My Quote Request
5961-01-503-9418
20 Products
MMSZ-5230-B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015039418
NSN
5961-01-503-9418
MMSZ-5230-B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015039418
NSN
5961-01-503-9418
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: 2320-01-494-7606
Related Searches:
770435
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015040441
NSN
5961-01-504-0441
770435
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015040441
NSN
5961-01-504-0441
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
MBR20035CT
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015040719
NSN
5961-01-504-0719
MBR20035CT
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015040719
NSN
5961-01-504-0719
MFG
FREESCALE SEMICONDUCTOR INC.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES FORWARD CURRENT, TOTAL RMS
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
DESIGN CONTROL REFERENCE: MBR20035CT
III END ITEM IDENTIFICATION: WLM ENG CTL CONSOLE P/N 4405A1000-1 ABOARD 175 FT WLM COAST GUARD VESSELS
MANUFACTURERS CODE: 04713
OPERATING TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
THE MANUFACTURERS DATA:
Related Searches:
BAS31
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015041778
NSN
5961-01-504-1778
MFG
PHILIPS SEMICONDUCTORS INC
Description
INCLOSURE MATERIAL: PLASTIC
OVERALL HEIGHT: 0.9 MILLIMETERS MINIMUM AND 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.8 MILLIMETERS MINIMUM AND 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.9 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
Related Searches:
928193
TRANSISTOR
NSN, MFG P/N
5961015042806
NSN
5961-01-504-2806
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 1.20 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: SWITCHING
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTORS-SWITCHING,NPN,SILICON
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SUBMITTED NAME TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VO
Related Searches:
SCA16022
TRANSISTOR
NSN, MFG P/N
5961015042806
NSN
5961-01-504-2806
MFG
SEMICOA DBA SEMICOA SEMI CONDUCTORS
Description
CURRENT RATING PER CHARACTERISTIC: 1.20 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: SWITCHING
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTORS-SWITCHING,NPN,SILICON
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SUBMITTED NAME TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VO
Related Searches:
SFT193-2
TRANSISTOR
NSN, MFG P/N
5961015042806
NSN
5961-01-504-2806
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.20 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: SWITCHING
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTORS-SWITCHING,NPN,SILICON
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SUBMITTED NAME TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VO
Related Searches:
JANTX1N6485US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015043006
NSN
5961-01-504-3006
JANTX1N6485US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015043006
NSN
5961-01-504-3006
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 4.20 AMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6485US
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR REGULATOR DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.091 INCHES MINIMUM AND 0.103 INCHES MAXIMUM
OVERALL LENGTH: 0.168 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.625 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.46 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
RE58515
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015044119
NSN
5961-01-504-4119
MFG
DEERE & COMPANY DBA JOHN DEERE DIV WORLDWIDE LOGISTICS
Description
III END ITEM IDENTIFICATION: USED ON JOHN DEERE SERIES 2450 GENSET POWER UNITS, SKID STEER LOADERS, TELESCOPIC HANDLERS, ETC
Related Searches:
521-0007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015045098
NSN
5961-01-504-5098
MFG
KEPCO INC.
Description
III END ITEM IDENTIFICATION: SATCOM PHASE 111
Related Searches:
521-0013
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015045099
NSN
5961-01-504-5099
MFG
KEPCO INC.
Description
III END ITEM IDENTIFICATION: SATCOM PHASE 111
Related Searches:
521-0028
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015045101
NSN
5961-01-504-5101
MFG
KEPCO INC.
Description
III END ITEM IDENTIFICATION: SATCOM PHASE 111
Related Searches:
521-0033
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015045102
NSN
5961-01-504-5102
MFG
KEPCO INC.
Description
III END ITEM IDENTIFICATION: SATCOM PHASE 111
Related Searches:
BFR16
TRANSISTOR
NSN, MFG P/N
5961015045111
NSN
5961-01-504-5111
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SMALL SIGNAL TRANSISTORS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
SPECIAL FEATURES: NPN LOW NOISE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MINIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
2933067-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015045259
NSN
5961-01-504-5259
2933067-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015045259
NSN
5961-01-504-5259
MFG
PARKER HANNIFIN CORPORATION DIV AEROSPACE GROUP HEADQUARTERS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
5KP70A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015045259
NSN
5961-01-504-5259
MFG
MICROSEMI CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
FEPF16DT
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015045518
NSN
5961-01-504-5518
FEPF16DT
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015045518
NSN
5961-01-504-5518
MFG
GENERAL SEMICONDUCTOR INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE
MATERIAL: PLASTIC EPOXY
MOUNTING METHOD: CLIP
SPECIAL FEATURES: DUAL ULTRAFAST PLASTIC RECTIFIER
TERMINAL TYPE AND QUANTITY: 3 PIN
Related Searches:
2SC2429
TRANSISTOR
NSN, MFG P/N
5961015045550
NSN
5961-01-504-5550
MFG
FUJITSU MICROELECTRONICS INC.
Description
TRANSISTOR
Related Searches:
F1016
TRANSISTOR
NSN, MFG P/N
5961015045564
NSN
5961-01-504-5564
MFG
R F POLYFET DEVICES INC
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: BRACKET
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.744 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
JANTX1N4370CUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015046446
NSN
5961-01-504-6446
JANTX1N4370CUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015046446
NSN
5961-01-504-6446
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 155.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4370CUR-1
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: AN/ALQ172LRU
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICE,DIODE,SILICON,VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/127
OVERALL DIAMETER: 0.063 INCHES MINIMUM AND 0.067 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SURFACE MOUNT ROUND END CAP DIODE
TERMINAL CIRCLE DIAMETER: 0.063 INCHES MINIMUM AND 0.067 INCHES MAXIMUM
TERMINAL LENGTH: 0.016 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT