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5961-01-540-3438

20 Products

0586075

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015403438

NSN

5961-01-540-3438

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0586075

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015403438

NSN

5961-01-540-3438

MFG

BRP US INC.

Description

III END ITEM IDENTIFICATION: ENGINE, OUTBOARD, MODEL J90PLSD, STD ROTATION
SPECIAL FEATURES: CXCY: RECTIFIER & REGULATOR

MGFC42V5258

TRANSISTOR

NSN, MFG P/N

5961015397103

NSN

5961-01-539-7103

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MGFC42V5258

TRANSISTOR

NSN, MFG P/N

5961015397103

NSN

5961-01-539-7103

MFG

MITSUBISHI INTERNATIONAL CORPORATION DIV SEMICONDUCTOR AND ELECTRONIC DEVICES DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 4.50 AMPERES NOMINAL DRAIN CURRENT
FEATURES PROVIDED: HIGH POWER
III END ITEM IDENTIFICATION: 5.2-5.8 GHZ BAND POWER AMPLIFIER
INCLOSURE MATERIAL: CERAMIC AND METAL
POWER RATING PER CHARACTERISTIC: 78.9 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON

MGFC39V5258

TRANSISTOR

NSN, MFG P/N

5961015397104

NSN

5961-01-539-7104

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MGFC39V5258

TRANSISTOR

NSN, MFG P/N

5961015397104

NSN

5961-01-539-7104

MFG

MITSUBISHI INTERNATIONAL CORPORATION DIV SEMICONDUCTOR AND ELECTRONIC DEVICES DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 2.20 AMPERES NOMINAL DRAIN CURRENT
FEATURES PROVIDED: HIGH POWER
III END ITEM IDENTIFICATION: 5.2-5.8 GHZ BAND POWER AMPLIFIER
INCLOSURE MATERIAL: CERAMIC AND METAL
POWER RATING PER CHARACTERISTIC: 42.8 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON

7006850ITEM85

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015397382

NSN

5961-01-539-7382

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7006850ITEM85

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015397382

NSN

5961-01-539-7382

MFG

NAVAL SEA SYSTEMS COMMAND

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: IRKE56/12A
MANUFACTURERS CODE: 59993
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:

IRKE56/12A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015397382

NSN

5961-01-539-7382

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IRKE56/12A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015397382

NSN

5961-01-539-7382

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: IRKE56/12A
MANUFACTURERS CODE: 59993
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:

808493A 1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015397528

NSN

5961-01-539-7528

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808493A 1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015397528

NSN

5961-01-539-7528

MFG

BRUNSWICK CORPORATION DBA MERCURY MARINE DIV MERCURY MARINE

Description

III END ITEM IDENTIFICATION: ENGINE, OUTBOARD, 225 EFI, 4 STROKE, STANDARD ROTATION
SPECIAL FEATURES: TYPICALLY CONNECTS TO 2 BATTERIES AND 1 ALTERNATOR

1E130-3

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961015398390

NSN

5961-01-539-8390

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1E130-3

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961015398390

NSN

5961-01-539-8390

MFG

COMPOSITE ENGINEERING INC

395-5688

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961015399579

NSN

5961-01-539-9579

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395-5688

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961015399579

NSN

5961-01-539-9579

MFG

RS COMPONENTS SPA

Description

SPECIAL FEATURES: DYNAMIC DV/DT RATING; 175 DEGREE C OPERATING TEMPERATURE; FAST SWITCHING; FULLY AVALANCHE RATED; EASE OF PARALLELING; SIMPLE DRIVE REQUIREMENTS

IRFP250N

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961015399579

NSN

5961-01-539-9579

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IRFP250N

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961015399579

NSN

5961-01-539-9579

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

SPECIAL FEATURES: DYNAMIC DV/DT RATING; 175 DEGREE C OPERATING TEMPERATURE; FAST SWITCHING; FULLY AVALANCHE RATED; EASE OF PARALLELING; SIMPLE DRIVE REQUIREMENTS

28349/038

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015399920

NSN

5961-01-539-9920

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28349/038

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015399920

NSN

5961-01-539-9920

MFG

AEROFLEX WICHITA INC.

Description

CAPACITANCE RATING IN PICOFARADS: 1.2 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: LOW NOISE
III END ITEM IDENTIFICATION: GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT; 29471(51190), TEST SET, RADIO
III PART NAME ASSIGNED BY CONTROLLING AGENCY: AGILENT HSMS-281X SURFACE MOUNT RF SCHOTTKY BARRIER DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.8 MILLIMETERS MINIMUM AND 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.8 MILLIMETERS MINIMUM AND 3.1 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.1 MILLIMETERS MINIMUM AND 2.7 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LEAD FREE; LOW FLICKER NOISE; UNCONNECTED PAIR
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.4 MAXIMUM FORWARD VOLTAGE, DC

HSMS-2815-TR1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015399920

NSN

5961-01-539-9920

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HSMS-2815-TR1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015399920

NSN

5961-01-539-9920

MFG

HEWLETT PACKARD CO

Description

CAPACITANCE RATING IN PICOFARADS: 1.2 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: LOW NOISE
III END ITEM IDENTIFICATION: GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT; 29471(51190), TEST SET, RADIO
III PART NAME ASSIGNED BY CONTROLLING AGENCY: AGILENT HSMS-281X SURFACE MOUNT RF SCHOTTKY BARRIER DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.8 MILLIMETERS MINIMUM AND 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.8 MILLIMETERS MINIMUM AND 3.1 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.1 MILLIMETERS MINIMUM AND 2.7 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LEAD FREE; LOW FLICKER NOISE; UNCONNECTED PAIR
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.4 MAXIMUM FORWARD VOLTAGE, DC

HSMS-2815-TR1G

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015399920

NSN

5961-01-539-9920

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HSMS-2815-TR1G

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015399920

NSN

5961-01-539-9920

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CAPACITANCE RATING IN PICOFARADS: 1.2 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: LOW NOISE
III END ITEM IDENTIFICATION: GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT; 29471(51190), TEST SET, RADIO
III PART NAME ASSIGNED BY CONTROLLING AGENCY: AGILENT HSMS-281X SURFACE MOUNT RF SCHOTTKY BARRIER DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.8 MILLIMETERS MINIMUM AND 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.8 MILLIMETERS MINIMUM AND 3.1 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.1 MILLIMETERS MINIMUM AND 2.7 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LEAD FREE; LOW FLICKER NOISE; UNCONNECTED PAIR
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.4 MAXIMUM FORWARD VOLTAGE, DC

PIF01550

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961015399928

NSN

5961-01-539-9928

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PIF01550

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961015399928

NSN

5961-01-539-9928

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

III END ITEM IDENTIFICATION: OH-58D KIOWA WARRIOR HELICOPTER
III SUPPLEMENTARY FEATURES: NEXT HIGHER ASSEMBLY, NAVIGATIONAL LIGHT 6220-00-179-5106
SPECIAL FEATURES: NEXT HIGHER ASSEMBLY,NAVIGATIONAL LIGHT 6220-00-179-5106

1.5KE82

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015400258

NSN

5961-01-540-0258

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1.5KE82

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015400258

NSN

5961-01-540-0258

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

CURRENT RATING PER CHARACTERISTIC: 12.70 AMPERES MAXIMUM PEAK PULSE CURRENT AND 1.00 MILLIAMPERES MAXIMUM BREAKOVER CURRENT, DC
III END ITEM IDENTIFICATION: F-16 AIRCRAFT;TO 4BA8-45-1 TABLE 7-2 REF CR36
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSIENT VOLTAGE SUPPRESSOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.360 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.0 WATTS MAXIMUM PEAK ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.040 INCHES NOMINAL
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 118.0 MAXIMUM LIMITING VOLTAGE AND 90.2 MAXIMUM BREAKDOWN VOLTAGE, DC AND 73.8 MINIMUM BREAKDOWN VOLTAGE, DC

1N6293A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015400258

NSN

5961-01-540-0258

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1N6293A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015400258

NSN

5961-01-540-0258

MFG

SILICONIX INCORPORATED D IV SILICONIX

Description

CURRENT RATING PER CHARACTERISTIC: 12.70 AMPERES MAXIMUM PEAK PULSE CURRENT AND 1.00 MILLIAMPERES MAXIMUM BREAKOVER CURRENT, DC
III END ITEM IDENTIFICATION: F-16 AIRCRAFT;TO 4BA8-45-1 TABLE 7-2 REF CR36
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSIENT VOLTAGE SUPPRESSOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.360 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.0 WATTS MAXIMUM PEAK ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.040 INCHES NOMINAL
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 118.0 MAXIMUM LIMITING VOLTAGE AND 90.2 MAXIMUM BREAKDOWN VOLTAGE, DC AND 73.8 MINIMUM BREAKDOWN VOLTAGE, DC

100H208PC65

TRANSISTOR,SPECIAL

NSN, MFG P/N

5961015400796

NSN

5961-01-540-0796

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100H208PC65

TRANSISTOR,SPECIAL

NSN, MFG P/N

5961015400796

NSN

5961-01-540-0796

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ES POWER CONTROL SYSTEMS

Description

CRITICALITY CODE JUSTIFICATION: ZZZW
DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATION
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6895
SPEC/STD CONTROLLING DATA:

JANTX2N6895

TRANSISTOR,SPECIAL

NSN, MFG P/N

5961015400796

NSN

5961-01-540-0796

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JANTX2N6895

TRANSISTOR,SPECIAL

NSN, MFG P/N

5961015400796

NSN

5961-01-540-0796

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CRITICALITY CODE JUSTIFICATION: ZZZW
DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATION
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6895
SPEC/STD CONTROLLING DATA:

LAB03

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015400919

NSN

5961-01-540-0919

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LAB03

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015400919

NSN

5961-01-540-0919

MFG

U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION

Description

III END ITEM IDENTIFICATION: TERMINAL DOPPLER WEATHER RADAR (TDWR)
PART NAME ASSIGNED BY CONTROLLING AGENCY: LASER DIODE BRACKET

4870

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015402386

NSN

5961-01-540-2386

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4870

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015402386

NSN

5961-01-540-2386

MFG

AAVID THERMALLOY LLC

Description

III END ITEM IDENTIFICATION: PHOTONICS MAST, WORKSTATION
PART NAME ASSIGNED BY CONTROLLING AGENCY: D0-5 MOUNTING KIT

48-11034D01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015403275

NSN

5961-01-540-3275

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48-11034D01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015403275

NSN

5961-01-540-3275

MFG

MOTOROLA INC. DIV U.S. FEDERAL GOVERNMENT MARKETS DIVISION