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5961-01-463-3743
20 Products
ND587T-3B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014633743
NSN
5961-01-463-3743
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
CAPACITANCE RATING IN PICOFARADS: 0.2 MINIMUM AND 0.3 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MINIMUM FORWARD CURRENT, DC AND 150.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.350 MILLIMETERS MAXIMUM
OVERALL LENGTH: 5.500 MILLIMETERS MAXIMUM
OVERALL WIDTH: 9.500 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS AND 4.4 MAXIMUM REVERSE VOLTAGE, PEAK AND 0.67 MINIMUM FORWARD VOLTAGE, DC AND 1.00 MAXIMUM FORWARD VOLTAGE, DC
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129462PC57
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014632898
NSN
5961-01-463-2898
129462PC57
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014632898
NSN
5961-01-463-2898
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4942
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT, MECHANICSBURG, ACTIVITY HX QUALITY CONTROL MANUFACTURING AND TESTING SPECIFICATIONS
Related Searches:
JANTX1N4942
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014632898
NSN
5961-01-463-2898
JANTX1N4942
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014632898
NSN
5961-01-463-2898
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4942
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT, MECHANICSBURG, ACTIVITY HX QUALITY CONTROL MANUFACTURING AND TESTING SPECIFICATIONS
Related Searches:
JANTX2N2222AUA
TRANSISTOR
NSN, MFG P/N
5961014633070
NSN
5961-01-463-3070
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N2222AUA
III END ITEM IDENTIFICATION: 1270011422855E/IFSCM04939
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/255
OVERALL HEIGHT: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.225 INCHES MAXIMUM
OVERALL WIDTH: 0.155 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 650.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 4 CASE
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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SDH5KS
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014633089
NSN
5961-01-463-3089
MFG
RICHARDSON ELECTRONICS LTD.
Description
III END ITEM IDENTIFICATION: MALSR
SPECIAL FEATURES: H.V., 3K;3A2A2CR1, TI 6850.38, INSTRUCTION BOOK MALSR, PG 8-30, SEPCO DIVISION
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VC30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014633089
NSN
5961-01-463-3089
MFG
L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION
Description
III END ITEM IDENTIFICATION: MALSR
SPECIAL FEATURES: H.V., 3K;3A2A2CR1, TI 6850.38, INSTRUCTION BOOK MALSR, PG 8-30, SEPCO DIVISION
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JANTX2N6989U
TRANSISTOR
NSN, MFG P/N
5961014633139
NSN
5961-01-463-3139
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6989U
III END ITEM IDENTIFICATION: 1270011422855E/IFSCM04939
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 14
MOUNTING METHOD: PRESS FIT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/559
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.400 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON ALLOY
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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RD11MB3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014633203
NSN
5961-01-463-3203
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.900 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.2 MAXIMUM REGULATOR VOLTAGE, DC AND 10.7 MINIMUM REGULATOR VOLTAGE, DC
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301209-001
TRANSISTOR
NSN, MFG P/N
5961014633394
NSN
5961-01-463-3394
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: RSIPPPLE/IFSCM97942
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: THREADED STUD
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS AND 60.0 WATTS MINIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON ALLOY
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 500.0 MAXIMUM DRAIN TO GATE VOLTAGE
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FRM450D2S2448
TRANSISTOR
NSN, MFG P/N
5961014633394
NSN
5961-01-463-3394
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: RSIPPPLE/IFSCM97942
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: THREADED STUD
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS AND 60.0 WATTS MINIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON ALLOY
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 500.0 MAXIMUM DRAIN TO GATE VOLTAGE
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301649-001
TRANSISTOR
NSN, MFG P/N
5961014633414
NSN
5961-01-463-3414
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 23.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: RSIPPPLE/IFSCM97942
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.550 MILLIMETERS MAXIMUM
OVERALL WIDTH: 0.545 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS AND 50.0 WATTS MINIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON ALLOY
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 200.0 MAXIMUM DRAIN TO GATE VOLTAGE
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FRF250D2S2447
TRANSISTOR
NSN, MFG P/N
5961014633414
NSN
5961-01-463-3414
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 23.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: RSIPPPLE/IFSCM97942
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.550 MILLIMETERS MAXIMUM
OVERALL WIDTH: 0.545 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS AND 50.0 WATTS MINIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON ALLOY
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 200.0 MAXIMUM DRAIN TO GATE VOLTAGE
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RD6.2MB2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014633506
NSN
5961-01-463-3506
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM PEAK POINT CURRENT
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.900 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.800 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.3 MAXIMUM ON-STATE VOLTAGE, DC
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1A21106H01
TRANSISTOR
NSN, MFG P/N
5961014633576
NSN
5961-01-463-3576
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: RSIPPPLE/IFSCM97942
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.050 MILLIMETERS MAXIMUM
OVERALL WIDTH: 4.074 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON ALLOY
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
NE24283A
TRANSISTOR
NSN, MFG P/N
5961014633576
NSN
5961-01-463-3576
MFG
CALIFORNIA EASTERN LABS
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: RSIPPPLE/IFSCM97942
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.050 MILLIMETERS MAXIMUM
OVERALL WIDTH: 4.074 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON ALLOY
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
560R299H01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014633658
NSN
5961-01-463-3658
560R299H01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014633658
NSN
5961-01-463-3658
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
III END ITEM IDENTIFICATION: RSIPPPLE/IFSCM97942
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 100.0 DEG CELSIUS CASE
MOUNTING METHOD: COMPRESSION
OVERALL LENGTH: 2.160 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.004 MILLIMETERS MAXIMUM
TERMINAL LENGTH: 0.160 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC AND 0.4 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
1SV210
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014633681
NSN
5961-01-463-3681
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 125.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: COMPRESSION
OVERALL HEIGHT: 1.250 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.700 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.700 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.004 MILLIMETERS MAXIMUM
TERMINAL LENGTH: 0.160 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MINIMUM REVERSE VOLTAGE, INSTANTANEOUS
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129462PC56
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961014633684
NSN
5961-01-463-3684
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD
Description
(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP MECH; ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS.
CRITICALITY CODE JUSTIFICATION: ZZZW
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4307M
SPEC/STD CONTROLLING DATA:
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6N36PC31
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961014633684
NSN
5961-01-463-3684
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP MECH; ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS.
CRITICALITY CODE JUSTIFICATION: ZZZW
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4307M
SPEC/STD CONTROLLING DATA:
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JANTX1N4307M
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961014633684
NSN
5961-01-463-3684
JANTX1N4307M
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961014633684
NSN
5961-01-463-3684
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP MECH; ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS.
CRITICALITY CODE JUSTIFICATION: ZZZW
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4307M
SPEC/STD CONTROLLING DATA:
