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5961-01-307-5938
20 Products
65550-03502-104
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013075938
NSN
5961-01-307-5938
65550-03502-104
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013075938
NSN
5961-01-307-5938
MFG
SIKORSKY AIRCRAFT CORPORATION
Description
DESIGN CONTROL REFERENCE: 65550-03502-104
III END ITEM IDENTIFICATION: AIRCRAFT MODEL H-53 (NON-JSL)
MANUFACTURERS CODE: 78286
THE MANUFACTURERS DATA:
Related Searches:
A532A150-101
TRANSISTOR
NSN, MFG P/N
5961013076323
NSN
5961-01-307-6323
MFG
KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: A532A150-101
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND BURN IN
III END ITEM IDENTIFICATION: INERTIALMEASURING UNIT
MANUFACTURERS CODE: 88818
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.760 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MINIMUM TOTAL POWER DISSIPATION AND 3.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.016 INCHES MINIMUM AND 0.021 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL COLLECTOR TO BASE VOLTAGE, DC
Related Searches:
A532A152-101
TRANSISTOR
NSN, MFG P/N
5961013076324
NSN
5961-01-307-6324
MFG
KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES NOMINAL GATE CURRENT
DESIGN CONTROL REFERENCE: A532A152-101
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: INERTIAL MEASURING UNIT
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 88818
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.710 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MINIMUM TOTAL POWER DISSIPATION AND 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.016 INCHES MINIMUM AND 0.021 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL GATE TO SOURCE VOLTAGE
Related Searches:
123SAV60115-25
TRANSISTOR
NSN, MFG P/N
5961013076891
NSN
5961-01-307-6891
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN AEROSPACE SYSTEMS
Description
TRANSISTOR
Related Searches:
123SAV60115-27
TRANSISTOR
NSN, MFG P/N
5961013076892
NSN
5961-01-307-6892
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN AEROSPACE SYSTEMS
Description
TRANSISTOR
Related Searches:
MPSA29
TRANSISTOR
NSN, MFG P/N
5961013076893
NSN
5961-01-307-6893
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
GX92117B
TRANSISTOR
NSN, MFG P/N
5961013076894
NSN
5961-01-307-6894
MFG
SEMICOA DBA SEMICOA SEMI CONDUCTORS
Description
TRANSISTOR
Related Searches:
11200008-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013077191
NSN
5961-01-307-7191
11200008-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013077191
NSN
5961-01-307-7191
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DIV LASER SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.366 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL CIRCLE DIAMETER: 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 1.015 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 700.0 MAXIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
60511257-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013077191
NSN
5961-01-307-7191
60511257-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013077191
NSN
5961-01-307-7191
MFG
SEMITRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.366 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL CIRCLE DIAMETER: 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 1.015 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 700.0 MAXIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
72715
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013077191
NSN
5961-01-307-7191
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.366 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL CIRCLE DIAMETER: 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 1.015 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 700.0 MAXIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
S2600M
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013077191
NSN
5961-01-307-7191
S2600M
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013077191
NSN
5961-01-307-7191
MFG
RCA CORP NEW PRODUCTS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.366 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL CIRCLE DIAMETER: 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 1.015 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 700.0 MAXIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
1GS1-4202
TRANSISTOR
NSN, MFG P/N
5961013077513
NSN
5961-01-307-7513
MFG
HEWLETT PACKARD CO
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: FORRESTAL CLASS CV, NIMITZ CLASS CVN, OLIVER PERRY CLASS FFG, ARLEIGH BURKE CLASS DDG, KIDD CLASS DDG, LOS ANGELES CLASS SSN (688), VIRGINIA CLASS CGN (41), WASP CLASS LHD, TICONDEROGA CLASS CG (47).
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
Related Searches:
1GS1-4213
TRANSISTOR
NSN, MFG P/N
5961013077513
NSN
5961-01-307-7513
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: FORRESTAL CLASS CV, NIMITZ CLASS CVN, OLIVER PERRY CLASS FFG, ARLEIGH BURKE CLASS DDG, KIDD CLASS DDG, LOS ANGELES CLASS SSN (688), VIRGINIA CLASS CGN (41), WASP CLASS LHD, TICONDEROGA CLASS CG (47).
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
Related Searches:
1855-0271
TRANSISTOR
NSN, MFG P/N
5961013077627
NSN
5961-01-307-7627
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 3.00 MILLIAMPERES MINIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 10.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 1.00 NANOAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
III END ITEM IDENTIFICATION: 6625-01-018-8584 GENERATOR,SIGNAL
INTERNAL CONFIGURATION: FIELD EFFECT
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
SPF3080
TRANSISTOR
NSN, MFG P/N
5961013077627
NSN
5961-01-307-7627
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 3.00 MILLIAMPERES MINIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 10.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 1.00 NANOAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
III END ITEM IDENTIFICATION: 6625-01-018-8584 GENERATOR,SIGNAL
INTERNAL CONFIGURATION: FIELD EFFECT
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
1N1124
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013077628
NSN
5961-01-307-7628
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N1124
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
Related Searches:
2900261
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013077629
NSN
5961-01-307-7629
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 350.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
MA43943
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013077629
NSN
5961-01-307-7629
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CURRENT RATING PER CHARACTERISTIC: 350.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
SSV104
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013077629
NSN
5961-01-307-7629
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
CURRENT RATING PER CHARACTERISTIC: 350.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
2916262
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013077630
NSN
5961-01-307-7630
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED HOLE
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL DIAMETER: 1.120 INCHES NOMINAL
OVERALL LENGTH: 1.406 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED HOLE AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 50.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
