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5961-01-306-8848
20 Products
BZX79-C3V9
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013068848
NSN
5961-01-306-8848
BZX79-C3V9
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013068848
NSN
5961-01-306-8848
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE AND ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.85 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.25 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 25.4 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
S6314-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013065538
NSN
5961-01-306-5538
S6314-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013065538
NSN
5961-01-306-5538
MFG
ST-SEMICON INC
Description
MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
A532A149-101
TRANSISTOR
NSN, MFG P/N
5961013067097
NSN
5961-01-306-7097
MFG
KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: A532A149-101
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND BURN IN
III END ITEM IDENTIFICATION: INERTIAL MEASURING UNIT
MANUFACTURERS CODE: 88818
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.760 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MINIMUM TOTAL POWER DISSIPATION AND 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.016 INCHES MINIMUM AND 0.021 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL COLLECTOR TO BASE VOLTAGE, DC
Related Searches:
148632-2003
TRANSISTOR
NSN, MFG P/N
5961013067098
NSN
5961-01-306-7098
MFG
BOEING COMPANY THE DBA BOEING
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES NOMINAL BASE CURRENT, INSTANTANEOUS
FEATURES PROVIDED: BURN IN
III END ITEM IDENTIFICATION: INERTIAL MEASURING UNIT
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.003 INCHES MINIMUM AND 0.006 INCHES MAXIMUM
TERMINAL LENGTH: 0.250 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM COLLECTOR SUPPLY VOLTAGE
Related Searches:
A532A187-101
TRANSISTOR
NSN, MFG P/N
5961013067098
NSN
5961-01-306-7098
MFG
KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES NOMINAL BASE CURRENT, INSTANTANEOUS
FEATURES PROVIDED: BURN IN
III END ITEM IDENTIFICATION: INERTIAL MEASURING UNIT
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.003 INCHES MINIMUM AND 0.006 INCHES MAXIMUM
TERMINAL LENGTH: 0.250 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM COLLECTOR SUPPLY VOLTAGE
Related Searches:
ULN2003AJ4
TRANSISTOR
NSN, MFG P/N
5961013067098
NSN
5961-01-306-7098
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES NOMINAL BASE CURRENT, INSTANTANEOUS
FEATURES PROVIDED: BURN IN
III END ITEM IDENTIFICATION: INERTIAL MEASURING UNIT
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.003 INCHES MINIMUM AND 0.006 INCHES MAXIMUM
TERMINAL LENGTH: 0.250 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM COLLECTOR SUPPLY VOLTAGE
Related Searches:
ULS-2003HM128342
TRANSISTOR
NSN, MFG P/N
5961013067098
NSN
5961-01-306-7098
MFG
SPRAGUE ELECTRIC CO WORLD HQS
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES NOMINAL BASE CURRENT, INSTANTANEOUS
FEATURES PROVIDED: BURN IN
III END ITEM IDENTIFICATION: INERTIAL MEASURING UNIT
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.003 INCHES MINIMUM AND 0.006 INCHES MAXIMUM
TERMINAL LENGTH: 0.250 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM COLLECTOR SUPPLY VOLTAGE
Related Searches:
K633200025
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013067099
NSN
5961-01-306-7099
K633200025
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013067099
NSN
5961-01-306-7099
MFG
F E L CORP
Description
DESIGN CONTROL REFERENCE: K633200025
III END ITEM IDENTIFICATION: SHIPS TOWED ACOUSTIC PROJECTOR
MANUFACTURERS CODE: 16786
THE MANUFACTURERS DATA:
Related Searches:
932545-0001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013067100
NSN
5961-01-306-7100
932545-0001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013067100
NSN
5961-01-306-7100
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
III END ITEM IDENTIFICATION: INERTIAL MEASURING UNIT
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 06481-932545 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR
Related Searches:
932545-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013067100
NSN
5961-01-306-7100
932545-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013067100
NSN
5961-01-306-7100
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
III END ITEM IDENTIFICATION: INERTIAL MEASURING UNIT
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 06481-932545 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR
Related Searches:
SFQ545H
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013067100
NSN
5961-01-306-7100
SFQ545H
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013067100
NSN
5961-01-306-7100
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
III END ITEM IDENTIFICATION: INERTIAL MEASURING UNIT
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 06481-932545 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR
Related Searches:
5856387-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013067101
NSN
5961-01-306-7101
5856387-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013067101
NSN
5961-01-306-7101
MFG
NAVAL SEA SYSTEMS COMMAND
Description
DESIGN CONTROL REFERENCE: 5856387-1
III END ITEM IDENTIFICATION: FORWARD POWER SUPPLY
MANUFACTURERS CODE: 53711
OVERALL HEIGHT: 0.662 INCHES NOMINAL
OVERALL LENGTH: 1.573 INCHES NOMINAL
OVERALL WIDTH: 1.050 INCHES NOMINAL
THE MANUFACTURERS DATA:
Related Searches:
586R479H04
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013067466
NSN
5961-01-306-7466
586R479H04
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013067466
NSN
5961-01-306-7466
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
S6479H4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013067466
NSN
5961-01-306-7466
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
41-1025-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013068846
NSN
5961-01-306-8846
41-1025-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013068846
NSN
5961-01-306-8846
MFG
SIGNAL TECHNOLOGY CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.440 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
UES705HR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013068846
NSN
5961-01-306-8846
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.440 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
807195-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013068847
NSN
5961-01-306-8847
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
PR1326
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013068847
NSN
5961-01-306-8847
MFG
OPTEK TECHNOLOGY INC
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
SEN-R-372
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013068847
NSN
5961-01-306-8847
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
28371-242D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013068848
NSN
5961-01-306-8848
28371-242D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013068848
NSN
5961-01-306-8848
MFG
AEROFLEX WICHITA INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE AND ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.85 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.25 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 25.4 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
