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5961-01-323-3875

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6277049

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961013233875

NSN

5961-01-323-3875

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6277049

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961013233875

NSN

5961-01-323-3875

MFG

RAYTHEON COMPANY

Description

COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
FUNCTION FOR WHICH DESIGNED: SWITCHING
III END ITEM IDENTIFICATION: ARMAMENT SUBSYSTEM
INCLOSURE MATERIAL: GLASS AND PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
OVERALL WIDTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: TWO 6.000 IN. WIRE LEADS; ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.150 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE

MTP4N45

TRANSISTOR

NSN, MFG P/N

5961013231243

NSN

5961-01-323-1243

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MTP4N45

TRANSISTOR

NSN, MFG P/N

5961013231243

NSN

5961-01-323-1243

MFG

FREESCALE SEMICONDUCTOR INC.

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.575 INCHES MINIMUM AND 0.625 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 53711-6099110 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 450.0 MAXIMUM DRAIN TO GATE VOLTAGE

6099109

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013231306

NSN

5961-01-323-1306

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6099109

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013231306

NSN

5961-01-323-1306

MFG

NAVAL SEA SYSTEMS COMMAND

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 0.240 INCHES MINIMUM
OVERALL LENGTH: 0.370 INCHES MINIMUM AND 0.390 INCHES MAXIMUM
OVERALL WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SPECIFICATION/STANDARD DATA: 53711-6099109 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL TYPE AND QUANTITY: 4 PRINTED CIRCUIT

PL20

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013231306

NSN

5961-01-323-1306

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PL20

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013231306

NSN

5961-01-323-1306

MFG

ELECTRONIC DEVICES INC DBA E D I

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 0.240 INCHES MINIMUM
OVERALL LENGTH: 0.370 INCHES MINIMUM AND 0.390 INCHES MAXIMUM
OVERALL WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SPECIFICATION/STANDARD DATA: 53711-6099109 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL TYPE AND QUANTITY: 4 PRINTED CIRCUIT

DVB6103D

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013231493

NSN

5961-01-323-1493

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DVB6103D

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013231493

NSN

5961-01-323-1493

MFG

SKYWORKS SOLUTIONS INC.

Description

CAPACITANCE RATING IN PICOFARADS: 2.0 MINIMUM AND 3.0 MAXIMUM
SPECIAL FEATURES: MULTICHIP STEP RECOVERY DIODE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

322971-004

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013231871

NSN

5961-01-323-1871

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322971-004

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013231871

NSN

5961-01-323-1871

MFG

AIR SYSTEM COMPONENTS INC DBA TRION IAQ DIV DIV TRION IAQ DIV

Description

DESIGN CONTROL REFERENCE: 322971-004
MANUFACTURERS CODE: 95802
MOUNTING METHOD: SLOT
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MAGNETIC PERMEABILITY SHALL NOT EXCEED 2.0 AFTER FABRICATION
THE MANUFACTURERS DATA:

322971-004VM

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013231871

NSN

5961-01-323-1871

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322971-004VM

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013231871

NSN

5961-01-323-1871

MFG

NAVAL INVENTORY CONTROL POINT MECHANICSBURG

Description

DESIGN CONTROL REFERENCE: 322971-004
MANUFACTURERS CODE: 95802
MOUNTING METHOD: SLOT
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MAGNETIC PERMEABILITY SHALL NOT EXCEED 2.0 AFTER FABRICATION
THE MANUFACTURERS DATA:

K650450

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013231872

NSN

5961-01-323-1872

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K650450

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013231872

NSN

5961-01-323-1872

MFG

BRUNSWICK CORP US MARINE DIV

Description

MOUNTING METHOD: UNTHREADED HOLE
TERMINAL TYPE AND QUANTITY: 4 TAB W/SCREW

280-21044-101

TRANSISTOR

NSN, MFG P/N

5961013232417

NSN

5961-01-323-2417

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280-21044-101

TRANSISTOR

NSN, MFG P/N

5961013232417

NSN

5961-01-323-2417

MFG

THE BOEING COMPANY DBA BOEING

Description

III END ITEM IDENTIFICATION: PACER SPECIAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEMS

44-613505

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013232419

NSN

5961-01-323-2419

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44-613505

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013232419

NSN

5961-01-323-2419

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE

353-3713-220

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013232563

NSN

5961-01-323-2563

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353-3713-220

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013232563

NSN

5961-01-323-2563

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

353-3713-340

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013232564

NSN

5961-01-323-2564

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353-3713-340

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013232564

NSN

5961-01-323-2564

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

353-3713-360

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013232565

NSN

5961-01-323-2565

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353-3713-360

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013232565

NSN

5961-01-323-2565

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

353-3713-470

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013232566

NSN

5961-01-323-2566

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353-3713-470

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013232566

NSN

5961-01-323-2566

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

353-6614-020

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013232567

NSN

5961-01-323-2567

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353-6614-020

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013232567

NSN

5961-01-323-2567

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

III END ITEM IDENTIFICATION: USED ON CONTROL ANTENNA
SPECIAL FEATURES: MAX FORWARD V .340; EXTERNAL SURFACES CORROSION RESISTANT FINISH; WORKING PEAK REVERSE VOLTAGE 40V; AMBIENT TEMP 75C

5035431

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013232569

NSN

5961-01-323-2569

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5035431

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013232569

NSN

5961-01-323-2569

MFG

RAYTHEON COMPANY

05061-8014

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013232830

NSN

5961-01-323-2830

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05061-8014

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013232830

NSN

5961-01-323-2830

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: STRATEGIC WEAPON SYSTEMS (POSEIDON & TRIDENT)
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL

C5083387

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013233017

NSN

5961-01-323-3017

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C5083387

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013233017

NSN

5961-01-323-3017

MFG

US ARMY COMBAT SURVEILLANCE AND TARGET ACQUISITION LABORATORY

Description

III END ITEM IDENTIFICATION: TRANSPONDER SET AN/PPN-19(V)-1
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES NOMINAL
OVERALL LENGTH: 2.440 INCHES NOMINAL
TERMINAL LENGTH: 1.130 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 700.0 NOMINAL REVERSE VOLTAGE, TOTAL RMS

SMDR1M

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013233017

NSN

5961-01-323-3017

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SMDR1M

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013233017

NSN

5961-01-323-3017

MFG

SOLID STATE DEVICES INC.

Description

III END ITEM IDENTIFICATION: TRANSPONDER SET AN/PPN-19(V)-1
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES NOMINAL
OVERALL LENGTH: 2.440 INCHES NOMINAL
TERMINAL LENGTH: 1.130 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 700.0 NOMINAL REVERSE VOLTAGE, TOTAL RMS

1320418

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961013233765

NSN

5961-01-323-3765

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1320418

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961013233765

NSN

5961-01-323-3765

MFG

DEUTZ CORPORATION