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5961-00-436-0965
20 Products
36RC15A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004360965
NSN
5961-00-436-0965
36RC15A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004360965
NSN
5961-00-436-0965
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 850.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 2.500 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.063 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
541513-301
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004360965
NSN
5961-00-436-0965
541513-301
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004360965
NSN
5961-00-436-0965
MFG
MARATHONNORCO AEROSPACE INC . DBA CHRISTIE ELECTRIC
Description
CURRENT RATING PER CHARACTERISTIC: 850.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 2.500 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.063 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
580R147H09
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961004360985
NSN
5961-00-436-0985
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.218 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.750 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
D5899MR
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961004360985
NSN
5961-00-436-0985
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.218 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.750 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
M02713MR
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961004360985
NSN
5961-00-436-0985
MFG
SKYWORKS SOLUTIONS INC.
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.218 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.750 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
148994
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004361001
NSN
5961-00-436-1001
148994
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004361001
NSN
5961-00-436-1001
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRMMAN NORDEN SYSTEMS DIV NAVAL AND MARINE SYSTEMS DIVISION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-71
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO
Related Searches:
2N3956
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004361001
NSN
5961-00-436-1001
2N3956
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004361001
NSN
5961-00-436-1001
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-71
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO
Related Searches:
JAN2N3956
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004361001
NSN
5961-00-436-1001
JAN2N3956
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004361001
NSN
5961-00-436-1001
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-71
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO
Related Searches:
033530
TRANSISTOR
NSN, MFG P/N
5961004361002
NSN
5961-00-436-1002
MFG
ULTRA ELECTRONICS LTD COMMAND & CONT ROL SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5747 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
106-0008-000
TRANSISTOR
NSN, MFG P/N
5961004361002
NSN
5961-00-436-1002
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-OLATHE
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5747 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2N5447
TRANSISTOR
NSN, MFG P/N
5961004361002
NSN
5961-00-436-1002
MFG
SEMITRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5747 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2N5447A
TRANSISTOR
NSN, MFG P/N
5961004361002
NSN
5961-00-436-1002
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5747 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
A4334
TRANSISTOR
NSN, MFG P/N
5961004361002
NSN
5961-00-436-1002
MFG
AERONAUTICAL COMMUNICATIONS EQUIPMENT INC
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5747 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
RELEASE5747
TRANSISTOR
NSN, MFG P/N
5961004361002
NSN
5961-00-436-1002
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5747 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
653-523-9108
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004361024
NSN
5961-00-436-1024
653-523-9108
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004361024
NSN
5961-00-436-1024
MFG
HONEYWELL INTERNATIONAL INC. DBA HONEYWELL DIV AEROSPACE - PHOENIX
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 1.200 INCHES NOMINAL
OVERALL LENGTH: 0.635 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS AND 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
MR1207FL
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004361024
NSN
5961-00-436-1024
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 1.200 INCHES NOMINAL
OVERALL LENGTH: 0.635 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS AND 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N3640
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004361065
NSN
5961-00-436-1065
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3684 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
161033101
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004361083
NSN
5961-00-436-1083
161033101
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004361083
NSN
5961-00-436-1083
MFG
GRANGER TELECOM
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
OVERALL HEIGHT: 0.110 INCHES NOMINAL
OVERALL LENGTH: 0.625 INCHES NOMINAL
OVERALL WIDTH: 0.625 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
3192063
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004361083
NSN
5961-00-436-1083
3192063
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004361083
NSN
5961-00-436-1083
MFG
NAVAL SEA SYSTEMS COMMAND
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
OVERALL HEIGHT: 0.110 INCHES NOMINAL
OVERALL LENGTH: 0.625 INCHES NOMINAL
OVERALL WIDTH: 0.625 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
40503108
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004361083
NSN
5961-00-436-1083
40503108
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004361083
NSN
5961-00-436-1083
MFG
GTE PRODUCTS CORP LIGHTING PRODUCTS GROUP
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
OVERALL HEIGHT: 0.110 INCHES NOMINAL
OVERALL LENGTH: 0.625 INCHES NOMINAL
OVERALL WIDTH: 0.625 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
