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5961-01-344-9714
20 Products
SS-10350-1
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013449714
NSN
5961-01-344-9714
MFG
BAE SYSTEMS INTEGRATED SYSTEM TECHNO LOGIES LTD
Description
SEMICONDUCTOR DEVICE SET
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1582926-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013450096
NSN
5961-01-345-0096
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-TUCSON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
10042148-112
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013450220
NSN
5961-01-345-0220
10042148-112
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013450220
NSN
5961-01-345-0220
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS
Description
CURRENT RATING PER CHARACTERISTIC: 42.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5529B-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-14
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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CD333153
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013450220
NSN
5961-01-345-0220
MFG
TELCOM SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 42.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5529B-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-14
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
JANTX1N5529B-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013450220
NSN
5961-01-345-0220
JANTX1N5529B-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013450220
NSN
5961-01-345-0220
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 42.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5529B-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-14
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013451074
NSN
5961-01-345-1074
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CAPACITANCE RATING IN PICOFARADS: 35.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
INCLOSURE MATERIAL: GLASS OR PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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28473-02118
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013451074
NSN
5961-01-345-1074
28473-02118
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013451074
NSN
5961-01-345-1074
MFG
SELEX GALILEO LTD
Description
CAPACITANCE RATING IN PICOFARADS: 35.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
INCLOSURE MATERIAL: GLASS OR PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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UF4004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013451074
NSN
5961-01-345-1074
MFG
GENERAL INSTRUMENT CORP CORPORATE HEADQUARTERS
Description
CAPACITANCE RATING IN PICOFARADS: 35.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
INCLOSURE MATERIAL: GLASS OR PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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185-54899-111
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013451075
NSN
5961-01-345-1075
185-54899-111
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013451075
NSN
5961-01-345-1075
MFG
MOOG INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 94697-185-54899 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL LENGTH: 1.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0
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Z6.2-2%
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013451075
NSN
5961-01-345-1075
MFG
JAPLAR GROUP INC. DBA JAPLAR SCHAUER
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 94697-185-54899 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL LENGTH: 1.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0
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10139122-101
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013451155
NSN
5961-01-345-1155
10139122-101
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013451155
NSN
5961-01-345-1155
MFG
TERN TECHNOLOGY INC.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 125.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -54.0 TO 70.0 DEG CELSIUS
OVERALL HEIGHT: 0.187 INCHES NOMINAL
OVERALL LENGTH: 0.610 INCHES NOMINAL
OVERALL WIDTH: 0.413 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
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RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013451155
NSN
5961-01-345-1155
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RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013451155
NSN
5961-01-345-1155
MFG
DIODES INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 125.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -54.0 TO 70.0 DEG CELSIUS
OVERALL HEIGHT: 0.187 INCHES NOMINAL
OVERALL LENGTH: 0.610 INCHES NOMINAL
OVERALL WIDTH: 0.413 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
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10139122-102
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013451156
NSN
5961-01-345-1156
10139122-102
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013451156
NSN
5961-01-345-1156
MFG
TERN TECHNOLOGY INC.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 125.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A10 INVERTED CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -54.0 TO 70.0 DEG CELSIUS
OVERALL HEIGHT: 0.187 INCHES NOMINAL
OVERALL LENGTH: 0.610 INCHES NOMINAL
OVERALL WIDTH: 0.413 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
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SF162A
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013451156
NSN
5961-01-345-1156
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RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013451156
NSN
5961-01-345-1156
MFG
DIODES INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 125.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A10 INVERTED CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -54.0 TO 70.0 DEG CELSIUS
OVERALL HEIGHT: 0.187 INCHES NOMINAL
OVERALL LENGTH: 0.610 INCHES NOMINAL
OVERALL WIDTH: 0.413 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
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3452665-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013451322
NSN
5961-01-345-1322
3452665-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013451322
NSN
5961-01-345-1322
MFG
SENSOR AND ANTENNA SYSTEMS LANSDALE INC.
Description
DESIGN CONTROL REFERENCE: 3452665-1
III END ITEM IDENTIFICATION: FLEET WARFARE ELECTRONIC SUPPORT GROUP
MANUFACTURERS CODE: 93346
THE MANUFACTURERS DATA:
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14031822-9
TRANSISTOR
NSN, MFG P/N
5961013451713
NSN
5961-01-345-1713
MFG
SAGEM DEFENSE SECURITE - GROUPE SAFR AN
Description
TRANSISTOR
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SP2219AQF
TRANSISTOR
NSN, MFG P/N
5961013451713
NSN
5961-01-345-1713
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
TRANSISTOR
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14032207-5
TRANSISTOR
NSN, MFG P/N
5961013451714
NSN
5961-01-345-1714
MFG
SAGEM DEFENSE SECURITE - GROUPE SAFR AN
Description
TRANSISTOR
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SP2369AQF
TRANSISTOR
NSN, MFG P/N
5961013451714
NSN
5961-01-345-1714
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
TRANSISTOR
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013451718
NSN
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013451718
NSN
5961-01-345-1718
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
SEMICONDUCTOR DEVICE,DIODE
