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5961-01-274-9965
20 Products
C5106063-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012749965
NSN
5961-01-274-9965
C5106063-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012749965
NSN
5961-01-274-9965
MFG
SIGNALS WARFARE PROJECT MANAGER
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
125108-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012748644
NSN
5961-01-274-8644
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 125108-1
MANUFACTURERS CODE: 94271
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
40-07199-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012748646
NSN
5961-01-274-8646
40-07199-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012748646
NSN
5961-01-274-8646
MFG
DIGITEC CORP
Description
CAPACITANCE RATING IN PICOFARADS: 2.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.180 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
OVERALL LENGTH: 1.850 INCHES NOMINAL
OVERALL WIDTH: 0.080 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.5 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
EPAD50
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012748646
NSN
5961-01-274-8646
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
CAPACITANCE RATING IN PICOFARADS: 2.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.180 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
OVERALL LENGTH: 1.850 INCHES NOMINAL
OVERALL WIDTH: 0.080 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.5 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
SZP20138-7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012748962
NSN
5961-01-274-8962
SZP20138-7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012748962
NSN
5961-01-274-8962
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.2 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -1.0 TO 1.0
Related Searches:
204-0013-010
TRANSISTOR
NSN, MFG P/N
5961012748963
NSN
5961-01-274-8963
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
TRANSISTOR
Related Searches:
IRFH350
TRANSISTOR
NSN, MFG P/N
5961012748963
NSN
5961-01-274-8963
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
TRANSISTOR
Related Searches:
UFNH350
TRANSISTOR
NSN, MFG P/N
5961012748963
NSN
5961-01-274-8963
MFG
MICRO USPD INC
Description
TRANSISTOR
Related Searches:
4044204-499
TRANSISTOR
NSN, MFG P/N
5961012748965
NSN
5961-01-274-8965
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 90.0 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
VA1106
TRANSISTOR
NSN, MFG P/N
5961012748965
NSN
5961-01-274-8965
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 90.0 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
000-251
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012748982
NSN
5961-01-274-8982
000-251
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012748982
NSN
5961-01-274-8982
MFG
MILLER ELECTRIC MFG CO
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
3N7798
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012749000
NSN
5961-01-274-9000
3N7798
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012749000
NSN
5961-01-274-9000
MFG
CATERPILLAR INC. DBA CATERPILLAR DIV GOVERNMENTAL AND DEFENSE PRODUCTS
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
005-882
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012749001
NSN
5961-01-274-9001
005-882
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012749001
NSN
5961-01-274-9001
MFG
MILLER ELECTRIC MFG CO
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
000-176
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012749002
NSN
5961-01-274-9002
000-176
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012749002
NSN
5961-01-274-9002
MFG
MILLER ELECTRIC MFG CO
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
JANTXV1N6063A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012749251
NSN
5961-01-274-9251
JANTXV1N6063A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012749251
NSN
5961-01-274-9251
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL REVERSE BREAKDOWN CURRENT, DC AND 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N6063A
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/507 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 95.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC AND 105.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC AND 82.0 NOMINAL WORKING PEAK REVERSE VOLTAGE
Related Searches:
125511-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012749252
NSN
5961-01-274-9252
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 530.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE ELECTRONICS SUPPLY CENTER PRODUCTION STANDARD NO. L03965; FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0
Related Searches:
50M16SZ2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012749252
NSN
5961-01-274-9252
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 530.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE ELECTRONICS SUPPLY CENTER PRODUCTION STANDARD NO. L03965; FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0
Related Searches:
DZ850828A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012749252
NSN
5961-01-274-9252
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 530.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE ELECTRONICS SUPPLY CENTER PRODUCTION STANDARD NO. L03965; FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0
Related Searches:
L03965
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012749252
NSN
5961-01-274-9252
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 530.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE ELECTRONICS SUPPLY CENTER PRODUCTION STANDARD NO. L03965; FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0
Related Searches:
C5106063-005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012749964
NSN
5961-01-274-9964
C5106063-005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012749964
NSN
5961-01-274-9964
MFG
SIGNALS WARFARE PROJECT MANAGER
Description
III END ITEM IDENTIFICATION: TACTICAL GENERIC
SPECIAL FEATURES: ALTERED ITEM DRAWING
