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5961-00-997-6254
20 Products
1093-605
TRANSISTOR
NSN, MFG P/N
5961009976254
NSN
5961-00-997-6254
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
TRANSISTOR
Related Searches:
2N2570
TRANSISTOR
NSN, MFG P/N
5961009977964
NSN
5961-00-997-7964
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
TRANSISTOR
Related Searches:
013-871
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009978021
NSN
5961-00-997-8021
MFG
AMPEX DATA SYSTEMS CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N4006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009978021
NSN
5961-00-997-8021
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
653-002-9006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009978021
NSN
5961-00-997-8021
653-002-9006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009978021
NSN
5961-00-997-8021
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - TORRANCE
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
C66047-Z1306-A26
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009978021
NSN
5961-00-997-8021
C66047-Z1306-A26
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009978021
NSN
5961-00-997-8021
MFG
EPCOS AG
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
013-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009978023
NSN
5961-00-997-8023
MFG
AMPEX SYSTEMS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE3583 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.5 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N994
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009978023
NSN
5961-00-997-8023
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE3583 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.5 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
2558121-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961009978956
NSN
5961-00-997-8956
2558121-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961009978956
NSN
5961-00-997-8956
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 115.00 MILLIAMPERES NOMINAL FORWARD CURRENT, AVERAGE ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
2558121-1REVA
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961009978956
NSN
5961-00-997-8956
2558121-1REVA
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961009978956
NSN
5961-00-997-8956
MFG
NAVAL SEA SYSTEMS COMMAND
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 115.00 MILLIAMPERES NOMINAL FORWARD CURRENT, AVERAGE ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
FA2309E
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961009978956
NSN
5961-00-997-8956
FA2309E
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961009978956
NSN
5961-00-997-8956
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 115.00 MILLIAMPERES NOMINAL FORWARD CURRENT, AVERAGE ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
7060751-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009979441
NSN
5961-00-997-9441
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 225.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE AND 75.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.085 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
PG316-2A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009979441
NSN
5961-00-997-9441
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 225.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE AND 75.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.085 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
PG316-2B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009979441
NSN
5961-00-997-9441
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 225.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE AND 75.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.085 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
243671
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009979517
NSN
5961-00-997-9517
243671
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009979517
NSN
5961-00-997-9517
MFG
GOULD INSTRUMENT SYSTEMS INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: BR72A
MANUFACTURERS CODE: 12060
MATERIAL: SILICON
OVERALL HEIGHT: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
SPECIAL FEATURES: SINGLE 0.128 IN.DIA MTG HOLE;INCLOSURE FEATURE:METAL CASE
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
BR72A
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961009979517
NSN
5961-00-997-9517
MFG
DIODES INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.000 AMPERES PEAK POINT CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: BR72A
MANUFACTURERS CODE: 12060
MATERIAL: SILICON
OVERALL HEIGHT: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
SPECIAL FEATURES: SINGLE 0.128 IN.DIA MTG HOLE;INCLOSURE FEATURE:METAL CASE
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
EE400
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009979558
NSN
5961-00-997-9558
MFG
TRANSICO INC. DBA EECO SWITCH
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
EE110
TRANSISTOR
NSN, MFG P/N
5961009979560
NSN
5961-00-997-9560
MFG
TRANSICO INC. DBA EECO SWITCH
Description
TRANSISTOR
Related Searches:
2N1539
TRANSISTOR
NSN, MFG P/N
5961009979584
NSN
5961-00-997-9584
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2N917
TRANSISTOR
NSN, MFG P/N
5961009979599
NSN
5961-00-997-9599
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN CONTROL REFERENCE: 2N917
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: MODEL RBDE5
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 01295
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
