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5961-01-503-9418

20 Products

MMSZ-5230-B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015039418

NSN

5961-01-503-9418

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MMSZ-5230-B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015039418

NSN

5961-01-503-9418

MFG

FREESCALE SEMICONDUCTOR INC.

770435

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015040441

NSN

5961-01-504-0441

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770435

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015040441

NSN

5961-01-504-0441

MFG

HAMILTON SUNDSTRAND CORPORATION

MBR20035CT

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961015040719

NSN

5961-01-504-0719

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MBR20035CT

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961015040719

NSN

5961-01-504-0719

MFG

FREESCALE SEMICONDUCTOR INC.

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES FORWARD CURRENT, TOTAL RMS
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
DESIGN CONTROL REFERENCE: MBR20035CT
III END ITEM IDENTIFICATION: WLM ENG CTL CONSOLE P/N 4405A1000-1 ABOARD 175 FT WLM COAST GUARD VESSELS
MANUFACTURERS CODE: 04713
OPERATING TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
THE MANUFACTURERS DATA:

BAS31

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015041778

NSN

5961-01-504-1778

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BAS31

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015041778

NSN

5961-01-504-1778

MFG

PHILIPS SEMICONDUCTORS INC

Description

INCLOSURE MATERIAL: PLASTIC
OVERALL HEIGHT: 0.9 MILLIMETERS MINIMUM AND 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.8 MILLIMETERS MINIMUM AND 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.9 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN

928193

TRANSISTOR

NSN, MFG P/N

5961015042806

NSN

5961-01-504-2806

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928193

TRANSISTOR

NSN, MFG P/N

5961015042806

NSN

5961-01-504-2806

MFG

RAYTHEON COMPANY

Description

CURRENT RATING PER CHARACTERISTIC: 1.20 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: SWITCHING
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTORS-SWITCHING,NPN,SILICON
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SUBMITTED NAME TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VO

SCA16022

TRANSISTOR

NSN, MFG P/N

5961015042806

NSN

5961-01-504-2806

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SCA16022

TRANSISTOR

NSN, MFG P/N

5961015042806

NSN

5961-01-504-2806

MFG

SEMICOA DBA SEMICOA SEMI CONDUCTORS

Description

CURRENT RATING PER CHARACTERISTIC: 1.20 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: SWITCHING
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTORS-SWITCHING,NPN,SILICON
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SUBMITTED NAME TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VO

SFT193-2

TRANSISTOR

NSN, MFG P/N

5961015042806

NSN

5961-01-504-2806

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SFT193-2

TRANSISTOR

NSN, MFG P/N

5961015042806

NSN

5961-01-504-2806

MFG

SOLID STATE DEVICES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 1.20 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: SWITCHING
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTORS-SWITCHING,NPN,SILICON
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SUBMITTED NAME TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VO

JANTX1N6485US

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015043006

NSN

5961-01-504-3006

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JANTX1N6485US

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015043006

NSN

5961-01-504-3006

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 4.20 AMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6485US
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR REGULATOR DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.091 INCHES MINIMUM AND 0.103 INCHES MAXIMUM
OVERALL LENGTH: 0.168 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.625 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.46 MAXIMUM NOMINAL REGULATOR VOLTAGE

RE58515

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015044119

NSN

5961-01-504-4119

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RE58515

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015044119

NSN

5961-01-504-4119

MFG

DEERE & COMPANY DBA JOHN DEERE DIV WORLDWIDE LOGISTICS

Description

III END ITEM IDENTIFICATION: USED ON JOHN DEERE SERIES 2450 GENSET POWER UNITS, SKID STEER LOADERS, TELESCOPIC HANDLERS, ETC

521-0007

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015045098

NSN

5961-01-504-5098

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521-0007

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015045098

NSN

5961-01-504-5098

MFG

KEPCO INC.

521-0013

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015045099

NSN

5961-01-504-5099

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521-0013

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015045099

NSN

5961-01-504-5099

MFG

KEPCO INC.

521-0028

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015045101

NSN

5961-01-504-5101

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521-0028

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015045101

NSN

5961-01-504-5101

MFG

KEPCO INC.

521-0033

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015045102

NSN

5961-01-504-5102

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521-0033

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015045102

NSN

5961-01-504-5102

MFG

KEPCO INC.

BFR16

TRANSISTOR

NSN, MFG P/N

5961015045111

NSN

5961-01-504-5111

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BFR16

TRANSISTOR

NSN, MFG P/N

5961015045111

NSN

5961-01-504-5111

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

III PART NAME ASSIGNED BY CONTROLLING AGENCY: SMALL SIGNAL TRANSISTORS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
SPECIAL FEATURES: NPN LOW NOISE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MINIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN

2933067-101

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015045259

NSN

5961-01-504-5259

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2933067-101

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015045259

NSN

5961-01-504-5259

MFG

PARKER HANNIFIN CORPORATION DIV AEROSPACE GROUP HEADQUARTERS

5KP70A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015045259

NSN

5961-01-504-5259

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5KP70A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015045259

NSN

5961-01-504-5259

MFG

MICROSEMI CORPORATION

FEPF16DT

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015045518

NSN

5961-01-504-5518

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FEPF16DT

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015045518

NSN

5961-01-504-5518

MFG

GENERAL SEMICONDUCTOR INC

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE
MATERIAL: PLASTIC EPOXY
MOUNTING METHOD: CLIP
SPECIAL FEATURES: DUAL ULTRAFAST PLASTIC RECTIFIER
TERMINAL TYPE AND QUANTITY: 3 PIN

2SC2429

TRANSISTOR

NSN, MFG P/N

5961015045550

NSN

5961-01-504-5550

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2SC2429

TRANSISTOR

NSN, MFG P/N

5961015045550

NSN

5961-01-504-5550

MFG

FUJITSU MICROELECTRONICS INC.

F1016

TRANSISTOR

NSN, MFG P/N

5961015045564

NSN

5961-01-504-5564

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F1016

TRANSISTOR

NSN, MFG P/N

5961015045564

NSN

5961-01-504-5564

MFG

R F POLYFET DEVICES INC

Description

CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: BRACKET
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.744 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM DRAIN TO GATE VOLTAGE

JANTX1N4370CUR-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015046446

NSN

5961-01-504-6446

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JANTX1N4370CUR-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015046446

NSN

5961-01-504-6446

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 155.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4370CUR-1
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: AN/ALQ172LRU
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICE,DIODE,SILICON,VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/127
OVERALL DIAMETER: 0.063 INCHES MINIMUM AND 0.067 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SURFACE MOUNT ROUND END CAP DIODE
TERMINAL CIRCLE DIAMETER: 0.063 INCHES MINIMUM AND 0.067 INCHES MAXIMUM
TERMINAL LENGTH: 0.016 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT