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5961-00-313-7313

20 Products

OM28V169

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003137313

NSN

5961-00-313-7313

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OM28V169

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003137313

NSN

5961-00-313-7313

MFG

MILSPEC MANUFACTURING PTY LTD

Description

CURRENT RATING PER CHARACTERISTIC: 85.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE AND 1500.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL AND GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 180.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 500.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 500.0 MINIMUM BREAKDOWN VOLTAGE, DC

1N5360BA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003124367

NSN

5961-00-312-4367

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1N5360BA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003124367

NSN

5961-00-312-4367

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 5750 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

400923

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003124367

NSN

5961-00-312-4367

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400923

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003124367

NSN

5961-00-312-4367

MFG

AMERICAN TELEPHONE AND TELEGRAPH CO

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 5750 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

720641-3

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961003124460

NSN

5961-00-312-4460

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720641-3

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961003124460

NSN

5961-00-312-4460

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 0.880 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE

DMS 85091B

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961003124460

NSN

5961-00-312-4460

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DMS 85091B

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961003124460

NSN

5961-00-312-4460

MFG

DLA LAND AND MARITIME

Description

COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 0.880 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE

S258

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961003124460

NSN

5961-00-312-4460

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S258

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961003124460

NSN

5961-00-312-4460

MFG

MICRO USPD INC

Description

COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 0.880 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE

723078-2

TRANSISTOR

NSN, MFG P/N

5961003124461

NSN

5961-00-312-4461

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723078-2

TRANSISTOR

NSN, MFG P/N

5961003124461

NSN

5961-00-312-4461

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.00 AMPERES MAXIMUM FORWARD CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 2.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 15.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

SP5621

TRANSISTOR

NSN, MFG P/N

5961003124461

NSN

5961-00-312-4461

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SP5621

TRANSISTOR

NSN, MFG P/N

5961003124461

NSN

5961-00-312-4461

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.00 AMPERES MAXIMUM FORWARD CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 2.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 15.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

GA1824

TRANSISTOR

NSN, MFG P/N

5961003126759

NSN

5961-00-312-6759

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GA1824

TRANSISTOR

NSN, MFG P/N

5961003126759

NSN

5961-00-312-6759

MFG

TELEDYNE INSTRUMENTS INC. DIV TELEDYNE HASTINGS INSTRUMENTS

L8914

VARACTOR

NSN, MFG P/N

5961003130104

NSN

5961-00-313-0104

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L8914

VARACTOR

NSN, MFG P/N

5961003130104

NSN

5961-00-313-0104

MFG

FORD AEROSPACE CORP ELECTRONICS DIV

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: SILICON PLANAR EPITAXAL DIODE. 250PICOFARAD. 100 V MAX. REVERSE CURRENT AT 8 MICROAMPERS.MINIMUM Q OF 160 AT MINUS 8 V. Q MEASURED AT 25 MEGAHERTZ.WORKING VOLTAGE MINUS 100 AT 25 DEG. C. REVERSE VOLTAGEMINUS 115 V AT 25 DEG. C. MAX OPERATING TEMPERATURE
~1: 85DEG. C. TEMPERATURE COEFFICIENT AT MINUS 8 DEG. 0.03 PERCENTDEG C MAX. CAPACITY VALUES AT MINUS 8 V. 1 MEGAHERTZTRACKING ERROR OF 1 PERCENT DIM 0.350 IN. X 0.350 IN. X0.150 IN. BEVEL ON LOWER EDGE. TWO WIRE LEADS LOCATED 1 ONEACH END. WIRE LEADS 0.030
~2: IN.DIA. 1.44 IN LONG

ST-2538

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961003130401

NSN

5961-00-313-0401

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ST-2538

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961003130401

NSN

5961-00-313-0401

MFG

SEMICONDUCTOR TECHNOLOGY INC DBA S T I

Description

DESIGN CONTROL REFERENCE: ST-2538
MANUFACTURERS CODE: 50891
OVERALL DIAMETER: 0.305 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
OVERALL HEIGHT: 0.150 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SPECIAL FEATURES: NPN/PNP COMPLIMENTARY PAIRS; 200 DEG C JUNCTION TEMP; 600/350 MW; 30 VDC COLLECTOR TO EMITTER VOLTAGE; COMMON EMITTER; LARGE-SIGNAL SHORT CIRCUIT; FORWARD CURRENT; 70 TRANSFER RATIO AT 150 MA COLLECTOR CURRENT; 0.4 VDC COLLECTOR TO EMITTER SATURATION
TERMINAL LENGTH: 1.500 INCHES NOMINAL
THE MANUFACTURERS DATA:
~1: VOLTAGE AT 150 MA; RMS/15 MA DC COLLECTOR CUTOFF CURRENT; 100 NANOAMPS EMITTER OPEN; UNITY 200 MHZ MIN FREQ AT WHICH COMMON EMITTER CURRENT GAIN; 0.335 TO 0.370 BASE DIA; 6 WIRE LEAD TERMINALS 0.016 TO 0.019 IN. DIA

720454

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003137236

NSN

5961-00-313-7236

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720454

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003137236

NSN

5961-00-313-7236

MFG

SYSTRON-DONNER CORP MICROWAVE/INSTRUMENT DIV

1N4164A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003137269

NSN

5961-00-313-7269

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1N4164A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003137269

NSN

5961-00-313-7269

MFG

SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV

1N4190A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003137273

NSN

5961-00-313-7273

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1N4190A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003137273

NSN

5961-00-313-7273

MFG

SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV

1N4193A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003137274

NSN

5961-00-313-7274

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1N4193A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003137274

NSN

5961-00-313-7274

MFG

SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV

6076

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003137313

NSN

5961-00-313-7313

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6076

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003137313

NSN

5961-00-313-7313

MFG

NTE ELECTRONICS INC SUB OF SOLID STATE INC

Description

CURRENT RATING PER CHARACTERISTIC: 85.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE AND 1500.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL AND GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 180.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 500.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 500.0 MINIMUM BREAKDOWN VOLTAGE, DC

70H30A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003137313

NSN

5961-00-313-7313

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70H30A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003137313

NSN

5961-00-313-7313

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 85.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE AND 1500.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL AND GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 180.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 500.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 500.0 MINIMUM BREAKDOWN VOLTAGE, DC

85HF40

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003137313

NSN

5961-00-313-7313

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85HF40

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003137313

NSN

5961-00-313-7313

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CURRENT RATING PER CHARACTERISTIC: 85.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE AND 1500.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL AND GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 180.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 500.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 500.0 MINIMUM BREAKDOWN VOLTAGE, DC

85HF40T

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003137313

NSN

5961-00-313-7313

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85HF40T

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003137313

NSN

5961-00-313-7313

MFG

THALES AVIONICS ELECTRICAL SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 85.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE AND 1500.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL AND GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 180.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 500.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 500.0 MINIMUM BREAKDOWN VOLTAGE, DC

F120N0018

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003137313

NSN

5961-00-313-7313

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F120N0018

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003137313

NSN

5961-00-313-7313

MFG

BRONZAVIA AIR EQUIPEMENT DIV EQUIPEM ENTS EMBARQUES

Description

CURRENT RATING PER CHARACTERISTIC: 85.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE AND 1500.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL AND GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 180.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 500.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 500.0 MINIMUM BREAKDOWN VOLTAGE, DC