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5961-00-990-3043

20 Products

1853-0004

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009903043

NSN

5961-00-990-3043

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1853-0004

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009903043

NSN

5961-00-990-3043

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR

48C82363E03

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009901407

NSN

5961-00-990-1407

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48C82363E03

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009901407

NSN

5961-00-990-1407

MFG

STATE HEALTH SERVICES TEXAS DEPARTMENT OF USE CAGE CODE 01WR9 FOR CATALOGING.

Description

DESIGN CONTROL REFERENCE: 48C82363E03
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 01537
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

48C82363E02

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009901418

NSN

5961-00-990-1418

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48C82363E02

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009901418

NSN

5961-00-990-1418

MFG

STATE HEALTH SERVICES TEXAS DEPARTMENT OF USE CAGE CODE 01WR9 FOR CATALOGING.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

48-82363E01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009901419

NSN

5961-00-990-1419

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48-82363E01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009901419

NSN

5961-00-990-1419

MFG

STATE HEALTH SERVICES TEXAS DEPARTMENT OF USE CAGE CODE 01WR9 FOR CATALOGING.

Description

DESIGN CONTROL REFERENCE: TI-255
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 01295
OVERALL DIAMETER: 0.042 INCHES MAXIMUM
OVERALL LENGTH: 0.068 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

TI-255

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009901419

NSN

5961-00-990-1419

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TI-255

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009901419

NSN

5961-00-990-1419

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

DESIGN CONTROL REFERENCE: TI-255
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 01295
OVERALL DIAMETER: 0.042 INCHES MAXIMUM
OVERALL LENGTH: 0.068 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

48C82392B03

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009901420

NSN

5961-00-990-1420

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48C82392B03

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009901420

NSN

5961-00-990-1420

MFG

STATE HEALTH SERVICES TEXAS DEPARTMENT OF USE CAGE CODE 01WR9 FOR CATALOGING.

Description

DESIGN CONTROL REFERENCE: 48C82392B03
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 01537
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

SG3182

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009901420

NSN

5961-00-990-1420

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SG3182

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009901420

NSN

5961-00-990-1420

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

DESIGN CONTROL REFERENCE: 48C82392B03
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 01537
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

48D82256C08

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009901429

NSN

5961-00-990-1429

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48D82256C08

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009901429

NSN

5961-00-990-1429

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.6 MAXIMUM NOMINAL REGULATOR VOLTAGE

XP3640

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009901998

NSN

5961-00-990-1998

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XP3640

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009901998

NSN

5961-00-990-1998

MFG

MICROLAB/FXR

Description

ACCOMMODATED EQUIPMENT IDENTIFYING NUMBER: IN21 OR IN23
COAXIAL CONNECTOR SERIES DESIGNATION: BNC
DESIGN CONTROL REFERENCE: XP3640
INPUT CONTACT TYPE: MALE
INPUT TERMINAL TYPE: COAXIAL CABLE
MANUFACTURERS CODE: 00929
OPERATING FREQUENCY: 0.0 GIGAHERTZ MINIMUM AND 3.0 GIGAHERTZ MAXIMUM
OUTPUT COAXIAL CONNECTION SERIES DESIGNATION: BNC
OUTPUT CONTACT TYPE: FEMALE
OUTPUT TERMINAL TYPE: COAXIAL CABLE
OVERALL DIAMETER: 0.438 INCHES NOMINAL
OVERALL LENGTH: 2.810 INCHES NOMINAL
THE MANUFACTURERS DATA:

FD1029DJ

TRANSISTOR

NSN, MFG P/N

5961009902065

NSN

5961-00-990-2065

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FD1029DJ

TRANSISTOR

NSN, MFG P/N

5961009902065

NSN

5961-00-990-2065

MFG

GTE COMMUNICATION SYSTEMS CORP

Description

DESIGN CONTROL REFERENCE: FD1029DJ
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 04773
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

2N1912

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961009902263

NSN

5961-00-990-2263

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2N1912

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961009902263

NSN

5961-00-990-2263

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.030 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE3245 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD W/TERMINAL LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM BREAKOVER VOLTAGE, DC

5961009902263

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961009902263

NSN

5961-00-990-2263

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5961009902263

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961009902263

NSN

5961-00-990-2263

MFG

E.C.A ETABLISSEMENT CENTRAL DES APPROVISIONNEMENTS DES FORCES ARMEES

Description

CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.030 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE3245 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD W/TERMINAL LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM BREAKOVER VOLTAGE, DC

WX809C

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961009902263

NSN

5961-00-990-2263

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WX809C

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961009902263

NSN

5961-00-990-2263

MFG

WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV

Description

CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.030 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE3245 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD W/TERMINAL LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM BREAKOVER VOLTAGE, DC

2N2219

TRANSISTOR

NSN, MFG P/N

5961009902264

NSN

5961-00-990-2264

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2N2219

TRANSISTOR

NSN, MFG P/N

5961009902264

NSN

5961-00-990-2264

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-2N2219 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

40002264-000

TRANSISTOR

NSN, MFG P/N

5961009902264

NSN

5961-00-990-2264

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40002264-000

TRANSISTOR

NSN, MFG P/N

5961009902264

NSN

5961-00-990-2264

MFG

DNE TECHNOLOGIES INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-2N2219 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

4192795-103

TRANSISTOR

NSN, MFG P/N

5961009902264

NSN

5961-00-990-2264

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4192795-103

TRANSISTOR

NSN, MFG P/N

5961009902264

NSN

5961-00-990-2264

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-2N2219 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

531-231-034

TRANSISTOR

NSN, MFG P/N

5961009902264

NSN

5961-00-990-2264

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531-231-034

TRANSISTOR

NSN, MFG P/N

5961009902264

NSN

5961-00-990-2264

MFG

ELETTRONICA SPA

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-2N2219 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

MM488

TRANSISTOR

NSN, MFG P/N

5961009902264

NSN

5961-00-990-2264

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MM488

TRANSISTOR

NSN, MFG P/N

5961009902264

NSN

5961-00-990-2264

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-2N2219 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

2N2185

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009903043

NSN

5961-00-990-3043

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2N2185

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009903043

NSN

5961-00-990-3043

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR

4192795-94

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009903043

NSN

5961-00-990-3043

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4192795-94

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009903043

NSN

5961-00-990-3043

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR