 650.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
CD4020AE
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003529111
NSN
5962-00-352-9111
MFG
INTERSIL CORPORATION
Description
BODY HEIGHT: 0.105 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AB JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY AND 1 COUNTER, RIPPLE
FEATURES PROVIDED: MONOLITHIC AND NEGATIVE EDGE TRIGGERED AND POSITIVE OUTPUTS AND W/BUFFERED OUTPUT AND MEDIUM SPEED AND W/CARRY LOOKAHEAD AND RESETTABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 14 STAGE
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 650.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 650.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
CD4020BCN
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003529111
NSN
5962-00-352-9111
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.105 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AB JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY AND 1 COUNTER, RIPPLE
FEATURES PROVIDED: MONOLITHIC AND NEGATIVE EDGE TRIGGERED AND POSITIVE OUTPUTS AND W/BUFFERED OUTPUT AND MEDIUM SPEED AND W/CARRY LOOKAHEAD AND RESETTABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 14 STAGE
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 650.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 650.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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MC14020CP
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003529111
NSN
5962-00-352-9111
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.105 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AB JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY AND 1 COUNTER, RIPPLE
FEATURES PROVIDED: MONOLITHIC AND NEGATIVE EDGE TRIGGERED AND POSITIVE OUTPUTS AND W/BUFFERED OUTPUT AND MEDIUM SPEED AND W/CARRY LOOKAHEAD AND RESETTABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 14 STAGE
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 650.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 650.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
MM5620AN
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003529111
NSN
5962-00-352-9111
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.105 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AB JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY AND 1 COUNTER, RIPPLE
FEATURES PROVIDED: MONOLITHIC AND NEGATIVE EDGE TRIGGERED AND POSITIVE OUTPUTS AND W/BUFFERED OUTPUT AND MEDIUM SPEED AND W/CARRY LOOKAHEAD AND RESETTABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 14 STAGE
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 650.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 650.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
932308-501B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003529253
NSN
5962-00-352-9253
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.270 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 28.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
93598
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003529253
NSN
5962-00-352-9253
MFG
MTS MICROELECTRONICS INC DBA M T S MICRO ELECTRONICS
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.270 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 28.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
DMS 80015B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003529253
NSN
5962-00-352-9253
MFG
DLA LAND AND MARITIME
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.270 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 28.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
H106AL2
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003529253
NSN
5962-00-352-9253
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.270 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 28.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
H106AL883B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003529253
NSN
5962-00-352-9253
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.270 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 28.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SH0606
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003529253
NSN
5962-00-352-9253
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.270 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 28.0 VOLTS MAXIMUM POWER SOURCE
