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5961-01-266-3984
20 Products
12341840
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012663984
NSN
5961-01-266-3984
MFG
AM GENERAL LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1906-0229
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012664117
NSN
5961-01-266-4117
1906-0229
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012664117
NSN
5961-01-266-4117
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
COMPONENT NAME AND QUANTITY: 8 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.790 INCHES NOMINAL
OVERALL WIDTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL TRANSISTOR
Related Searches:
FSA3153P
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012664117
NSN
5961-01-266-4117
FSA3153P
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012664117
NSN
5961-01-266-4117
MFG
FAIRCHILD SEMICONDUCTOR CORP COMPONENTS GROUP SUB OF SCHLUMBERGER LTD
Description
COMPONENT NAME AND QUANTITY: 8 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.790 INCHES NOMINAL
OVERALL WIDTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL TRANSISTOR
Related Searches:
MC1107P
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012664117
NSN
5961-01-266-4117
MC1107P
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012664117
NSN
5961-01-266-4117
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 8 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.790 INCHES NOMINAL
OVERALL WIDTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL TRANSISTOR
Related Searches:
3280/24513
OVEN,ELECTRONIC COM
NSN, MFG P/N
5961012664623
NSN
5961-01-266-4623
MFG
DLA LAND AND MARITIME
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: SEMI-CONDUCTOR ACCESSORY; COMPONENT OVEN TO SUIT TO-18 OUTLINE; CONTROLLED TEMPERATURE; OPERATE AT 24.0 V AC/DC
Related Searches:
10157308
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012665131
NSN
5961-01-266-5131
10157308
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012665131
NSN
5961-01-266-5131
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
SRD4104
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012665445
NSN
5961-01-266-5445
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.430 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
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ECG304A
TRANSISTOR
NSN, MFG P/N
5961012665704
NSN
5961-01-266-5704
MFG
PHILIPS ECG INC DIV OF NORTH AMERICAN PHILIPS CORP
Description
TRANSISTOR
Related Searches:
634-1-042
TRIAC
NSN, MFG P/N
5961012667448
NSN
5961-01-266-7448
MFG
3M UNITEK CORPORATION DIV 3M HEALTH CARE BUSINESS
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: REPAIR PART FOR NSN 6520-01-132-7970; FURNACE,DENTAL LABORATORY,ELECTRIC; MODEL NO. 738-080; BY UNITEK CORP.
Related Searches:
NAVAL REPAIR PART
TRIAC
NSN, MFG P/N
5961012667448
NSN
5961-01-266-7448
MFG
NAVAL MEDICAL MATERIAL SUPPORT COMMAND DETACHMENT
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: REPAIR PART FOR NSN 6520-01-132-7970; FURNACE,DENTAL LABORATORY,ELECTRIC; MODEL NO. 738-080; BY UNITEK CORP.
Related Searches:
3450WA100-38A
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012667569
NSN
5961-01-266-7569
3450WA100-38A
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012667569
NSN
5961-01-266-7569
MFG
LAURENCE R G CO INC
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
K78050801X9
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012667569
NSN
5961-01-266-7569
K78050801X9
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012667569
NSN
5961-01-266-7569
MFG
LESLIE CONTROLS INC.
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
762-066
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012667570
NSN
5961-01-266-7570
762-066
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012667570
NSN
5961-01-266-7570
MFG
LECO CORPORATION DBA TEM-PRESS DIVISION
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
Related Searches:
249-0238
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012667640
NSN
5961-01-266-7640
MFG
ONAN CORPORATION DBA CUMMINS POWER GENERATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2N4220
TRANSISTOR
NSN, MFG P/N
5961012667905
NSN
5961-01-266-7905
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5238 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -30.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
P17-500-020A1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012667906
NSN
5961-01-266-7906
P17-500-020A1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012667906
NSN
5961-01-266-7906
MFG
LA MARCHE MFG. CO. DBA LA MARCHE
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES NOMINAL FORWARD CURRENT, DC
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.238 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL NOMINAL REGULATOR VOLTAGE
Related Searches:
SZ15D1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012667907
NSN
5961-01-266-7907
MFG
PETER PARTS ELECTRONICS INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT NEAR BREAKDOWN KNEE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES NOMINAL
OVERALL LENGTH: 0.110 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0
Related Searches:
Z15-01PCT1MA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012667907
NSN
5961-01-266-7907
Z15-01PCT1MA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012667907
NSN
5961-01-266-7907
MFG
JAPLAR GROUP INC. DBA JAPLAR SCHAUER
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT NEAR BREAKDOWN KNEE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES NOMINAL
OVERALL LENGTH: 0.110 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0
Related Searches:
SA20CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012667908
NSN
5961-01-266-7908
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM ON-STATE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.120 INCHES MINIMUM AND 0.127 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: BIPOLAR DIODE
TERMINAL CIRCLE DIAMETER: 0.030 INCHES MINIMUM AND 0.034 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
3N5980
DIODE ASSEMBLY
NSN, MFG P/N
5961012668832
NSN
5961-01-266-8832
MFG
CATERPILLAR INC. DBA CATERPILLAR DIV GOVERNMENTAL AND DEFENSE PRODUCTS
Description
III END ITEM IDENTIFICATION: 1915-01-153-8801
