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5961-01-364-1223
20 Products
SD211DE-2
TRANSISTOR
NSN, MFG P/N
5961013641223
NSN
5961-01-364-1223
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FUNCTION FOR WHICH DESIGNED: SWITCHING
III END ITEM IDENTIFICATION: RECEIVER
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM ON-STATE DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE AND 15.0 MAXIMUM SOURCE TO SUBSTRATE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
848274-1
TRANSISTOR
NSN, MFG P/N
5961013641223
NSN
5961-01-364-1223
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FUNCTION FOR WHICH DESIGNED: SWITCHING
III END ITEM IDENTIFICATION: RECEIVER
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM ON-STATE DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE AND 15.0 MAXIMUM SOURCE TO SUBSTRATE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
755002C7001-1
TRANSISTOR
NSN, MFG P/N
5961013641224
NSN
5961-01-364-1224
MFG
QUARTERMASTER GENERAL
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: -150.00 MICROAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE AND 20.00 MILLIAMPERES MINIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 60.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MINIMUM FORWARD GATE TO SOURCE BREAKDOWN VOLTAGE AND -1.0 MINIMUM GATE TO SOURCE CUTOFF VOLTAGE AND -6.0 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE
Related Searches:
FN4937
TRANSISTOR
NSN, MFG P/N
5961013641224
NSN
5961-01-364-1224
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: -150.00 MICROAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE AND 20.00 MILLIAMPERES MINIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 60.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MINIMUM FORWARD GATE TO SOURCE BREAKDOWN VOLTAGE AND -1.0 MINIMUM GATE TO SOURCE CUTOFF VOLTAGE AND -6.0 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE
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980709-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013641225
NSN
5961-01-364-1225
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: RADAR SET
INCLOSURE MATERIAL: CERAMIC OR GLASS
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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1929590
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013641226
NSN
5961-01-364-1226
MFG
OSHKOSH CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
755002A7702-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013641227
NSN
5961-01-364-1227
755002A7702-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013641227
NSN
5961-01-364-1227
MFG
QUARTERMASTER GENERAL
Description
CAPACITANCE RATING IN PICOFARADS: 0.4 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 87990-755002A7702 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
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QPND-4647
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013641227
NSN
5961-01-364-1227
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CAPACITANCE RATING IN PICOFARADS: 0.4 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 87990-755002A7702 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
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UM9719
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013641227
NSN
5961-01-364-1227
MFG
MICRO USPD INC
Description
CAPACITANCE RATING IN PICOFARADS: 0.4 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 87990-755002A7702 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
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932589-0001
TRANSISTOR
NSN, MFG P/N
5961013641980
NSN
5961-01-364-1980
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
TRANSISTOR
Related Searches:
94-7576
TRANSISTOR
NSN, MFG P/N
5961013641980
NSN
5961-01-364-1980
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
TRANSISTOR
Related Searches:
796889-1
TRANSISTOR
NSN, MFG P/N
5961013641981
NSN
5961-01-364-1981
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: ENVIRCONTSYST
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.050 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND -4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
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5082-6683
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013641982
NSN
5961-01-364-1982
MFG
HEWLETT-PACKARD CO VIDEO COMMUNICATION DIV
Description
CAPACITANCE RATING IN PICOFARADS: 1.2 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 100.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC AND 20.00 MILLIAMPERES MINIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.4 MAXIMUM FORWARD VOLTAGE, DC AND 15.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
845581-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013641982
NSN
5961-01-364-1982
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CAPACITANCE RATING IN PICOFARADS: 1.2 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 100.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC AND 20.00 MILLIAMPERES MINIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.4 MAXIMUM FORWARD VOLTAGE, DC AND 15.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
845581-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013641982
NSN
5961-01-364-1982
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CAPACITANCE RATING IN PICOFARADS: 1.2 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 100.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC AND 20.00 MILLIAMPERES MINIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.4 MAXIMUM FORWARD VOLTAGE, DC AND 15.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
A2X1378
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013641982
NSN
5961-01-364-1982
MFG
FEI MICROWAVE INC
Description
CAPACITANCE RATING IN PICOFARADS: 1.2 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 100.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC AND 20.00 MILLIAMPERES MINIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.4 MAXIMUM FORWARD VOLTAGE, DC AND 15.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
1884-0334
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013641983
NSN
5961-01-364-1983
1884-0334
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013641983
NSN
5961-01-364-1983
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL AND 370.00 AMPERES NOMINAL PEAK ON-STATE SURGE CURRENT
III END ITEM IDENTIFICATION: 6625-01-249-3366
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 1.197 INCHES NOMINAL
OVERALL LENGTH: 1.687 INCHES NOMINAL
OVERALL WIDTH: 0.875 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 40.0 WATTS NOMINAL PEAK GATE POWER DISSIPATION AND 1.0 WATTS NOMINAL AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.312 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
TODV 640
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013641983
NSN
5961-01-364-1983
TODV 640
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013641983
NSN
5961-01-364-1983
MFG
STMICROELECTRONICS INC
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL AND 370.00 AMPERES NOMINAL PEAK ON-STATE SURGE CURRENT
III END ITEM IDENTIFICATION: 6625-01-249-3366
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 1.197 INCHES NOMINAL
OVERALL LENGTH: 1.687 INCHES NOMINAL
OVERALL WIDTH: 0.875 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 40.0 WATTS NOMINAL PEAK GATE POWER DISSIPATION AND 1.0 WATTS NOMINAL AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.312 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
K5406020-011
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013642510
NSN
5961-01-364-2510
K5406020-011
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013642510
NSN
5961-01-364-2510
MFG
BOEING COMPANY THE DBA BOEING
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
048948-0001
TRANSISTOR
NSN, MFG P/N
5961013642648
NSN
5961-01-364-2648
MFG
THALES ATM INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: E3-HAVEQUIKAN
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.150 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.960 INCHES MINIMUM AND 0.990 INCHES MAXIMUM
OVERALL WIDTH: 0.720 INCHES MINIMUM AND 0.730 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 55.0 WATTS MAXIMUM ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 1.0 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE AND 6.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
