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5961-01-104-6400
20 Products
107308-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011046400
NSN
5961-01-104-6400
107308-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011046400
NSN
5961-01-104-6400
MFG
ROLM CORP MIL SPEC COMPUTERS
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
2SC1515K
TRANSISTOR
NSN, MFG P/N
5961011044755
NSN
5961-01-104-4755
MFG
HITACHI CONDENSER CO. LTD STROBE DIVISION
Description
TRANSISTOR
Related Searches:
2SC1475
TRANSISTOR
NSN, MFG P/N
5961011044757
NSN
5961-01-104-4757
MFG
SONY CORPORATION
Description
TRANSISTOR
Related Searches:
2SB562
TRANSISTOR
NSN, MFG P/N
5961011044758
NSN
5961-01-104-4758
MFG
HITACHI CONDENSER CO. LTD STROBE DIVISION
Description
TRANSISTOR
Related Searches:
2SD468
TRANSISTOR
NSN, MFG P/N
5961011044759
NSN
5961-01-104-4759
MFG
HITACHI CONDENSER CO. LTD STROBE DIVISION
Description
TRANSISTOR
Related Searches:
2SC1740
TRANSISTOR
NSN, MFG P/N
5961011044761
NSN
5961-01-104-4761
MFG
HITACHI DENSHI LTD
Description
TRANSISTOR
Related Searches:
2SA673
TRANSISTOR
NSN, MFG P/N
5961011044762
NSN
5961-01-104-4762
MFG
HITACHI DENSHI LTD
Description
TRANSISTOR
Related Searches:
2SA773
TRANSISTOR
NSN, MFG P/N
5961011044763
NSN
5961-01-104-4763
MFG
SONY CORPORATION
Description
TRANSISTOR
Related Searches:
1902-0629
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011045100
NSN
5961-01-104-5100
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES NOMINAL
OVERALL LENGTH: 0.350 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
SZ13651
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011045100
NSN
5961-01-104-5100
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES NOMINAL
OVERALL LENGTH: 0.350 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1114246-00
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011045331
NSN
5961-01-104-5331
1114246-00
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011045331
NSN
5961-01-104-5331
MFG
COMPAQ FEDERAL LLC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 0.562 INCHES MINIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
UES2603
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011045331
NSN
5961-01-104-5331
UES2603
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011045331
NSN
5961-01-104-5331
MFG
MICRO USPD INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 0.562 INCHES MINIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
151-0297-00
TRANSISTOR
NSN, MFG P/N
5961011045808
NSN
5961-01-104-5808
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
Related Searches:
ST613
TRANSISTOR
NSN, MFG P/N
5961011045808
NSN
5961-01-104-5808
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
2SC1670
TRANSISTOR
NSN, MFG P/N
5961011045809
NSN
5961-01-104-5809
MFG
SONY CORPORATION
Description
TRANSISTOR
Related Searches:
13043759
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011045810
NSN
5961-01-104-5810
MFG
RAYTHEON COMPANY
Description
CAPACITANCE RATING IN PICOFARADS: 4.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM DARK CURRENT
FUNCTION FOR WHICH DESIGNED: PHOTODIODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 60.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 82577-13043759 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 350.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
C30817
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011045810
NSN
5961-01-104-5810
MFG
INTERSIL CORPORATION
Description
CAPACITANCE RATING IN PICOFARADS: 4.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM DARK CURRENT
FUNCTION FOR WHICH DESIGNED: PHOTODIODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 60.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 82577-13043759 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 350.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
40550
TRANSISTOR
NSN, MFG P/N
5961011046043
NSN
5961-01-104-6043
MFG
CARDION INC
Description
CURRENT RATING PER CHARACTERISTIC: 0.250 AMPERES NOMINAL COLLECTOR CURRENT, DC
FEATURES PROVIDED: GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: REMOTE SYSTEM MONITOR (RSM)
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.505 INCHES
OVERALL DIAMETER: 0.204 INCHES NOMINAL
OVERALL LENGTH: 0.128 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 4.0 NOMINAL EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
E1B6
TRANSISTOR
NSN, MFG P/N
5961011046043
NSN
5961-01-104-6043
MFG
VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 0.250 AMPERES NOMINAL COLLECTOR CURRENT, DC
FEATURES PROVIDED: GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: REMOTE SYSTEM MONITOR (RSM)
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.505 INCHES
OVERALL DIAMETER: 0.204 INCHES NOMINAL
OVERALL LENGTH: 0.128 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 4.0 NOMINAL EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
D23-0001-201
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011046400
NSN
5961-01-104-6400
D23-0001-201
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011046400
NSN
5961-01-104-6400
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
