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5961-00-584-4575
20 Products
FN3463
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005844575
NSN
5961-00-584-4575
FN3463
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005844575
NSN
5961-00-584-4575
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND 50.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
OVERALL WIDTH: 0.500 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 14 PIN
TEST DATA DOCUMENT: 82577-928162 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
L02026
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005844527
NSN
5961-00-584-4527
MFG
DLA LAND AND MARITIME
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4148-1
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/116
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 75.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
M463023
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005844527
NSN
5961-00-584-4527
MFG
QUALIMETRICS INC
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4148-1
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/116
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 75.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
PG446
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005844527
NSN
5961-00-584-4527
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4148-1
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/116
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 75.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
R01D037Z03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005844527
NSN
5961-00-584-4527
R01D037Z03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005844527
NSN
5961-00-584-4527
MFG
HUGHES CORPORATION DBA WESCHLER INSTRUMENTS DIV WESCHLER ELECTRIC
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4148-1
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/116
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 75.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
SEM-0076-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005844527
NSN
5961-00-584-4527
SEM-0076-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005844527
NSN
5961-00-584-4527
MFG
XYZ MARINE INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4148-1
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/116
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 75.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
TCRSU0125
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005844527
NSN
5961-00-584-4527
MFG
COMTEC INFORMATION SYSTEMS INC DIGITRONICS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4148-1
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/116
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 75.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
1-5K13A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005844537
NSN
5961-00-584-4537
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 82.00 AMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0.13
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6049 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.1 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
1N5636A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005844537
NSN
5961-00-584-4537
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 82.00 AMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0.13
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6049 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.1 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
1N5636AA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005844537
NSN
5961-00-584-4537
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 82.00 AMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0.13
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6049 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.1 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
803042-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005844537
NSN
5961-00-584-4537
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 82.00 AMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0.13
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6049 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.1 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
1N5640A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005844538
NSN
5961-00-584-4538
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 54.00 AMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6049 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 17.1 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
1N5640AA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005844538
NSN
5961-00-584-4538
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 54.00 AMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6049 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 17.1 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
P3H012275-17
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005844538
NSN
5961-00-584-4538
P3H012275-17
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005844538
NSN
5961-00-584-4538
MFG
RADIO FREQUENCY SYSTEMS FRANCE
Description
CURRENT RATING PER CHARACTERISTIC: 54.00 AMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6049 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 17.1 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
5800583-942300-2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005844562
NSN
5961-00-584-4562
5800583-942300-2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005844562
NSN
5961-00-584-4562
MFG
EADS DEUTSCHLAND GMBH DEFENCE ELECTR ONICS ABTEILUNG VELB6
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC 1ST TRANSISTOR 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC 2ND TRANSISTOR -500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC 3RD TRANSISTOR -500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC 4TH
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.325 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.6 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 14 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN 1ST TRANSISTOR 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER
~1: OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN 2ND TRANSISTOR -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -30.0 MAXIMUM COLLECTOR TO EMITTER
~1: TRANSISTOR
~2: VOLTAGE/STATIC/BASE OPEN AND -5.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN 3RD TRANSISTOR -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.5 MAXIMUM EMITTER
~3: TO BASE VOLTAGE, STATIC, COLLECTOR OPEN 4TH TRANSISTOR
Related Searches:
7904255-00
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005844562
NSN
5961-00-584-4562
7904255-00
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005844562
NSN
5961-00-584-4562
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC 1ST TRANSISTOR 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC 2ND TRANSISTOR -500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC 3RD TRANSISTOR -500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC 4TH
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.325 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.6 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 14 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN 1ST TRANSISTOR 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER
~1: OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN 2ND TRANSISTOR -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -30.0 MAXIMUM COLLECTOR TO EMITTER
~1: TRANSISTOR
~2: VOLTAGE/STATIC/BASE OPEN AND -5.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN 3RD TRANSISTOR -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.5 MAXIMUM EMITTER
~3: TO BASE VOLTAGE, STATIC, COLLECTOR OPEN 4TH TRANSISTOR
Related Searches:
MHQ6002
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005844562
NSN
5961-00-584-4562
MHQ6002
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961005844562
NSN
5961-00-584-4562
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC 1ST TRANSISTOR 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC 2ND TRANSISTOR -500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC 3RD TRANSISTOR -500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC 4TH
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.325 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.6 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 14 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN 1ST TRANSISTOR 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER
~1: OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN 2ND TRANSISTOR -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -30.0 MAXIMUM COLLECTOR TO EMITTER
~1: TRANSISTOR
~2: VOLTAGE/STATIC/BASE OPEN AND -5.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN 3RD TRANSISTOR -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.5 MAXIMUM EMITTER
~3: TO BASE VOLTAGE, STATIC, COLLECTOR OPEN 4TH TRANSISTOR
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G181-575-002
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KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.175 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.175 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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928162-502B
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RAYTHEON COMPANY
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND 50.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
OVERALL WIDTH: 0.500 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 14 PIN
TEST DATA DOCUMENT: 82577-928162 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
