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5961-01-341-9617

20 Products

JANTX2N3019

TRANSISTOR

NSN, MFG P/N

5961013419617

NSN

5961-01-341-9617

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JANTX2N3019

TRANSISTOR

NSN, MFG P/N

5961013419617

NSN

5961-01-341-9617

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND RADIATION HARDENED AND BURN IN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM AND 1.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

72747

TRANSISTOR

NSN, MFG P/N

5961013419618

NSN

5961-01-341-9618

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72747

TRANSISTOR

NSN, MFG P/N

5961013419618

NSN

5961-01-341-9618

MFG

INTERSIL CORPORATION

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM DETECTOR SIGNAL CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.320 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE

8878900012-1

TRANSISTOR

NSN, MFG P/N

5961013419618

NSN

5961-01-341-9618

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8878900012-1

TRANSISTOR

NSN, MFG P/N

5961013419618

NSN

5961-01-341-9618

MFG

NAVCOM DEFENSE ELECTRONICS INC.

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM DETECTOR SIGNAL CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.320 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE

94-7027

TRANSISTOR

NSN, MFG P/N

5961013419618

NSN

5961-01-341-9618

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94-7027

TRANSISTOR

NSN, MFG P/N

5961013419618

NSN

5961-01-341-9618

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM DETECTOR SIGNAL CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.320 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE

JANTX2N6766

TRANSISTOR

NSN, MFG P/N

5961013419618

NSN

5961-01-341-9618

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JANTX2N6766

TRANSISTOR

NSN, MFG P/N

5961013419618

NSN

5961-01-341-9618

MFG

MICRO USPD INC

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM DETECTOR SIGNAL CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.320 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE

V12341

TRANSISTOR

NSN, MFG P/N

5961013419618

NSN

5961-01-341-9618

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V12341

TRANSISTOR

NSN, MFG P/N

5961013419618

NSN

5961-01-341-9618

MFG

SILICONIX INCORPORATED D IV SILICONIX

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM DETECTOR SIGNAL CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.320 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE

413134

TRANSISTOR

NSN, MFG P/N

5961013419619

NSN

5961-01-341-9619

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413134

TRANSISTOR

NSN, MFG P/N

5961013419619

NSN

5961-01-341-9619

MFG

TARGET CORPORATION DBA TARGET

Description

CURRENT RATING PER CHARACTERISTIC: -2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -1.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.188 INCHES MINIMUM AND 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 35.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -400.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -350.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

JAN2N6213

TRANSISTOR

NSN, MFG P/N

5961013419619

NSN

5961-01-341-9619

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JAN2N6213

TRANSISTOR

NSN, MFG P/N

5961013419619

NSN

5961-01-341-9619

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: -2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -1.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.188 INCHES MINIMUM AND 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 35.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -400.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -350.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

151-0937-00

TRANSISTOR

NSN, MFG P/N

5961013419620

NSN

5961-01-341-9620

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151-0937-00

TRANSISTOR

NSN, MFG P/N

5961013419620

NSN

5961-01-341-9620

MFG

TEKTRONIX INC. DBA TEKTRONIX

MJF3055

TRANSISTOR

NSN, MFG P/N

5961013419620

NSN

5961-01-341-9620

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MJF3055

TRANSISTOR

NSN, MFG P/N

5961013419620

NSN

5961-01-341-9620

MFG

FREESCALE SEMICONDUCTOR INC.

5R4810-023-0004

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013419621

NSN

5961-01-341-9621

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5R4810-023-0004

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013419621

NSN

5961-01-341-9621

MFG

HAMILTON SUNDSTRAND CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/240 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 73030-5R4810-023 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 270.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 225.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

JANTX1N645-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013419621

NSN

5961-01-341-9621

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JANTX1N645-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013419621

NSN

5961-01-341-9621

MFG

MICRO USPD INC

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/240 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 73030-5R4810-023 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 270.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 225.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

413004

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013419622

NSN

5961-01-341-9622

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413004

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013419622

NSN

5961-01-341-9622

MFG

TARGET CORPORATION DBA TARGET

Description

CAPACITANCE RATING IN PICOFARADS: 2.2 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.112 INCHES
OVERALL LENGTH: 0.422 INCHES MINIMUM AND 0.462 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.157 INCHES MINIMUM AND 0.217 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, DC

UM4301C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013419622

NSN

5961-01-341-9622

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UM4301C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013419622

NSN

5961-01-341-9622

MFG

MICRO USPD INC

Description

CAPACITANCE RATING IN PICOFARADS: 2.2 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.112 INCHES
OVERALL LENGTH: 0.422 INCHES MINIMUM AND 0.462 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.157 INCHES MINIMUM AND 0.217 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, DC

151-0938-00

TRANSISTOR

NSN, MFG P/N

5961013420427

NSN

5961-01-342-0427

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151-0938-00

TRANSISTOR

NSN, MFG P/N

5961013420427

NSN

5961-01-342-0427

MFG

TEKTRONIX INC. DBA TEKTRONIX

MJF2955

TRANSISTOR

NSN, MFG P/N

5961013420427

NSN

5961-01-342-0427

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MJF2955

TRANSISTOR

NSN, MFG P/N

5961013420427

NSN

5961-01-342-0427

MFG

FREESCALE SEMICONDUCTOR INC.

24055-501-3

TRANSISTOR

NSN, MFG P/N

5961013420754

NSN

5961-01-342-0754

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24055-501-3

TRANSISTOR

NSN, MFG P/N

5961013420754

NSN

5961-01-342-0754

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DATA MULTIPLEX SYSTEM AN/USQ-82
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

472-1359-001

TRANSISTOR

NSN, MFG P/N

5961013420754

NSN

5961-01-342-0754

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472-1359-001

TRANSISTOR

NSN, MFG P/N

5961013420754

NSN

5961-01-342-0754

MFG

FREESCALE SEMICONDUCTOR INC.

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DATA MULTIPLEX SYSTEM AN/USQ-82
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

413121

TRANSISTOR

NSN, MFG P/N

5961013420755

NSN

5961-01-342-0755

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413121

TRANSISTOR

NSN, MFG P/N

5961013420755

NSN

5961-01-342-0755

MFG

TARGET CORPORATION DBA TARGET

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT439A
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 6.00 MILLIMETERS MAXIMUM
OVERALL LENGTH: 23.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 15.4 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 690.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE,
~1: STATIC, COLLECTOR OPEN

151-0389-00

TRANSISTOR

NSN, MFG P/N

5961013420756

NSN

5961-01-342-0756

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151-0389-00

TRANSISTOR

NSN, MFG P/N

5961013420756

NSN

5961-01-342-0756

MFG

TEKTRONIX INC. DBA TEKTRONIX