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5961-01-373-1112
20 Products
HLMP3750-OPT009
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013731112
NSN
5961-01-373-1112
HLMP3750-OPT009
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013731112
NSN
5961-01-373-1112
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
ACCOMMODATED ITEM SECURING DEVICE TYPE: RETAINING CLIP
MATERIAL: PLASTIC
MOUNTING FACILITY TYPE AND QUANTITY: 1 CLIP SINGLE MOUNTING FACILITY
OVERALL DIAMETER: 9.530 INCHES NOMINAL
OVERALL LENGTH: 3.810 INCHES NOMINAL
STYLE DESIGNATOR: 3C CYLINDRICAL
Related Searches:
1854-0968
TRANSISTOR
NSN, MFG P/N
5961013731199
NSN
5961-01-373-1199
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: UNTHREADED HOLE
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
LT1839H
TRANSISTOR
NSN, MFG P/N
5961013731807
NSN
5961-01-373-1807
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
INTERNAL CONFIGURATION: JUNCTION CONTACT
POWER RATING PER CHARACTERISTIC: 3.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
12111402 ITEM 2 2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013731808
NSN
5961-01-373-1808
12111402 ITEM 2 2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013731808
NSN
5961-01-373-1808
MFG
JERED LLC
Description
III END ITEM IDENTIFICATION: FFG GUIDED MISSILE FRIGATE
Related Searches:
12111402 ITEM 22
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013731808
NSN
5961-01-373-1808
12111402 ITEM 22
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013731808
NSN
5961-01-373-1808
MFG
UNIDYNAMICS/SAINT LOUIS INC CONROE OPNS
Description
III END ITEM IDENTIFICATION: FFG GUIDED MISSILE FRIGATE
Related Searches:
A14E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013731808
NSN
5961-01-373-1808
MFG
SEMICONDUCTOR SPECIALISTS INC
Description
III END ITEM IDENTIFICATION: FFG GUIDED MISSILE FRIGATE
Related Searches:
J94-0210
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013732819
NSN
5961-01-373-2819
J94-0210
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013732819
NSN
5961-01-373-2819
MFG
WARD LEONARD ELECTRIC CO INC
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
HSMS-2805-T30
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013732820
NSN
5961-01-373-2820
HSMS-2805-T30
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013732820
NSN
5961-01-373-2820
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 BREAKDOWN VOLTAGE, DC AND 410.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.850 INCHES MINIMUM AND 1.200 INCHES MAXIMUM
OVERALL LENGTH: 2.800 INCHES MINIMUM AND 3.060 INCHES MAXIMUM
OVERALL WIDTH: 0.210 INCHES MINIMUM AND 2.650 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
B4042161-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013732847
NSN
5961-01-373-2847
B4042161-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013732847
NSN
5961-01-373-2847
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
III END ITEM IDENTIFICATION: SINCGARS EQUIPMENT
Related Searches:
6855K90P004
TRANSISTOR
NSN, MFG P/N
5961013733739
NSN
5961-01-373-3739
MFG
AMETEK INC. D IV AEROSPACE & DEFENSE
Description
TRANSISTOR
Related Searches:
A187813
RECTIFIER,SPECIAL
NSN, MFG P/N
5961013734543
NSN
5961-01-373-4543
MFG
CNH AMERICA LLC
Description
III END ITEM IDENTIFICATION: WHLD EARTHMOVING TRACTOR
Related Searches:
75Z578D2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013736046
NSN
5961-01-373-6046
75Z578D2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013736046
NSN
5961-01-373-6046
MFG
ABB INDUSTRIAL SYSTEMS INC
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
2N7013
TRANSISTOR
NSN, MFG P/N
5961013736201
NSN
5961-01-373-6201
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
TRANSISTOR
Related Searches:
31DQ03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013736202
NSN
5961-01-373-6202
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BFT46TRL
TRANSISTOR
NSN, MFG P/N
5961013736452
NSN
5961-01-373-6452
MFG
PHILLIPS COMPONENTS INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL DRAIN CURRENT AND 5.00 MILLIAMPERES NOMINAL GATE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.100 INCHES MAXIMUM
OVERALL LENGTH: 2.800 INCHES MINIMUM AND 3.000 INCHES MAXIMUM
OVERALL WIDTH: 1.200 INCHES MINIMUM AND 1.400 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
SS-32577
TRANSISTOR
NSN, MFG P/N
5961013736452
NSN
5961-01-373-6452
MFG
THALES COMMUNICATIONS INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL DRAIN CURRENT AND 5.00 MILLIAMPERES NOMINAL GATE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.100 INCHES MAXIMUM
OVERALL LENGTH: 2.800 INCHES MINIMUM AND 3.000 INCHES MAXIMUM
OVERALL WIDTH: 1.200 INCHES MINIMUM AND 1.400 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
71HFR80
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013736894
NSN
5961-01-373-6894
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BFS17TRL
TRANSISTOR
NSN, MFG P/N
5961013737051
NSN
5961-01-373-7051
MFG
PHILLIPS COMPONENTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.100 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.8 MILLIMETERS MINIMUM AND 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.2 MILLIMETERS MINIMUM AND 1.4 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 150.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EM
Related Searches:
SS-32579
TRANSISTOR
NSN, MFG P/N
5961013737051
NSN
5961-01-373-7051
MFG
THALES COMMUNICATIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.100 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.8 MILLIMETERS MINIMUM AND 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.2 MILLIMETERS MINIMUM AND 1.4 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 150.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EM
Related Searches:
BFR92ATRL
TRANSISTOR
NSN, MFG P/N
5961013737052
NSN
5961-01-373-7052
MFG
PHILLIPS COMPONENTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.100 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.8 MILLIMETERS MINIMUM AND 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.2 MILLIMETERS MINIMUM AND 1.4 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.00 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 90.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BA
