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5961-01-137-0229
20 Products
393314
TRANSISTOR
NSN, MFG P/N
5961011370229
NSN
5961-01-137-0229
MFG
FLUKE CORPORATION
Description
TRANSISTOR
Related Searches:
ITS-30721
TRANSISTOR
NSN, MFG P/N
5961011370229
NSN
5961-01-137-0229
MFG
INTERSIL INC SUB OF GENERAL ELECTRIC CO
Description
TRANSISTOR
Related Searches:
J2086
TRANSISTOR
NSN, MFG P/N
5961011370229
NSN
5961-01-137-0229
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
TRANSISTOR
Related Searches:
578R614H29
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011370230
NSN
5961-01-137-0230
578R614H29
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011370230
NSN
5961-01-137-0230
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SCLC82H-29
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011370230
NSN
5961-01-137-0230
SCLC82H-29
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011370230
NSN
5961-01-137-0230
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
619903-902
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011370231
NSN
5961-01-137-0231
619903-902
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011370231
NSN
5961-01-137-0231
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SMV1467H
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011370231
NSN
5961-01-137-0231
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
381523-901
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011370232
NSN
5961-01-137-0232
381523-901
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011370232
NSN
5961-01-137-0232
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FUNCTION FOR WHICH DESIGNED: VARACTOR DIODE
III END ITEM IDENTIFICATION: AN/ARC-164
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.063 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 37695-619903 MANUFACTURERS SPECIFICATION
TERMINAL LENGTH: 1.140 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
619903-904
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011370232
NSN
5961-01-137-0232
619903-904
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011370232
NSN
5961-01-137-0232
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FUNCTION FOR WHICH DESIGNED: VARACTOR DIODE
III END ITEM IDENTIFICATION: AN/ARC-164
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.063 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 37695-619903 MANUFACTURERS SPECIFICATION
TERMINAL LENGTH: 1.140 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
MV3102
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011370232
NSN
5961-01-137-0232
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FUNCTION FOR WHICH DESIGNED: VARACTOR DIODE
III END ITEM IDENTIFICATION: AN/ARC-164
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.063 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 37695-619903 MANUFACTURERS SPECIFICATION
TERMINAL LENGTH: 1.140 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
JANTX1N5526B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011370233
NSN
5961-01-137-0233
JANTX1N5526B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011370233
NSN
5961-01-137-0233
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 870.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5526B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 2350-01-048-5920
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-14
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
Related Searches:
11567770
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011370297
NSN
5961-01-137-0297
11567770
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011370297
NSN
5961-01-137-0297
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.620 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
Related Searches:
CX921
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011370297
NSN
5961-01-137-0297
MFG
MICRO USPD INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.620 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
Related Searches:
KCII/1178
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011370297
NSN
5961-01-137-0297
KCII/1178
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011370297
NSN
5961-01-137-0297
MFG
KOEHLKE COMPONENTS INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.620 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
Related Searches:
23145
TRANSISTOR
NSN, MFG P/N
5961011370762
NSN
5961-01-137-0762
MFG
SMITHS AEROSPACE INC. ELECTRONIC SYSTEMS-GRAND RAPIDS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 30377
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 23145
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.8 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.021 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
2N3019
TRANSISTOR
NSN, MFG P/N
5961011370762
NSN
5961-01-137-0762
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 30377
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 23145
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.8 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.021 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
517843
TRANSISTOR
NSN, MFG P/N
5961011370763
NSN
5961-01-137-0763
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
TRANSISTOR
Related Searches:
649A851H01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011370766
NSN
5961-01-137-0766
649A851H01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011370766
NSN
5961-01-137-0766
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
DMA6372
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011370766
NSN
5961-01-137-0766
MFG
SKYWORKS SOLUTIONS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
JANTX1N748
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011370911
NSN
5961-01-137-0911
JANTX1N748
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011370911
NSN
5961-01-137-0911
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N748
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500-127
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500/127 SPECIFICATION
