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5961-01-344-9714

20 Products

SS-10350-1

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961013449714

NSN

5961-01-344-9714

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SS-10350-1

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961013449714

NSN

5961-01-344-9714

MFG

BAE SYSTEMS INTEGRATED SYSTEM TECHNO LOGIES LTD

1582926-6

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013450096

NSN

5961-01-345-0096

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1582926-6

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013450096

NSN

5961-01-345-0096

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-TUCSON

10042148-112

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013450220

NSN

5961-01-345-0220

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10042148-112

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013450220

NSN

5961-01-345-0220

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS

Description

CURRENT RATING PER CHARACTERISTIC: 42.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5529B-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-14
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

CD333153

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013450220

NSN

5961-01-345-0220

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CD333153

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013450220

NSN

5961-01-345-0220

MFG

TELCOM SEMICONDUCTOR INC

Description

CURRENT RATING PER CHARACTERISTIC: 42.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5529B-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-14
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

JANTX1N5529B-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013450220

NSN

5961-01-345-0220

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JANTX1N5529B-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013450220

NSN

5961-01-345-0220

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 42.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5529B-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-14
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

1901-1149

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013451074

NSN

5961-01-345-1074

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1901-1149

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013451074

NSN

5961-01-345-1074

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CAPACITANCE RATING IN PICOFARADS: 35.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
INCLOSURE MATERIAL: GLASS OR PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

28473-02118

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013451074

NSN

5961-01-345-1074

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28473-02118

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013451074

NSN

5961-01-345-1074

MFG

SELEX GALILEO LTD

Description

CAPACITANCE RATING IN PICOFARADS: 35.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
INCLOSURE MATERIAL: GLASS OR PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

UF4004

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013451074

NSN

5961-01-345-1074

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UF4004

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013451074

NSN

5961-01-345-1074

MFG

GENERAL INSTRUMENT CORP CORPORATE HEADQUARTERS

Description

CAPACITANCE RATING IN PICOFARADS: 35.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
INCLOSURE MATERIAL: GLASS OR PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

185-54899-111

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013451075

NSN

5961-01-345-1075

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185-54899-111

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013451075

NSN

5961-01-345-1075

MFG

MOOG INC.

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 94697-185-54899 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL LENGTH: 1.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0

Z6.2-2%

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013451075

NSN

5961-01-345-1075

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Z6.2-2%

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013451075

NSN

5961-01-345-1075

MFG

JAPLAR GROUP INC. DBA JAPLAR SCHAUER

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 94697-185-54899 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL LENGTH: 1.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0

10139122-101

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013451155

NSN

5961-01-345-1155

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10139122-101

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013451155

NSN

5961-01-345-1155

MFG

TERN TECHNOLOGY INC.

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 125.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -54.0 TO 70.0 DEG CELSIUS
OVERALL HEIGHT: 0.187 INCHES NOMINAL
OVERALL LENGTH: 0.610 INCHES NOMINAL
OVERALL WIDTH: 0.413 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

SF162

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013451155

NSN

5961-01-345-1155

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SF162

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013451155

NSN

5961-01-345-1155

MFG

DIODES INC

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 125.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -54.0 TO 70.0 DEG CELSIUS
OVERALL HEIGHT: 0.187 INCHES NOMINAL
OVERALL LENGTH: 0.610 INCHES NOMINAL
OVERALL WIDTH: 0.413 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

10139122-102

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013451156

NSN

5961-01-345-1156

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10139122-102

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013451156

NSN

5961-01-345-1156

MFG

TERN TECHNOLOGY INC.

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 125.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A10 INVERTED CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -54.0 TO 70.0 DEG CELSIUS
OVERALL HEIGHT: 0.187 INCHES NOMINAL
OVERALL LENGTH: 0.610 INCHES NOMINAL
OVERALL WIDTH: 0.413 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

SF162A

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013451156

NSN

5961-01-345-1156

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SF162A

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013451156

NSN

5961-01-345-1156

MFG

DIODES INC

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 125.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A10 INVERTED CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -54.0 TO 70.0 DEG CELSIUS
OVERALL HEIGHT: 0.187 INCHES NOMINAL
OVERALL LENGTH: 0.610 INCHES NOMINAL
OVERALL WIDTH: 0.413 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

3452665-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013451322

NSN

5961-01-345-1322

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3452665-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013451322

NSN

5961-01-345-1322

MFG

SENSOR AND ANTENNA SYSTEMS LANSDALE INC.

Description

DESIGN CONTROL REFERENCE: 3452665-1
III END ITEM IDENTIFICATION: FLEET WARFARE ELECTRONIC SUPPORT GROUP
MANUFACTURERS CODE: 93346
THE MANUFACTURERS DATA:

14031822-9

TRANSISTOR

NSN, MFG P/N

5961013451713

NSN

5961-01-345-1713

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14031822-9

TRANSISTOR

NSN, MFG P/N

5961013451713

NSN

5961-01-345-1713

MFG

SAGEM DEFENSE SECURITE - GROUPE SAFR AN

SP2219AQF

TRANSISTOR

NSN, MFG P/N

5961013451713

NSN

5961-01-345-1713

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SP2219AQF

TRANSISTOR

NSN, MFG P/N

5961013451713

NSN

5961-01-345-1713

MFG

RAYTHEON COMPANY DBA RAYTHEON

14032207-5

TRANSISTOR

NSN, MFG P/N

5961013451714

NSN

5961-01-345-1714

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14032207-5

TRANSISTOR

NSN, MFG P/N

5961013451714

NSN

5961-01-345-1714

MFG

SAGEM DEFENSE SECURITE - GROUPE SAFR AN

SP2369AQF

TRANSISTOR

NSN, MFG P/N

5961013451714

NSN

5961-01-345-1714

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SP2369AQF

TRANSISTOR

NSN, MFG P/N

5961013451714

NSN

5961-01-345-1714

MFG

RAYTHEON COMPANY DBA RAYTHEON

FBL-00-184

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013451718

NSN

5961-01-345-1718

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FBL-00-184

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013451718

NSN

5961-01-345-1718

MFG

VEECO INSTRUMENTS INC LAMBDA DIV