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5961-01-360-1253
20 Products
UES2605HR2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013601253
NSN
5961-01-360-1253
UES2605HR2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013601253
NSN
5961-01-360-1253
MFG
MICRO USPD INC
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR
Related Searches:
646514-904
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013601253
NSN
5961-01-360-1253
646514-904
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013601253
NSN
5961-01-360-1253
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR
Related Searches:
663-19245
TRANSISTOR
NSN, MFG P/N
5961013602082
NSN
5961-01-360-2082
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
08F-090
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013602251
NSN
5961-01-360-2251
MFG
RAPID POWER TECHNOLOGIES INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
109-113
TRANSISTOR
NSN, MFG P/N
5961013603216
NSN
5961-01-360-3216
MFG
RADIOSPARES SAS
Description
CURRENT RATING PER CHARACTERISTIC: -6.50 AMPERES MAXIMUM DRAIN CURRENT
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
14032673-9
TRANSISTOR
NSN, MFG P/N
5961013603216
NSN
5961-01-360-3216
MFG
SAGEM TELECOMMUNICATIONS
Description
CURRENT RATING PER CHARACTERISTIC: -6.50 AMPERES MAXIMUM DRAIN CURRENT
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
IRF9630
TRANSISTOR
NSN, MFG P/N
5961013603216
NSN
5961-01-360-3216
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: -6.50 AMPERES MAXIMUM DRAIN CURRENT
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
40-619-3179
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013603218
NSN
5961-01-360-3218
40-619-3179
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013603218
NSN
5961-01-360-3218
MFG
VIBRO-METER INC
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE - UNITED KINGDOM ROYAL AIR FORCE
III END ITEM IDENTIFICATION: HARRIER 2 GRS AV86 - MOD (AIR),RAGEN DATA SYSTEMS INC
Related Searches:
40-619-3178
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013603219
NSN
5961-01-360-3219
40-619-3178
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013603219
NSN
5961-01-360-3219
MFG
VIBRO-METER INC
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE - UNITED KINGDOM ROYAL AIR FORCE
III END ITEM IDENTIFICATION: HARRIER 2 GRS AV86 - MOD (AIR),RAGEN DATA SYSTEMS INC
Related Searches:
40-619-3180
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013603220
NSN
5961-01-360-3220
40-619-3180
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013603220
NSN
5961-01-360-3220
MFG
VIBRO-METER INC
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE - UNITED KINGDOM ROYAL AIR FORCE
III END ITEM IDENTIFICATION: HARRIER 2 GRS AV86 - MOD (AIR),RAGEN DATA SYSTEMS INC
Related Searches:
040-21461-62
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013604030
NSN
5961-01-360-4030
040-21461-62
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013604030
NSN
5961-01-360-4030
MFG
KATO ENGINEERING INC.
Description
MAJOR COMPONENTS: BRACKET 1; DIODE 6
Related Searches:
1N2928A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013604186
NSN
5961-01-360-4186
MFG
N A P SMD TECHNOLOGY INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MV209M2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013604188
NSN
5961-01-360-4188
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
3N213
TRANSISTOR
NSN, MFG P/N
5961013604389
NSN
5961-01-360-4389
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: ULTRA LOW POWER V/UHF RADIO TRANSCEIVER
Related Searches:
204-0020-012
TRANSISTOR
NSN, MFG P/N
5961013605145
NSN
5961-01-360-5145
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-46
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.75 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
SRF7073H
TRANSISTOR
NSN, MFG P/N
5961013605145
NSN
5961-01-360-5145
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-46
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.75 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
1853-0637
TRANSISTOR
NSN, MFG P/N
5961013605146
NSN
5961-01-360-5146
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: NIMITZ CLASS CVN, LOS ANGELES CLASS SSN (688), SEA WOLF CLASS SSN, OLIVER PERRY CLASS FFG, LANDING CRAFT AIR CUSHION (LCAC), TICONDEROGA CLASS CG (47), ARLEIGH BURKE CLASS DDG, FORRESTAL CLASS CV, SPRUANCE CLASS DD (963)
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 4.5 MILLIMETERS NOMINAL
OVERALL WIDTH: 4.0 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 219.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
MMBT4260
TRANSISTOR
NSN, MFG P/N
5961013605146
NSN
5961-01-360-5146
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: NIMITZ CLASS CVN, LOS ANGELES CLASS SSN (688), SEA WOLF CLASS SSN, OLIVER PERRY CLASS FFG, LANDING CRAFT AIR CUSHION (LCAC), TICONDEROGA CLASS CG (47), ARLEIGH BURKE CLASS DDG, FORRESTAL CLASS CV, SPRUANCE CLASS DD (963)
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 4.5 MILLIMETERS NOMINAL
OVERALL WIDTH: 4.0 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 219.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
25A55027
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013605148
NSN
5961-01-360-5148
25A55027
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013605148
NSN
5961-01-360-5148
MFG
CRITICAL POWER SYSTEMS INC. DBA COMPUPOWER SYSTEMS INC.
Description
FEATURES PROVIDED: W/HEAT SINK
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
25A55028
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013605149
NSN
5961-01-360-5149
25A55028
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013605149
NSN
5961-01-360-5149
MFG
CRITICAL POWER SYSTEMS INC. DBA COMPUPOWER SYSTEMS INC.
Description
FEATURES PROVIDED: W/HEAT SINK
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM FORWARD VOLTAGE, DC
