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5961-01-008-9837
20 Products
168-1039-000
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010089837
NSN
5961-01-008-9837
168-1039-000
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010089837
NSN
5961-01-008-9837
MFG
NCR CORP POWER SYSTEMS DIV
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
862101-0034
TRANSISTOR
NSN, MFG P/N
5961010089641
NSN
5961-01-008-9641
MFG
LITTON SYSTEMS INC. DIV NAVIGATION SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
862101-34
TRANSISTOR
NSN, MFG P/N
5961010089641
NSN
5961-01-008-9641
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
TS 2280
TRANSISTOR
NSN, MFG P/N
5961010089641
NSN
5961-01-008-9641
MFG
ITT SEMICONDUCTORS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
3005687-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010089697
NSN
5961-01-008-9697
3005687-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010089697
NSN
5961-01-008-9697
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
304C
DIODE
NSN, MFG P/N
5961010089698
NSN
5961-01-008-9698
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
DIODE
Related Searches:
3011379-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010089702
NSN
5961-01-008-9702
3011379-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010089702
NSN
5961-01-008-9702
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
74201193
DIODE
NSN, MFG P/N
5961010089703
NSN
5961-01-008-9703
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
DIODE
Related Searches:
74202078
DIODE
NSN, MFG P/N
5961010089704
NSN
5961-01-008-9704
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
DIODE
Related Searches:
5039-492
RECTIFIER BRIDGE
NSN, MFG P/N
5961010089705
NSN
5961-01-008-9705
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
RECTIFIER BRIDGE
Related Searches:
SA3281
RECTIFIER BRIDGE
NSN, MFG P/N
5961010089705
NSN
5961-01-008-9705
MFG
NCR CORP POWER SYSTEMS DIV
Description
RECTIFIER BRIDGE
Related Searches:
5042-632
RECTIFIER
NSN, MFG P/N
5961010089706
NSN
5961-01-008-9706
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
RECTIFIER
Related Searches:
T505014005AA
RECTIFIER
NSN, MFG P/N
5961010089706
NSN
5961-01-008-9706
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
RECTIFIER
Related Searches:
168-1024-007
RECTIFIER BRIDGE
NSN, MFG P/N
5961010089719
NSN
5961-01-008-9719
MFG
NCR CORP POWER SYSTEMS DIV
Description
RECTIFIER BRIDGE
Related Searches:
5049-119
RECTIFIER BRIDGE
NSN, MFG P/N
5961010089719
NSN
5961-01-008-9719
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
RECTIFIER BRIDGE
Related Searches:
168-1040-000
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010089720
NSN
5961-01-008-9720
168-1040-000
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010089720
NSN
5961-01-008-9720
MFG
NCR CORP POWER SYSTEMS DIV
Description
SPECIAL FEATURES: SILICON THREE PHASE BRIDGE RECTIFIER;0.900 IN. LG;1.120 IN. MAX DIA;PEAK INVERSE VOLTAGE PER LEG 50V AT 25 DEG;REVERSE CURRENT LEAKAGE PER LEG 10UA AT 25 DEG;3 LEAD TYPE TERMINALS;3 DIODES ENCAPSULATED
Related Searches:
5049-121
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010089720
NSN
5961-01-008-9720
5049-121
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010089720
NSN
5961-01-008-9720
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SPECIAL FEATURES: SILICON THREE PHASE BRIDGE RECTIFIER;0.900 IN. LG;1.120 IN. MAX DIA;PEAK INVERSE VOLTAGE PER LEG 50V AT 25 DEG;REVERSE CURRENT LEAKAGE PER LEG 10UA AT 25 DEG;3 LEAD TYPE TERMINALS;3 DIODES ENCAPSULATED
Related Searches:
SA6056
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010089720
NSN
5961-01-008-9720
SA6056
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010089720
NSN
5961-01-008-9720
MFG
SEMTECH CORPORATION
Description
SPECIAL FEATURES: SILICON THREE PHASE BRIDGE RECTIFIER;0.900 IN. LG;1.120 IN. MAX DIA;PEAK INVERSE VOLTAGE PER LEG 50V AT 25 DEG;REVERSE CURRENT LEAKAGE PER LEG 10UA AT 25 DEG;3 LEAD TYPE TERMINALS;3 DIODES ENCAPSULATED
Related Searches:
167-0016-000
THYRISTOR
NSN, MFG P/N
5961010089836
NSN
5961-01-008-9836
MFG
NCR CORP POWER SYSTEMS DIV
Description
THYRISTOR
Related Searches:
5049-118
THYRISTOR
NSN, MFG P/N
5961010089836
NSN
5961-01-008-9836
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
THYRISTOR
