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5961-01-463-3743

20 Products

ND587T-3B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014633743

NSN

5961-01-463-3743

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ND587T-3B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014633743

NSN

5961-01-463-3743

MFG

NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV

Description

CAPACITANCE RATING IN PICOFARADS: 0.2 MINIMUM AND 0.3 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MINIMUM FORWARD CURRENT, DC AND 150.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.350 MILLIMETERS MAXIMUM
OVERALL LENGTH: 5.500 MILLIMETERS MAXIMUM
OVERALL WIDTH: 9.500 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS AND 4.4 MAXIMUM REVERSE VOLTAGE, PEAK AND 0.67 MINIMUM FORWARD VOLTAGE, DC AND 1.00 MAXIMUM FORWARD VOLTAGE, DC

129462PC57

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014632898

NSN

5961-01-463-2898

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129462PC57

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014632898

NSN

5961-01-463-2898

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD

Description

CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4942
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT, MECHANICSBURG, ACTIVITY HX QUALITY CONTROL MANUFACTURING AND TESTING SPECIFICATIONS

JANTX1N4942

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014632898

NSN

5961-01-463-2898

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JANTX1N4942

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014632898

NSN

5961-01-463-2898

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4942
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT, MECHANICSBURG, ACTIVITY HX QUALITY CONTROL MANUFACTURING AND TESTING SPECIFICATIONS

JANTX2N2222AUA

TRANSISTOR

NSN, MFG P/N

5961014633070

NSN

5961-01-463-3070

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JANTX2N2222AUA

TRANSISTOR

NSN, MFG P/N

5961014633070

NSN

5961-01-463-3070

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N2222AUA
III END ITEM IDENTIFICATION: 1270011422855E/IFSCM04939
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/255
OVERALL HEIGHT: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.225 INCHES MAXIMUM
OVERALL WIDTH: 0.155 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 650.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 4 CASE
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

SDH5KS

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014633089

NSN

5961-01-463-3089

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SDH5KS

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014633089

NSN

5961-01-463-3089

MFG

RICHARDSON ELECTRONICS LTD.

Description

III END ITEM IDENTIFICATION: MALSR
SPECIAL FEATURES: H.V., 3K;3A2A2CR1, TI 6850.38, INSTRUCTION BOOK MALSR, PG 8-30, SEPCO DIVISION

VC30

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014633089

NSN

5961-01-463-3089

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VC30

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014633089

NSN

5961-01-463-3089

MFG

L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION

Description

III END ITEM IDENTIFICATION: MALSR
SPECIAL FEATURES: H.V., 3K;3A2A2CR1, TI 6850.38, INSTRUCTION BOOK MALSR, PG 8-30, SEPCO DIVISION

JANTX2N6989U

TRANSISTOR

NSN, MFG P/N

5961014633139

NSN

5961-01-463-3139

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JANTX2N6989U

TRANSISTOR

NSN, MFG P/N

5961014633139

NSN

5961-01-463-3139

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6989U
III END ITEM IDENTIFICATION: 1270011422855E/IFSCM04939
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 14
MOUNTING METHOD: PRESS FIT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/559
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.400 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON ALLOY
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

RD11MB3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014633203

NSN

5961-01-463-3203

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RD11MB3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014633203

NSN

5961-01-463-3203

MFG

NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV

Description

III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.900 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.2 MAXIMUM REGULATOR VOLTAGE, DC AND 10.7 MINIMUM REGULATOR VOLTAGE, DC

301209-001

TRANSISTOR

NSN, MFG P/N

5961014633394

NSN

5961-01-463-3394

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301209-001

TRANSISTOR

NSN, MFG P/N

5961014633394

NSN

5961-01-463-3394

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: RSIPPPLE/IFSCM97942
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: THREADED STUD
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS AND 60.0 WATTS MINIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON ALLOY
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 500.0 MAXIMUM DRAIN TO GATE VOLTAGE

FRM450D2S2448

TRANSISTOR

NSN, MFG P/N

5961014633394

NSN

5961-01-463-3394

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FRM450D2S2448

TRANSISTOR

NSN, MFG P/N

5961014633394

NSN

5961-01-463-3394

MFG

INTERSIL CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: RSIPPPLE/IFSCM97942
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: THREADED STUD
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS AND 60.0 WATTS MINIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON ALLOY
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 500.0 MAXIMUM DRAIN TO GATE VOLTAGE

301649-001

TRANSISTOR

NSN, MFG P/N

5961014633414

NSN

5961-01-463-3414

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301649-001

TRANSISTOR

NSN, MFG P/N

5961014633414

NSN

5961-01-463-3414

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 23.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: RSIPPPLE/IFSCM97942
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.550 MILLIMETERS MAXIMUM
OVERALL WIDTH: 0.545 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS AND 50.0 WATTS MINIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON ALLOY
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 200.0 MAXIMUM DRAIN TO GATE VOLTAGE

FRF250D2S2447

TRANSISTOR

NSN, MFG P/N

5961014633414

NSN

5961-01-463-3414

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FRF250D2S2447

TRANSISTOR

NSN, MFG P/N

5961014633414

NSN

5961-01-463-3414

MFG

INTERSIL CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 23.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: RSIPPPLE/IFSCM97942
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.550 MILLIMETERS MAXIMUM
OVERALL WIDTH: 0.545 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS AND 50.0 WATTS MINIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON ALLOY
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 200.0 MAXIMUM DRAIN TO GATE VOLTAGE

RD6.2MB2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014633506

NSN

5961-01-463-3506

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RD6.2MB2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014633506

NSN

5961-01-463-3506

MFG

NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM PEAK POINT CURRENT
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.900 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.800 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.3 MAXIMUM ON-STATE VOLTAGE, DC

1A21106H01

TRANSISTOR

NSN, MFG P/N

5961014633576

NSN

5961-01-463-3576

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1A21106H01

TRANSISTOR

NSN, MFG P/N

5961014633576

NSN

5961-01-463-3576

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: RSIPPPLE/IFSCM97942
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.050 MILLIMETERS MAXIMUM
OVERALL WIDTH: 4.074 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON ALLOY
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MAXIMUM DRAIN TO SOURCE VOLTAGE

NE24283A

TRANSISTOR

NSN, MFG P/N

5961014633576

NSN

5961-01-463-3576

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NE24283A

TRANSISTOR

NSN, MFG P/N

5961014633576

NSN

5961-01-463-3576

MFG

CALIFORNIA EASTERN LABS

Description

CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: RSIPPPLE/IFSCM97942
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.050 MILLIMETERS MAXIMUM
OVERALL WIDTH: 4.074 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON ALLOY
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MAXIMUM DRAIN TO SOURCE VOLTAGE

560R299H01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014633658

NSN

5961-01-463-3658

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560R299H01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014633658

NSN

5961-01-463-3658

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
III END ITEM IDENTIFICATION: RSIPPPLE/IFSCM97942
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 100.0 DEG CELSIUS CASE
MOUNTING METHOD: COMPRESSION
OVERALL LENGTH: 2.160 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.004 MILLIMETERS MAXIMUM
TERMINAL LENGTH: 0.160 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC AND 0.4 MAXIMUM FORWARD VOLTAGE, DC

1SV210

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014633681

NSN

5961-01-463-3681

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1SV210

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014633681

NSN

5961-01-463-3681

MFG

NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 125.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: COMPRESSION
OVERALL HEIGHT: 1.250 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.700 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.700 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.004 MILLIMETERS MAXIMUM
TERMINAL LENGTH: 0.160 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MINIMUM REVERSE VOLTAGE, INSTANTANEOUS

129462PC56

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961014633684

NSN

5961-01-463-3684

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129462PC56

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961014633684

NSN

5961-01-463-3684

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD

Description

(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP MECH; ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS.
CRITICALITY CODE JUSTIFICATION: ZZZW
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4307M
SPEC/STD CONTROLLING DATA:

6N36PC31

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961014633684

NSN

5961-01-463-3684

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6N36PC31

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961014633684

NSN

5961-01-463-3684

MFG

DRS POWER & CONTROL TECHNOLOGIES INC.

Description

(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP MECH; ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS.
CRITICALITY CODE JUSTIFICATION: ZZZW
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4307M
SPEC/STD CONTROLLING DATA:

JANTX1N4307M

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961014633684

NSN

5961-01-463-3684

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JANTX1N4307M

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961014633684

NSN

5961-01-463-3684

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP MECH; ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS.
CRITICALITY CODE JUSTIFICATION: ZZZW
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4307M
SPEC/STD CONTROLLING DATA: