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5961-01-087-0160

20 Products

125552

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010870160

NSN

5961-01-087-0160

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125552

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010870160

NSN

5961-01-087-0160

MFG

SCHAEFF NAMCO INC

1C3645CPM1HMB1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010870160

NSN

5961-01-087-0160

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1C3645CPM1HMB1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010870160

NSN

5961-01-087-0160

MFG

GENERAL ELECTRIC CO DIRECT CURRENT MOTOR AND GENERATOR DEPT

36-1HMB-F1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010870160

NSN

5961-01-087-0160

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36-1HMB-F1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010870160

NSN

5961-01-087-0160

MFG

FLIGHT SYSTEMS INC

IC3645CPM1HMB1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010870160

NSN

5961-01-087-0160

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IC3645CPM1HMB1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010870160

NSN

5961-01-087-0160

MFG

GENERAL ELECTRIC CO GE DRIVE SYSTEMS GOVERNMENT BUSINESS OPN

MMP2-7

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010870160

NSN

5961-01-087-0160

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MMP2-7

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010870160

NSN

5961-01-087-0160

MFG

PETTIBONE LLC

29008-01

TRANSISTOR

NSN, MFG P/N

5961010870368

NSN

5961-01-087-0368

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29008-01

TRANSISTOR

NSN, MFG P/N

5961010870368

NSN

5961-01-087-0368

MFG

ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 08748
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 29008-01
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.021 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN

2N930A

TRANSISTOR

NSN, MFG P/N

5961010870368

NSN

5961-01-087-0368

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2N930A

TRANSISTOR

NSN, MFG P/N

5961010870368

NSN

5961-01-087-0368

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 08748
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 29008-01
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.021 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN

1N4533

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961010870517

NSN

5961-01-087-0517

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1N4533

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961010870517

NSN

5961-01-087-0517

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

III END ITEM IDENTIFICATION: AN/GPN-22(V)
MANUFACTURERS CODE: 08742
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: 50-464-080
SPEC/STD CONTROLLING DATA:

50-464-080

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961010870517

NSN

5961-01-087-0517

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50-464-080

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961010870517

NSN

5961-01-087-0517

MFG

ASTEC AMERICA INC .

Description

III END ITEM IDENTIFICATION: AN/GPN-22(V)
MANUFACTURERS CODE: 08742
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: 50-464-080
SPEC/STD CONTROLLING DATA:

AD0121513

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961010870517

NSN

5961-01-087-0517

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AD0121513

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961010870517

NSN

5961-01-087-0517

MFG

ROHDE & SCHWARZ GMBH & CO. KG

Description

III END ITEM IDENTIFICATION: AN/GPN-22(V)
MANUFACTURERS CODE: 08742
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: 50-464-080
SPEC/STD CONTROLLING DATA:

12-271 M0D

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010870548

NSN

5961-01-087-0548

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12-271 M0D

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010870548

NSN

5961-01-087-0548

MFG

AEROFLEX/WEINSCHEL CORPORATION

VH247

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010870548

NSN

5961-01-087-0548

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VH247

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010870548

NSN

5961-01-087-0548

MFG

L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION

802741-1

TRANSISTOR

NSN, MFG P/N

5961010871302

NSN

5961-01-087-1302

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802741-1

TRANSISTOR

NSN, MFG P/N

5961010871302

NSN

5961-01-087-1302

MFG

RAYTHEON COMPANY

Description

DESIGN CONTROL REFERENCE: 802741-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 96214
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL HEIGHT: 0.230 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

584R512H01

TRANSISTOR

NSN, MFG P/N

5961010871304

NSN

5961-01-087-1304

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584R512H01

TRANSISTOR

NSN, MFG P/N

5961010871304

NSN

5961-01-087-1304

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER
DESIGN CONTROL REFERENCE: 584R512H01
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AN/ALQ-153
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 97942
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.215 INCHES MAXIMUM
OVERALL LENGTH: 0.395 INCHES MINIMUM AND 0.409 INCHES MAXIMUM
OVERALL WIDTH: 0.396 INCHES MINIMUM AND 0.408 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.080 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER

581R193H01

TRANSISTOR

NSN, MFG P/N

5961010871305

NSN

5961-01-087-1305

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581R193H01

TRANSISTOR

NSN, MFG P/N

5961010871305

NSN

5961-01-087-1305

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: SWITCHING
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.186 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.625 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

ITS30139

TRANSISTOR

NSN, MFG P/N

5961010871305

NSN

5961-01-087-1305

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ITS30139

TRANSISTOR

NSN, MFG P/N

5961010871305

NSN

5961-01-087-1305

MFG

INTERSIL INC SUB OF GENERAL ELECTRIC CO

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: SWITCHING
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.186 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.625 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

SFC7406

TRANSISTOR

NSN, MFG P/N

5961010871305

NSN

5961-01-087-1305

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SFC7406

TRANSISTOR

NSN, MFG P/N

5961010871305

NSN

5961-01-087-1305

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: SWITCHING
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.186 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.625 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

SFE1302H

TRANSISTOR

NSN, MFG P/N

5961010871305

NSN

5961-01-087-1305

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SFE1302H

TRANSISTOR

NSN, MFG P/N

5961010871305

NSN

5961-01-087-1305

MFG

FREESCALE SEMICONDUCTOR INC.

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: SWITCHING
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.186 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.625 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

332270-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010871306

NSN

5961-01-087-1306

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332270-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010871306

NSN

5961-01-087-1306

MFG

RAYTHEON COMPANY

Description

DESIGN CONTROL REFERENCE: 332270-1
III END ITEM IDENTIFICATION: MODEL P-3C
MANUFACTURERS CODE: 96214
THE MANUFACTURERS DATA:

332270-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010871307

NSN

5961-01-087-1307

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332270-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010871307

NSN

5961-01-087-1307

MFG

RAYTHEON COMPANY

Description

DESIGN CONTROL REFERENCE: 332270-2
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 96214
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA: