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5961-00-846-5017

20 Products

1N2157

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008465017

NSN

5961-00-846-5017

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1N2157

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008465017

NSN

5961-00-846-5017

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

NONDEFINITIVE SPEC/STD DATA: 1N2157 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG

2N1314

TRANSISTOR

NSN, MFG P/N

5961008465452

NSN

5961-00-846-5452

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2N1314

TRANSISTOR

NSN, MFG P/N

5961008465452

NSN

5961-00-846-5452

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP

092017001

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961008465808

NSN

5961-00-846-5808

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092017001

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961008465808

NSN

5961-00-846-5808

MFG

DARE ELECTRONICS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 150.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N682
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/108
OVERALL LENGTH: 1.646 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.563 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/108 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
T

343-214-004

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961008465808

NSN

5961-00-846-5808

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343-214-004

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961008465808

NSN

5961-00-846-5808

MFG

INTERSTATE ELECTRONICS CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 150.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N682
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/108
OVERALL LENGTH: 1.646 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.563 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/108 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
T

353-1848-000

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961008465808

NSN

5961-00-846-5808

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353-1848-000

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961008465808

NSN

5961-00-846-5808

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 150.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N682
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/108
OVERALL LENGTH: 1.646 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.563 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/108 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
T

40050017-000

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961008465808

NSN

5961-00-846-5808

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40050017-000

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961008465808

NSN

5961-00-846-5808

MFG

DNE TECHNOLOGIES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 150.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N682
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/108
OVERALL LENGTH: 1.646 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.563 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/108 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
T

415/4/03633/000

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961008465808

NSN

5961-00-846-5808

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415/4/03633/000

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961008465808

NSN

5961-00-846-5808

MFG

BAE SYSTEMS INTEGRATED SYSTEM TECHNO LOGIES LTD

Description

CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 150.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N682
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/108
OVERALL LENGTH: 1.646 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.563 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/108 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
T

4192800-246

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961008465808

NSN

5961-00-846-5808

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4192800-246

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961008465808

NSN

5961-00-846-5808

MFG

CETRON ELECTRONICS DIV RICHARDSON ELECTRONICS LTD

Description

CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 150.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N682
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/108
OVERALL LENGTH: 1.646 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.563 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/108 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
T

52-714-005

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961008465808

NSN

5961-00-846-5808

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52-714-005

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961008465808

NSN

5961-00-846-5808

MFG

HARRIS CORPORATION DBA GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION DIV GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 150.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N682
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/108
OVERALL LENGTH: 1.646 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.563 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/108 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
T

7904866-00

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961008465808

NSN

5961-00-846-5808

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7904866-00

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961008465808

NSN

5961-00-846-5808

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 150.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N682
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/108
OVERALL LENGTH: 1.646 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.563 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/108 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
T

BMI3593-32

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961008465808

NSN

5961-00-846-5808

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BMI3593-32

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961008465808

NSN

5961-00-846-5808

MFG

BAUER INC.

Description

CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 150.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N682
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/108
OVERALL LENGTH: 1.646 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.563 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/108 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
T

C35U

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961008465808

NSN

5961-00-846-5808

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C35U

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961008465808

NSN

5961-00-846-5808

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 150.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N682
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/108
OVERALL LENGTH: 1.646 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.563 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/108 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
T

JAN2N682A

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961008465808

NSN

5961-00-846-5808

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JAN2N682A

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961008465808

NSN

5961-00-846-5808

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 150.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N682
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/108
OVERALL LENGTH: 1.646 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.563 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/108 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
T

VBE890-2N682

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961008465808

NSN

5961-00-846-5808

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VBE890-2N682

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961008465808

NSN

5961-00-846-5808

MFG

THALES NEDERLAND

Description

CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 150.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N682
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/108
OVERALL LENGTH: 1.646 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.563 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/108 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
T

353-2893-000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008466464

NSN

5961-00-846-6464

View More Info

353-2893-000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008466464

NSN

5961-00-846-6464

MFG

ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.380 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.5 MAXIMUM NOMINAL REGULATOR VOLTAGE

720670-77REVA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008466464

NSN

5961-00-846-6464

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720670-77REVA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008466464

NSN

5961-00-846-6464

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.380 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.5 MAXIMUM NOMINAL REGULATOR VOLTAGE

PS6467

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008466464

NSN

5961-00-846-6464

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PS6467

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008466464

NSN

5961-00-846-6464

MFG

TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.380 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.5 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N1614

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008466974

NSN

5961-00-846-6974

View More Info

1N1614

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008466974

NSN

5961-00-846-6974

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2246 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

13-121856-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008466975

NSN

5961-00-846-6975

View More Info

13-121856-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008466975

NSN

5961-00-846-6975

MFG

GENERAL DYNAMICS C4 SYSTEMS INC.

Description

SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG

5800332-9743-005

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008466975

NSN

5961-00-846-6975

View More Info

5800332-9743-005

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008466975

NSN

5961-00-846-6975

MFG

EADS DEUTSCHLAND GMBH DEFENCE ELECTR ONICS ABTEILUNG VELB6

Description

SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG