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5962-00-166-7961

20 Products

9401-00005

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001667961

NSN

5962-00-166-7961

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9401-00005

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001667961

NSN

5962-00-166-7961

MFG

BAE SYSTEMS OPERATIONS LTD

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 BUFFER, NAND
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: K0656-CS94-1066-320/330 DRAWING

SI3002BK

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001665716

NSN

5962-00-166-5716

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SI3002BK

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001665716

NSN

5962-00-166-5716

MFG

SILICONIX INCORPORATED D IV SILICONIX

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, SWITCH, FIELD EFFECT TRANSISTOR AND 2 SWITCH, ANALOG
FEATURES PROVIDED: BIPOLAR AND HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 2 CHANNEL
MAXIMUM POWER DISSIPATION RATING: 1200.0 MILLIWATTS
OPERATING TEMP RANGE: -20.0 TO 85.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 1500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -10.0 VOLTS MINIMUM POWER SOURCE AND 10.0 VOLTS MAXIMUM POWER SOURCE

01007-007-01

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001665728

NSN

5962-00-166-5728

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01007-007-01

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001665728

NSN

5962-00-166-5728

MFG

RACON INC

Description

BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.365 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GENERATOR, FUNCTION AND 1 OSCILLATOR, VOLTAGE CONTROLLED
FEATURES PROVIDED: ADJUSTABLE AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMABLE AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.0 VOLTS MAXIMUM POWER SOURCE

351-1204-020

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001665728

NSN

5962-00-166-5728

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351-1204-020

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001665728

NSN

5962-00-166-5728

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.365 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GENERATOR, FUNCTION AND 1 OSCILLATOR, VOLTAGE CONTROLLED
FEATURES PROVIDED: ADJUSTABLE AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMABLE AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.0 VOLTS MAXIMUM POWER SOURCE

52235-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001665728

NSN

5962-00-166-5728

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52235-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001665728

NSN

5962-00-166-5728

MFG

HAMILTON STANDARD ELECTRONICS SYSTEMS INC TELE-DYNAMICS DIV

Description

BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.365 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GENERATOR, FUNCTION AND 1 OSCILLATOR, VOLTAGE CONTROLLED
FEATURES PROVIDED: ADJUSTABLE AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMABLE AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.0 VOLTS MAXIMUM POWER SOURCE

LM566CN

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001665728

NSN

5962-00-166-5728

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LM566CN

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001665728

NSN

5962-00-166-5728

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.365 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GENERATOR, FUNCTION AND 1 OSCILLATOR, VOLTAGE CONTROLLED
FEATURES PROVIDED: ADJUSTABLE AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMABLE AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.0 VOLTS MAXIMUM POWER SOURCE

NE566N

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001665728

NSN

5962-00-166-5728

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NE566N

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001665728

NSN

5962-00-166-5728

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.365 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GENERATOR, FUNCTION AND 1 OSCILLATOR, VOLTAGE CONTROLLED
FEATURES PROVIDED: ADJUSTABLE AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMABLE AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.0 VOLTS MAXIMUM POWER SOURCE

3181924

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001665919

NSN

5962-00-166-5919

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3181924

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001665919

NSN

5962-00-166-5919

MFG

HONEYWELL INTERNATIONAL INC . DBA HONEYWELL DIV AEROSPACE - TEMPE WEST WARNER ROAD

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, DIFFERENTIAL
FEATURES PROVIDED: BURN IN AND W/RESISTOR AND W/COMMON MODE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 10 PIN
TEST DATA DOCUMENT: 77068-3181924 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -14.0 VOLTS MINIMUM POWER SOURCE AND 14.0 VOLTS MAXIMUM POWER SOURCE

85993

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001665919

NSN

5962-00-166-5919

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85993

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001665919

NSN

5962-00-166-5919

MFG

NUMAX ELECTRONICS INC

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, DIFFERENTIAL
FEATURES PROVIDED: BURN IN AND W/RESISTOR AND W/COMMON MODE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 10 PIN
TEST DATA DOCUMENT: 77068-3181924 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -14.0 VOLTS MINIMUM POWER SOURCE AND 14.0 VOLTS MAXIMUM POWER SOURCE

MC1519G

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001665919

NSN

5962-00-166-5919

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MC1519G

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001665919

NSN

5962-00-166-5919

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, DIFFERENTIAL
FEATURES PROVIDED: BURN IN AND W/RESISTOR AND W/COMMON MODE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 10 PIN
TEST DATA DOCUMENT: 77068-3181924 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -14.0 VOLTS MINIMUM POWER SOURCE AND 14.0 VOLTS MAXIMUM POWER SOURCE

TS-3428

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001665919

NSN

5962-00-166-5919

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TS-3428

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001665919

NSN

5962-00-166-5919

MFG

MICROSEMI CORP.- MASSACHUSETTS DBA MICROSEMI LAWRENCE

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, DIFFERENTIAL
FEATURES PROVIDED: BURN IN AND W/RESISTOR AND W/COMMON MODE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 10 PIN
TEST DATA DOCUMENT: 77068-3181924 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -14.0 VOLTS MINIMUM POWER SOURCE AND 14.0 VOLTS MAXIMUM POWER SOURCE

150065

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001666198

NSN

5962-00-166-6198

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150065

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001666198

NSN

5962-00-166-6198

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRMMAN NORDEN SYSTEMS DIV NAVAL AND MARINE SYSTEMS DIVISION

Description

BODY HEIGHT: 0.590 INCHES MAXIMUM
BODY LENGTH: 2.160 INCHES MINIMUM AND 2.180 INCHES MAXIMUM
BODY WIDTH: 1.525 INCHES MINIMUM AND 1.545 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, TRACKING
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 5 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

4024

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001666198

NSN

5962-00-166-6198

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4024

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001666198

NSN

5962-00-166-6198

MFG

DATA DEVICE CORPORATION

Description

BODY HEIGHT: 0.590 INCHES MAXIMUM
BODY LENGTH: 2.160 INCHES MINIMUM AND 2.180 INCHES MAXIMUM
BODY WIDTH: 1.525 INCHES MINIMUM AND 1.545 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, TRACKING
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 5 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

11011

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962001666256

NSN

5962-00-166-6256

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11011

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962001666256

NSN

5962-00-166-6256

MFG

INTEL CORP SALES OFFICE

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.055 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND LOW POWER AND 3-STATE OUTPUT AND WIRE-OR OUTPUTS AND EXPANDABLE AND W/DECODED OUTPUT AND W/BUFFERED OUTPUT AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 160.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -20.0 VOLTS MINIMUM POWER SOURCE AND 5.0 VOLTS MAXIMUM POWER SOURCE

462793-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962001666256

NSN

5962-00-166-6256

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462793-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962001666256

NSN

5962-00-166-6256

MFG

RAYTHEON COMPANY DIV AMDS

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.055 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND LOW POWER AND 3-STATE OUTPUT AND WIRE-OR OUTPUTS AND EXPANDABLE AND W/DECODED OUTPUT AND W/BUFFERED OUTPUT AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 160.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -20.0 VOLTS MINIMUM POWER SOURCE AND 5.0 VOLTS MAXIMUM POWER SOURCE

DMS 82108B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962001666256

NSN

5962-00-166-6256

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DMS 82108B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962001666256

NSN

5962-00-166-6256

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.055 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND LOW POWER AND 3-STATE OUTPUT AND WIRE-OR OUTPUTS AND EXPANDABLE AND W/DECODED OUTPUT AND W/BUFFERED OUTPUT AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 160.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -20.0 VOLTS MINIMUM POWER SOURCE AND 5.0 VOLTS MAXIMUM POWER SOURCE

128C822H01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001667407

NSN

5962-00-166-7407

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128C822H01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001667407

NSN

5962-00-166-7407

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

(NON-CORE DATA) BIT QUANTITY: 426
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: 128C822H01
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, DYNAMIC
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND W/ENABLE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 5 INPUT
MANUFACTURERS CODE: 97942
MAXIMUM POWER DISSIPATION RATING: 450.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 97942-128C822 DRAWING
THE MANUFACTURERS DATA:

48-030212-01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001667923

NSN

5962-00-166-7923

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48-030212-01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001667923

NSN

5962-00-166-7923

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION

C1813

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001667923

NSN

5962-00-166-7923

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C1813

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001667923

NSN

5962-00-166-7923

MFG

SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC POCATELLO ID MANUFACTURING FACILITY DBA ON SEMICONDUCTOR

9009DM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001667961

NSN

5962-00-166-7961

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9009DM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001667961

NSN

5962-00-166-7961

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 BUFFER, NAND
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: K0656-CS94-1066-320/330 DRAWING