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5961-00-827-4783
20 Products
D5880
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008274783
NSN
5961-00-827-4783
MFG
SKYWORKS SOLUTIONS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.166 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 FERRULE AND 1 PIN
Related Searches:
K408BR868
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008274783
NSN
5961-00-827-4783
MFG
KEMTRON ELECTRON PRODUCTS INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.166 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 FERRULE AND 1 PIN
Related Searches:
MA40507
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008274783
NSN
5961-00-827-4783
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.166 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 FERRULE AND 1 PIN
Related Searches:
R358022-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008274783
NSN
5961-00-827-4783
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.166 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 FERRULE AND 1 PIN
Related Searches:
005915203
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008274826
NSN
5961-00-827-4826
MFG
L3 COMMUNICATIONS ELAC NAUTIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.375 INCHES MAXIMUM
OVERALL LENGTH: 0.313 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4222 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N1711
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008274826
NSN
5961-00-827-4826
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.375 INCHES MAXIMUM
OVERALL LENGTH: 0.313 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4222 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
RP539-56-1N1711
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008274826
NSN
5961-00-827-4826
RP539-56-1N1711
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008274826
NSN
5961-00-827-4826
MFG
SVENSKA PHILIPS AB
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.375 INCHES MAXIMUM
OVERALL LENGTH: 0.313 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4222 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1205024P1
TRANSISTOR
NSN, MFG P/N
5961008274844
NSN
5961-00-827-4844
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 340.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 340.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
TRS2804S
TRANSISTOR
NSN, MFG P/N
5961008274844
NSN
5961-00-827-4844
MFG
INDUSTRO TRANSISTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 340.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 340.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
2N1615
TRANSISTOR
NSN, MFG P/N
5961008274893
NSN
5961-00-827-4893
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 5.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE3419 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 1
Related Searches:
ST4027
TRANSISTOR
NSN, MFG P/N
5961008274893
NSN
5961-00-827-4893
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 5.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE3419 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 1
Related Searches:
141-100-0004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008274908
NSN
5961-00-827-4908
141-100-0004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008274908
NSN
5961-00-827-4908
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.480 INCHES MINIMUM AND 0.520 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 14.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N4058A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008274908
NSN
5961-00-827-4908
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.480 INCHES MINIMUM AND 0.520 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 14.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
MR2360
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008274987
NSN
5961-00-827-4987
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.126 INCHES MAXIMUM
OVERALL LENGTH: 0.267 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1000.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.64 MINIMUM FORWARD VOLTAGE, DC AND 0.7 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
SMB597517
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008274987
NSN
5961-00-827-4987
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.126 INCHES MAXIMUM
OVERALL LENGTH: 0.267 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1000.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.64 MINIMUM FORWARD VOLTAGE, DC AND 0.7 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
1N4999
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008274993
NSN
5961-00-827-4993
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
3172663-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008274993
NSN
5961-00-827-4993
MFG
ALLIED-SIGNAL INC DBA ALLIED-SIGNAL AEROSPACE CO ELECTRODYNAMICS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
10658214
TRANSISTOR
NSN, MFG P/N
5961008274997
NSN
5961-00-827-4997
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2N3791
TRANSISTOR
NSN, MFG P/N
5961008274997
NSN
5961-00-827-4997
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
3172662
TRANSISTOR
NSN, MFG P/N
5961008274997
NSN
5961-00-827-4997
MFG
ALLIED-SIGNAL INC DBA ALLIED-SIGNAL AEROSPACE CO ELECTRODYNAMICS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
